npn silicon planar medium power transistor issue 2 ? march 1994 features * 30 volt v ceo * 1 amp continuous current *p tot = 1 watt absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb = 25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 50 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 30 v ic=10ma, i b =0 emitter-base breakdown voltage v (br)ebo 5v i e =100 m a, i c =0 collector cut-off current i cbo 0.1 10 m a m a v cb =40v v cb =40v, t amb =100c emitter cut-off current i ebo 0.1 m a v eb =4v, i c =0 collector-emitter saturation voltage v ce(sat) 0.5 1 v v i c =1a, i b =100ma* i c =2a, i b =200ma* base-emitter saturation voltage v be(sat) 1.25 v i c =1a, i b =100ma* base-emitter turn-on voltage v be(on) 1vic=1a,v ce =2v* static forward current transfer ratio h fe 70 100 80 40 300 i c =50ma, v ce =2v* i c =500ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 15 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible ZTX449 3-173 c b e d.c. 1s 100ms 10ms 1.0ms 300s 100s typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e v be ( sa t ) - (v olts) v be (o n ) - ( v o l t s ) i c - co l le c to r cur r e nt ( am ps) v ce - collector voltage (volts) safe operating area 1 10 100 0.01 0.1 1 10 single pulse test at t amb =25c 40 80 120 160 200 0 10 0.2 0.4 0.6 0.8 switching speeds i c - collector current (amps) switching t i m e 0.001 0.01 0.1 1 i c /i b =10 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr ts ns tf,tr,td ns 100 50 150 0 v ce =2v 0 i c /i b =10 0.2 0.4 0.8 1.0 1.2 1.4 1.6 1.8 0.6 v ce =2v ts tf td tr 800 400 200 600 0 0.001 1 0.01 0.1 10 0.2 0.4 0.8 1.0 1.2 1.4 1.6 1.8 0.6 0.001 1 0.01 0.1 10 0.001 1 0.01 0.1 10 0.1 v ce =10v ZTX449 3-174
npn silicon planar medium power transistor issue 2 ? march 1994 features * 30 volt v ceo * 1 amp continuous current *p tot = 1 watt absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb = 25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 50 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 30 v ic=10ma, i b =0 emitter-base breakdown voltage v (br)ebo 5v i e =100 m a, i c =0 collector cut-off current i cbo 0.1 10 m a m a v cb =40v v cb =40v, t amb =100c emitter cut-off current i ebo 0.1 m a v eb =4v, i c =0 collector-emitter saturation voltage v ce(sat) 0.5 1 v v i c =1a, i b =100ma* i c =2a, i b =200ma* base-emitter saturation voltage v be(sat) 1.25 v i c =1a, i b =100ma* base-emitter turn-on voltage v be(on) 1vic=1a,v ce =2v* static forward current transfer ratio h fe 70 100 80 40 300 i c =50ma, v ce =2v* i c =500ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 15 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible ZTX449 3-173 c b e d.c. 1s 100ms 10ms 1.0ms 300s 100s typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e v be ( sa t ) - (v olts) v be (o n ) - ( v o l t s ) i c - co l le c to r cur r e nt ( am ps) v ce - collector voltage (volts) safe operating area 1 10 100 0.01 0.1 1 10 single pulse test at t amb =25c 40 80 120 160 200 0 10 0.2 0.4 0.6 0.8 switching speeds i c - collector current (amps) switching t i m e 0.001 0.01 0.1 1 i c /i b =10 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr ts ns tf,tr,td ns 100 50 150 0 v ce =2v 0 i c /i b =10 0.2 0.4 0.8 1.0 1.2 1.4 1.6 1.8 0.6 v ce =2v ts tf td tr 800 400 200 600 0 0.001 1 0.01 0.1 10 0.2 0.4 0.8 1.0 1.2 1.4 1.6 1.8 0.6 0.001 1 0.01 0.1 10 0.001 1 0.01 0.1 10 0.1 v ce =10v ZTX449 3-174
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