1999. 11. 16 1/2 semiconductor technical data KTB1423 epitaxial planar pnp transistor revision no : 1 switching applications. hammer driver, pulse motor driver applications. features high dc current gain : h fe =1000(min.) at v ce =-3v, i c =-3a. high collector breakdown voltage : v ceo =-120v (min.) complementary to ktd1413. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v eb0 -5 v collector current dc i c -5 a pules i cp -8 base current i b -0.12 a collector power dissipation (tc=25 1 ) p c 30 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-100v, i e =0 - - -1 ma emitter cut-off current i ebo v be =-5v, i c =0 - - -2 ma collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -120 - - v dc current gain h fe (1) v ce =-3v, i c =-0.5a 1000 - - h fe (2) v ce =-3v, i c =-3a 1000 - - collector-emitter saturation voltage v ce(sat) 1 i c =-3a, i b =-12ma - - -2 v v ce(sat) 2 i c =-5a, i b =-20ma - - -4 base-emitter voltage v be v ce =-3v, i c =-3a - - -2.5 v output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 300 pf c b e r 8k ? 120 ? r 1 2 = = equivalent circuit
1999. 11. 16 2/2 KTB1423 revision no : 1 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta saturation voltage ce(sat) -0.5 -3 -1 -0.3 -0.1 collector current i (a) c v , v - i h - i c collector current i (a) -0.1 -0.3 -1 -3 100 fe dc current gain h 10 capacitance c , c ob(pf) -100 -10 -1 -0.1 collector-base voltage v (v) cb c , c - v , v safe operating area ce collector-emitter voltage v (v) -1 -3 -10 - 300 -0.01 c collector current i (a) r - t w pulse width t (s) 10 0.1 th(t) transient thermal resistance fe c -10 300 500 1k 3k 5k 10k v =-3v ce ce(sat) be(sat), c v , v (v) be(sat) -10 -20 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 i /i =250 c b v be(sat) ce(sat) v ob ib cb eb ib(pf) eb emitter-base voltage v (v) -30 -3 -0.3 30 50 100 300 500 1k f=1mhz c ib ob c -30 -100 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 -20 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c * c i max. (continuous) dc operation tc=25 c 100 s 1ms 10ms * * * v max. ceo th(t) w r ( c/w) ta=25 c no heat sink tc=25 c infinite heat sink 1 2 -3 -2 10 -1 10 0 10 1 10 2 10 0.3 1 3 10 30 100 1 2 p (w) 25 50 75 100 125 150 175 5 10 15 20 25 30 35 tc=ta infinite heat sink no heat sink 1 2 1 2
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