elektronische bauelemente SSE9575 -15 a, -60 v, r ds(on) 90 m p-channel enhancement mode power mos.fet 01-june-2003 rev. a page 1 of 4 description the SSE9575 provide the designer with the best combinati on of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. th e through-hole version (to-220) is available for low-profile applications and suited for low voltage applications such as dc/dc converters. features z simple drive requirement z lower on-resistance z fast switching characteristic package dimensions millimeter millimeter ref. min. max. ref. min. max. a 4.40 4. 80 c1 1.25 1.45 b 0.76 1.00 b1 1.17 1.47 c 0.36 0.50 l 13.25 14.25 d 8.60 9.00 e 2.54 ref. e 9.80 10.4 l1 2.60 2.89 l4 14.7 15.3 ? 3.71 3.96 l5 6.20 6.60 a1 2.60 2.80 absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 25 v drain current 3 ,vgs@ 10v i d @ta=25 -15 a drain current 3 ,vgs@ 10v i d @ta=100 -9.5 a pulsed drain current 1, i dm -45 a power dissipation p d @ta=25 36 w operating junction and st orage temperature range tj, tstg -55 ~ +150 linear derating factor 0.29 w/ thermal data parameter symbol value unit thermal resistance junction-case max. r j-case 3.5 / w thermal resistance junction-ambient max. r j-amb 125 / w
elektronische bauelemente SSE9575 -15 a, -60 v, r ds(on) 90 m p-channel enhancement mode power mos.fet 01-june-2003 rev. a page 2 of 4 electrical characteristics (tj = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss -60 - - v v gs =0, i d =250ua breakdown voltage temp. coefficient bv dss / tj - -0.04 - v/ reference to 25 , i d =-1ma gate threshold voltage v gs(th) -1.0 - -3.0 v v ds =v gs , i d =250ua forward transconductance g fs - 7 - s v ds =-15v, i d =-3.5a gate-source leakage current i gss - - 100 na v gs = 25v drain-source leakage current(tj=25 ) - - -1 ua v ds =-60v, v gs =0 drain-source leakage current(tj=150 ) i dss - - -25 ua v ds =-48v, v gs =0 - - 90 v gs =-10v, i d =-12a static drain-source on-resistance 2 r ds(on) - - 120 m ? v gs =-4.5v, i d =-9a total gate charge 2 q g - 17 27 gate-source charge q gs - 5 - gate-drain (?miller?) change q gd - 6 - nc i d =-9a v ds =-48v v gs =-4.5v turn-on delay time 2 t d(on) - 10 - rise time t r - 19 - turn-off delay time t d(off) - 46 - fall time t f - 53 - ns v ds =-30v i d =-9a v gs =-10v r g =3.3 ? r d =3.3 ? input capacitance c iss - 1660 2660 output capacitance c oss - 160 - reverse transfer capacitance c rss - 100 - pf v gs =0v v ds =-25v f=1.0mhz source-drain diode parameter symbol min. typ. max. unit test conditions forward on voltage 2 v sd - - -1.2 v i s =1.7a, v gs =0, tj=25 reverse recovery time 2 t rr - 56 - ns reverse recovery charge i s - 159 - nc i s = -9a, v gs = 0v, dl/dt = 100a/us notes: 1. pulse width limited by safe operating area. 2. pulse width 300us, duty cycle 2%. QQ
elektronische bauelemente SSE9575 -15 a, -60 v, r ds(on) 90 m p-channel enhancement mode power mos.fet 01-june-2003 rev. a page 3 of 4 characteristic curve
elektronische bauelemente SSE9575 -15 a, -60 v, r ds(on) 90 m p-channel enhancement mode power mos.fet 01-june-2003 rev. a page 4 of 4 f=1.0mhz
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