vishay siliconix SI1499DH new product document number: 73338 s-61963-rev. c, 09-oct-06 www.vishay.com 1 p-channel 1.2-v (g-s) mosfet features ? trenchfet ? power mosfet ? ultra-low on-resistance ? rohs compliant applications ? load switch for portable devices - guaranteed operation at v gs = 1.2 v critical for optimized design and longer battery life product summary v ds (v) r ds(on) ( ) i d (a) c q g (typ) - 8 0.078 at v gs = - 4.5 v - 1.6 10.5 nc 0.095 at v gs = - 2.5 v - 1.6 0.115 at v gs = - 1.8 v - 1.6 0.153 at v gs = - 1.5 v - 1.6 0.424 at v gs = - 1.2 v - 1.6 b ordering information: SI1499DH-t1-e3 (lead (pb)-free) sot-363 sc-70 (6-leads) 6 4 1 2 3 5 to p v i ew d d g d d s marking code bi xx lot traceability and date code part # code yy s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. b. t = 5 sec. c. package limited. d. maximum under steady state conditions is 125 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 8 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) a, b t c = 25 c i d -1.6 c a t c = 70 c - 1.6 c t a = 25 c - 1.6 a, b, c t a = 70 c - 1.6 a, b, c pulsed drain current (10 s pulse width) i dm - 6.5 c continuous source-drain diode current a, b t c = 25 c i s - 1.6 c t a = 25 c - 1.3 a, b maximum power dissipation a, b t c = 25 c p d 2.78 w t c = 70 c 1.78 t a = 25 c 2.5 a, b t a = 70 c 1 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, d t 5 sec r thja 60 80 c/w maximum junction-to-foot (drain) steady state r thjf 34 45 rohs compliant
www.vishay.com 2 document number: 73338 s-61963-rev. c, 09-oct-06 vishay siliconix SI1499DH notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 8 v v ds temperature coefficient v ds /t j i d = - 250 a - 9 mv/c v gs(th) temperature coefficient v gs(th) /t j - 2.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.35 - 0.8 v v ds = v gs , i d = - 5 ma - 0.55 gate-source leakage i gss v ds = 0 v, v gs = - 5 v - 100 ns zero gate voltage drain current i dss v ds = - 8 v, v gs = 0 v - 1 a v ds = - 8 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 4.5 v - 6.5 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 2.0 a 0.0622 0.078 v gs = - 2.5 v, i d = - 1.9 a 0.078 0.095 v gs = - 1.8 v, i d = - 0.8 a 0.094 0.115 v gs = - 1.5 v, i d = - 0.5 a 0.118 0.153 v gs = - 1.5 v, i d = - 0.100 a 0.424 forward transconductance a g fs v ds = - 4 v, i d = - 2.0 a 8s dynamic b input capacitance c iss v ds = - 4 v, v gs = 0 v, f = 1 mhz 650 pf output capacitance c oss 220 reverse transfer capacitance c rss 122 total gate charge q g v ds = - 4 v, v gs = - 4.5 v, i d = - 1.6 a 10.5 16 nc gate-source charge q gs 1.3 gate-drain charge q gd 1.9 gate resistance r g f = 1 mhz 9.5 tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 2 i d ? - 2 a, v gen = - 4.5 v, r g = 1 914 ns rise time t r 40 60 turn-off delay time t d(off) 50 75 fall time t f 60 90 tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 2 i d ? - 2 a, v gen = - 8 v, r g = 1 815 rise time t r 40 60 turn-off delay time t d(off) 46 70 fall time t f 60 90 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.6 a pulse diode forward current i sm - 6.5 body diode voltage v sd i s = - 2.4 a, v gs = 0 v - 0.7 - 1.2 v body diode reverse recovery time t rr i f = - 2.0 a, di/dt = 100 a/s, t j = 25 c 25 38 ns body diode reverse recovery charge q rr 711nc reverse recovery fall time t a 9 ns reverse recovery rise time t b 16
document number: 73338 s-61963-rev. c, 09-oct-06 www.vishay.com 3 vishay siliconix SI1499DH typical characteristics 25 c, unless noted output characteristics on-resistance vs. drain current and gate voltage gate charge drain-to-source voltage (v) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 v gs = 5 thru 2 v 1.5 v v ds - - drain current (a) i d 1 v 0.00 0.05 0.10 0.15 0.20 0.25 0246810 v gs = 2.5 v i d - drain current (a) v gs = 4.5 v r ds(on) - on-resistance (m ) v gs = 1.8 v v gs = 1.5 v 0 1 2 3 4 5 024681012 i d = 2 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 4 v v ds = 5.6 v transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 25 c t c = - 55 c 125 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 200 400 600 800 1000 012345678 c rss c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 i d = 2 a t j - junction temperature (c) r ds(on) - on-resistance (normalized) v gs = 4.5 v v gs = 2.5 v
www.vishay.com 4 document number: 73338 s-61963-rev. c, 09-oct-06 vishay siliconix SI1499DH typical characteristics 25 c, unless noted source-drain diode forward voltage threshold voltage 1.0 1.4 0.1 1 10 0.0 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 1.2 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - temperature (c) v gs(th) (v) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.0 0.1 0.2 0.3 0.4 0.5 012345 i d = 2 a v gs - gate-to-source voltage (v) r ds(on) - drain-to-source on-resistance ( ) t j = 25 c t j = 125 c 0 8 12 2 6 power (w) time (sec) 10 1 1000 0.1 0.01 10 100 4 t a = 25 c safe operating area, junction-to-ambient 100 1 0.1 1 10 0.01 10 - drain current (a) i d 0.1 1 ms t a = 25 c single pulse 10 ms 100 ms dc, 100 s *limited by r ds(on) v ds - drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 1 s 10 s 10 s, 100 s >
document number: 73338 s-61963-rev. c, 09-oct-06 www.vishay.com 5 vishay siliconix SI1499DH typical characteristics 25 c, unless noted *the power dissipation p d is based on t j(max) = 175 c, using junc- tion-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. typical characteristics 25 c, unless noted vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73338. current derating* 0 1 2 3 4 5 6 0 25 50 75 100 125 150 175 i d - drain current (a) t c - case temperature (c) package limited normalized thermal transient impedance, junction-to-ambient 10 10 1 10 600 10 -1 -2 -3 -4 10 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance single pulse 0.05 0.02
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