1998. 6. 15 1/2 semiconductor technical data BCW68 epitaxial planar pnp transistor revision no : 1 high current application. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ * : package mounted on 99.9% alumina 10 ' 8 ' 0.6mm. type name h rank fe marking lot no. characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v collector current i c -800 ma emitter current i e 800 ma collector power dissipation p c * 350 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 type mark BCW68f df BCW68g dg mark spec
1998. 6. 15 2/2 BCW68 revision no : 1 electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -45 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 -5.0 - - v collector cut-off current i ces v eb =0v, v ce =-45v - - -20 na ta=150 1 , v eb =0v, v ce =-45v - - -20 a emitter cut-off current i ebo i c =0, v eb =-4v - - -20 na dc current gain group f h fe v ce =-1v, i c =-10ma 75 - - group g 120 - - group f v ce =-1v, i c =-100ma 100 - 250 group g 160 - 400 group f v ce =-1v, i c =-500ma 35 - - group g 60 - base-emitter saturation voltage v be(sat) i c =-100ma, i b =-10ma - - -1.25 v i c =-500ma, i b =-50ma - - -2.0 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - - -0.3 v i c =-500ma, i b =-50ma - - -0.7 transition frequency f t i c =-80ma, v ce =-10v, f=100mhz 100 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 18 pf collector input capacitance c ib v eb =-0.5v, f=1mhz - - 80 pf noise figure nf i c =-0.2ma, v ce =-5v, rg=1k u , f=1khz - 2.0 10 db
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