2006-12-04 rev 1.3 page 1 bsv 236sp optimos ? ? ? ? -p small-signal-transistor product summary v ds -20 v r ds ( on ) 175 m ? i d -1.5 a feature ? p-channel ? enhancement mode ? super logic level (2.5 v rated) ? 150c operating temperature ? avalanche rated ? d v /d t rated pg-sot-363 vps05604 6 3 1 5 4 2 gate pin 3 drain pin 1,2, source pin 4 5,6 marking x2s type package tape and reel inf bsv 236sp pg-sot-363 l6327 :3000pcs/r. maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d -1.5 -1.2 a pulsed drain current t a =25c i d puls -6 avalanche energy, single pulse i d =-1.5 a , v dd =-10v, r gs =25 ? e as 9.5 mj reverse diode d v /d t i s =-1.5a, v ds =-16v, d i /d t =200a/s, t jmax =150c d v /d t -6 kv/s gate source voltage v gs 12 v power dissipation t a =25c p tot 0.56 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/56
2006-12-04 rev 1.3 page 2 bsv 236sp thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point r thjs - - 90 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 220 110 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =-250a v (br)dss -20 - - v gate threshold voltage, v gs = v ds i d =-8a v gs(th) -0.6 -0.9 -1.2 zero gate voltage drain current v ds =-20v, v gs =0, t j =25c v ds =-20v, v gs =0, t j =150c i dss - - -0.1 -10 -1 -100 a gate-source leakage current v gs =-12v, v ds =0 i gss - -10 -100 na drain-source on-state resistance v gs =-2.5v, i d =-0.8a r ds(on) - 193 285 m drain-source on-state resistance v gs =-4.5, i d =-1.5a r ds(on) - 131 175 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air; t 10 sec.
2006-1 2 -04 rev 1.3 page 3 bsv 236sp electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max i d =-1.2a 2.2 4.4 - s input capacitance c iss v gs =0, v ds =-15v, f =1mhz - 228 - pf output capacitance c oss - 92 - reverse transfer capacitance c rss - 75 - turn-on delay time t d ( on ) v dd =-10v, v gs =-4.5v, i d =-1a, r g =6 - 5.7 8.5 ns rise time t r - 8.5 12.7 turn-off delay time t d ( off ) - 14.1 21.1 fall time t f - 12.2 18.3 gate charge characteristics gate to source charge q g s v dd =-10v, i d =-1.5a - -0.4 -0.6 nc gate to drain charge q g d - -1.8 -2.7 gate charge total q g v dd =-10v, i d =-1.5a, v gs =0 to -4.5v - -3.8 -5.7 gate plateau voltage v (p lateau ) v dd =-10v, i d =-1.5a - -1.6 - v reverse diode inverse diode continuous forward current i s t a =25c - - -0.11 a inverse diode direct current, pulsed i sm - - -6 inverse diode forward voltage v sd v gs =0, | i f | = | i d | - 0.88 1.3 v reverse recovery time t rr v r =-10v, | i f | = | l d |, d i f /d t =100a/s - 16.4 20.5 ns reverse recovery charge q rr - 3.4 4.3 nc
2006-1 2 -04 rev 1.3 page 4 bsv 236sp 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 w 1.3 bsv 236sp p tot 2 drain current i d = f ( t a ) parameter: | v gs | 4.5 v 0 20 40 60 80 100 120 c 160 t a 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 a -1.6 bsv 236sp i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -2 -10 -1 -10 0 -10 1 -10 a bsv 236sp i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 45.0 s 4 transient thermal impedance z thjs = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w bsv 236sp z thjs single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2006-12-04 rev 1.3 page 5 bsv 236sp 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 1 2 3 4 5 6 7 8 v 10 - v ds 0 2 4 6 8 a 12 - i d vgs = -1.8v vgs = -2v vgs = -2.4v vgs = -2.6v vgs = -3v vgs = -3.4v vgs = -3.8v vgs = -4.5v vgs = -6v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 2 4 6 8 a 11 - i d 0 0.1 0.2 0.3 0.5 r ds(on) vgs = -2v vgs = - 2.4v vgs= - 2.6v vgs = - 3v vgs= - 3.4v vgs = - 3.8v vgs = - 4.5v vgs= - 5v vgs = - 6v 7 typ. transfer characteristics i d = f ( v gs ); | v ds | 2 x | i d | x r ds(on)max parameter: t p = 80 s 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 v 2.5 - v gs 0 0.5 1 1.5 2 2.5 3 3.5 4 a 5 - i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 a 5 - i d 0 1 2 3 4 5 6 s 8 g fs
2006-12-04 rev 1.3 page 6 bsv 236sp 9 drain-source on-resistance r ds(on) = f( t j ) parameter: i d = -1.5 a, v gs = -4.5 v -60 -20 20 60 100 c 160 t j 80 100 120 140 160 180 200 m 240 r ds(on) typ. 98% 10 gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -8 a -60 -20 20 60 100 c 160 t j 0.2 0.4 0.6 0.8 1 v 1.4 - v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz 0 5 10 v 20 - v ds 1 10 2 10 3 10 pf c crss coss ciss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 -10 -1 -10 0 -10 1 -10 a bsv 236sp i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2006-1 2 -04 rev 1.3 page 7 bsv 236sp 13 typ. avalanche energy e as = f ( t j ), par.: i d = -1.5 a v dd = -10 v, r gs = 25 25 50 75 100 c 150 t j 0 1 2 3 4 5 6 7 8 mj 10 e as 14 typ. gate charge | v gs | = f ( q gate ) parameter: i d = -1.5 a pulsed 0 1 2 3 4 5 6 nc 8 | q gate | 0 1 2 3 4 5 6 7 8 9 10 v 12 - v gs 0.2 vds max. 0.5 vds max. 0.8 vds max. 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -18 -18.5 -19 -19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 v -24.5 bsv 236sp v (br)dss
2006-12-04 rev 1.3 page 8 bsv 236sp published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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