caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res. 1 / 9 www.dynexsemi.com features 10s short circuit withstand high thermal cycling capability non punch through silicon isolated mmc base with aln substrates 6kv isolation voltage lead free construction applications motor drives high reliability inverters traction inverters the powerline range of high power modules includes half bridge, chopper, dual, single and bi- directional switch configurations covering voltages from 600v to 3300v and currents up to 3600a. the DIM400PHM17-A000 is a half bridge 1700v, n channel enhancement mode, insulated gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus full 10 s short circuit withstand. this module is optimised for traction drives and other application s requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ordering information order as: DIM400PHM17-A000 note: when ordering, please use the whole part numb er. . key parameters v ces 1700v v ce (sat) * (typ) 2.7v i c (max) 400a i c(pk) (max) 800a * (measured at the power busbars and not the auxili ary terminals) fig. 1 half bridge circuit diagram outline type code: p (see package details for further information) fig. 2 module outline DIM400PHM17-A000 half bridge igbt module ds5561-1.3 may 2008 (ln26122)
semiconductor DIM400PHM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 2 / 9 www.dynexsemi.com absolute maximum ratings stresses above those listed under ?absolute maximum ratings? may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of t he package. appropriate safety precautions should alw ays be followed. exposure to absolute maximum rati ngs may affect device reliability. tcase = 25c unless stated otherwise symbol parameter test conditions max. units v ces collector-emitter voltage v ge = 0v 1700 v v ges gate-emitter voltage 20 v i c continuous collector current t case = 75c 400 a i c(pk) peak collector current 1ms, t case =110c 800 a p max max. transistor power dissipation t case = 25c, t j = 150c 3470 w i 2 t diode i 2 t value (igbt arm) v r = 0, t p = 10ms, t vj = 125c 30 ka 2 s v isol isolation voltage ? per module commoned terminals to base plate. ac rms, 1 min, 50hz 6000 v q pd partial discharge ? per module iec1287. v 1 = 3500v, v 2 = 2600v, 50hz rms 10 pc
semiconductor DIM400PHM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 3 / 9 www.dynexsemi.com thermal and mechanical ratings internal insulation material: aln baseplate material: aisic creepage distance: 33mm clearance: 20mm cti (critical tracking index): 350 symbol parameter test conditions min. typ. max. units r th(j-c) thermal resistance ? transistor (per arm) continuous dissipation ? junction to case - - 36 c/kw r th(j-c) thermal resistance ? diode (per arm) continuous dissipation ? junction to case - - 80 c/kw r th(c-h) thermal resistance ? case to heatsink (per module) mounting torque 5nm (with mounting grease) - - 16 c/kw t j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperature range - -40 - 125 c - screw torque mounting ? m6 - - 5 nm electrical connections ? m5 - - 4 nm
semiconductor DIM400PHM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 4 / 9 www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise. symbol parameter test conditions min. typ. max. units i ces collector cut-off current v ge = 0v, v ce = v ces - - 1 ma v ge = 0v, v ce = v ces , t case = 125c - - 12 ma i ces gate leakage current v ge = 20v, v ce = 0v - - 2 na v ge(th) gate threshold voltage i c = 16ma, v ge = v ce 4.5 5.5 6.5 v v ce(sat) + collector-emitter saturation voltage v ge = 15v, i c = 400a - 2.7 3.2 v v ge = 15v, i c = 400a, t case = 125c - 3.4 4.0 v i f diode forward current dc - - 400 a i fm diode maximum forward current t p = 1ms - - 800 a v f diode forward voltage i f = 400a - 2.2 2.5 v i f = 400a, t case = 125c - 2.3 2.6 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz - 30 - nf l m module inductance- per arm - - 20 - nh r int internal resistance- per arm - - 0.27 - m sc data short circuit. i sc t j = 125c, v cc = 1000v, i 1 - 1850 - a t p 10s, v ce(max) = v ces - l*.di/dt i 2 - 1600 - a iec 60747-9 note: + measured at the auxiliary terminals * l is the circuit inductance + l m
semiconductor DIM400PHM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 5 / 9 www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise. symbol parameter test conditions min. typ. max. units t d(off) turn-off delay time i c = 400a - 1150 - ns t f fall time v ge = 15v - 100 - ns e off turn-off energy loss v ce = 900v - 120 - mj t d(on) turn-on delay time r g(on) = r g(off) = 4.7 - 250 - ns t r rise time l 100nh - 250 - ns e o turn-on energy loss - 150 - mj q g gate charge - 4.5 - c q rr diode reverse recovery charge i f = 400a, v r = 900v, - 100 - c i rr diode reverse current dl f /dt = 3000a/s - 230 - a e rec diode reverse recovery energy - 70 - mj t case = 125c unless stated otherwise. symbol parameter test conditions min. typ. max. units t d(off) turn-off delay time i c = 400a - 1400 - ns t f fall time v ge = 15v - 130 - ns e off turn-off energy loss v ce = 900v - 180 - mj t d(on) turn-on delay time r g(on) = r g(off) = 4.7 - 400 - ns t r rise time l 100nh - 250 - ns e on turn-on energy loss - 170 - mj q rr diode reverse recovery charge i f = 400a, v r = 900v, - 170 - c i rr diode reverse current dl f /dt = 2500a/s - 270 - a e rec diode reverse recovery energy - 100 - mj
semiconductor DIM400PHM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 6 / 9 www.dynexsemi.com fig.3 typical output characteristics fig.4 typical output characteristics fig.5 typical switching energy vs collector current fig.6 typical switching energy vs gate resistance
semiconductor DIM400PHM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 7 / 9 www.dynexsemi.com fig.7 diode typical forward characteristics fig.8 reverse bias safe operating area fig.9 diode reverse bias safe operating area fig.10 transient thermal impedance
semiconductor DIM400PHM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 8 / 9 www.dynexsemi.com package details for further package information, please visit our w ebsite or contact customer services. all dimension s in mm, unless stated otherwise. do not scale. nominal weight: 750g module outline type code: p
semiconductor DIM400PHM17-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 9 / 9 www.dynexsemi.com power assembly capability the power assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible r ange of heatsink and clamping systems in line with advances in device voltages and current capability of our semic onductors. we offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. the assembly group offers high quality engineering support dedicated to designing new unit s to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power as sembly complete solution (pacs). heatsinks the power assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semic onductors. data with respect to air natural, force d air and liquid cooling (with flow rates) is available on re quest. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com headquarters operations customer service dynex semiconductor ltd tel: +44(0)1522 502753 / 502901. fax: +44(0)1522 50 0020 doddington road, lincoln lincolnshire, ln6 3lf. united kingdom. tel: +44(0)1522 500500 fax: +44(0)1522 500550 these offices are supported by representatives and distributors in many countries world-wide. dynex semiconductor 2003 technical documentation ? not for resale. produced in united kingdom. datasheet annotations: dynex semiconductor annotate datasheets in the top right hand corner of the front page, to indicate pr oduct status. the annotations are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the data sheet represents the product as it is understood bu t details may change. advance information: the product design is complete and final characteri sation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification. this publication is issued to provide information only wh ich (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. no warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. the company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user?s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. all products and materials ar e sold and services provided subject to the company?s conditions of sale, which are ava ilable on request. all brand names and product names used in this publicatio n are trademarks, registered trademarks or trade names of their respective owners.
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