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  MJD31C document number: ds31625 rev. 3 - 2 1 of 5 www.diodes.com april 2010 ? diodes incorporated MJD31C new product npn surface mount transistor features ? epitaxial planar die construction ? high collector-emittervoltage ? ideally suited for automated assembly processes ? ideal for power switching or amplification applications ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: dpak ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte ti n annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.34 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v continuous collector current i c 3 a peak pulse collector current i cm 5 a continuous base current i b 1 a thermal characteristics characteristic symbol value unit power dissipation @t c = 25c p d 15 w thermal resistance, junction to case r jc 8.33 c/w power dissipation @t a = 25c (note 3) p d 1.5 w thermal resistance, junction to ambient r ja 80 c/w operating and storage temperature range t j , t stg -55 to +150 c top view device schematic pin out configuration collector base emitter 3 1 2 4 3 1 2,4
MJD31C document number: ds31625 rev. 3 - 2 2 of 5 www.diodes.com april 2010 ? diodes incorporated MJD31C new product typical characteristics 100m 1 10 100 10m 100m 1 10 single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0.1 1 10 100 0.01 0.1 1 10 single pulse t case =25c 1ms 10ms 100ms v ce(sat) limited 100 s dc safe operating area v ce collector-emitter voltage (v) i c collector current (a) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 t amb =25c minimum copper transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 0 2 4 6 8 d=0.5 d=0.2 d=0.1 d=0.05 single pulse t case =25c transient thermal impedance pulse width (s) thermal resistance (c/w)
MJD31C document number: ds31625 rev. 3 - 2 3 of 5 www.diodes.com april 2010 ? diodes incorporated MJD31C new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test conditions off characteristics collector-emitter sustaining voltage (note 4) v ( sus ) ceo 100 ? ? v i c = 30ma, i b = 0 collector cut-off current i ceo ? ? 50 a v cb = 60v, i b = 0 collector cut-off current i ces ? ? 20 a v ce = 100v, v eb = 0 emitter cut-off current i ebo ? ? 1.0 ma v eb = 5.0v, i c = 0 on characteristics (note 4) collector-emitter saturation voltage v ce ( sat ) ? ? 1.2 v i c = 3.0a, i b = 375ma base-emitter turn-on voltage v be ( on ) ? ? 1.8 v v ce = 4.0v, i c = 3a dc current gain h fe 25 10 ? ? 50 ? v ce = 4.0v, i c = 1a v ce = 4.0v, i c = 3a small signal characteristics current gain-bandwidth product f t 3.0 ? ? mhz i c = 500ma, v ce = 10v, f = 1mhz small signal current gain h fe 20 ? ? ? v ce = 10v, i c = 0.5a, f = 1khz notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our websit e at http://www.diodes.com/products/lead_free/index.php. 3. device mounted on fr-4 pcb with minimum recommended pad layout. 4. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. 0 0 p , power dissipation (mw) d t , ambient temperature ( c) a fig. 1 power dissipation vs. ambient temperature 0.5 1.0 1.5 2.0 25 50 75 100 125 150 1 10 100 1,000 10,000 i , collector current (ma) c fig. 2 typical dc current gain vs. collector current 10 100 1,000 h, d c c u r r en t g ain fe t = 150c a t = 25c a t = -55c a t = 85c a v = 4v ce 1 10 100 1,000 10,000 i , collector current (ma) c fig. 3 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) i/i = 8 cb t = 85c a t = 25c a t = -55c a t = 150c a 1 10 100 1,000 10,000 i , collector current (ma) c fig. 4 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) 1. 2 t = 150c a t = 25c a t = -55c a t = 85c a v = 4v ce
MJD31C document number: ds31625 rev. 3 - 2 4 of 5 www.diodes.com april 2010 ? diodes incorporated MJD31C new product 1 10 100 1,000 10,000 i , collector current (ma) c fig. 5 typical base-emitter saturation voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1.2 v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) 0 t = 150c a t = 25c a t = -55c a t = 85c a i = 8 cb /i 1 10 100 1,000 0.1 1 10 100 v , reverse voltage (v) r fig. 6 typical capacitance characteristics c a p a c i t an c e (pf) c ibo c obo f = 1mhz ordering information (note 5) part number case packaging MJD31C-13 dpak 2500/tape & reel notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information package outline dimensions dpak dim min max a 2.18 2.40 a1 0.89 1.14 b 0.61 typ b2 5.20 5.50 c 0.45 0.58 c1 0.45 0.58 d 5.40 6.20 e 6.35 6.80 e 2.28 typ e1 4.57 typ h 9.00 10.40 l 0.51 ? l1 0.64 1.02 l2 0.88 1.27 all dimensions in mm MJD31C = product type marking code = manufacturers? code marking yyww = date code marking yy = last digit of year, (ex: 08 = 2008) ww = week code 01-52 e b seating plane l a c1 l1 c b2 e 1 d e a1 l2 h y yww MJD31C
MJD31C document number: ds31625 rev. 3 - 2 5 of 5 www.diodes.com april 2010 ? diodes incorporated MJD31C new product suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 x2 c z x1 y1 e1 y2


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Price & Availability of MJD31C
Newark

Part # Manufacturer Description Price BuyNow  Qty.
MJD31CQ-13
29AK0900		 Diodes Incorporated Trans, Npn, 100V, 3A, 150Deg C, 15W Rohs Compliant: Yes |Diodes Inc. MJD31CQ-13 1000: USD0.305
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250: USD0.385
100: USD0.416
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MJD31CT4G
54T9964		 onsemi Bipolar Transistor, Npn, 100V, 3A, To-252; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD31CT4G 500: USD0.294
250: USD0.329
100: USD0.364
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MJD31CT4-A
45AC7353		 STMicroelectronics Transistor, Npn, 100V, 3A, To-252; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Transition Frequency Ft:-; Power Dissipation Pd:15W; Dc Collector Current:3A; Dc Current Gain Hfe:10Hfe; Transistor Case Rohs Compliant: Yes |Stmicroelectronics MJD31CT4-A 1000: USD0.477
500: USD0.508
250: USD0.649
100: USD0.749
50: USD0.816
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MJD31CG
38K5597		 onsemi Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 1.56 W, 3 A, 10 Rohs Compliant: Yes |Onsemi MJD31CG 10050: USD0.313
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MJD31CG
98H0735		 onsemi Rf Transistor, Npn, 100V, 3Mhz Dpak; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD31CG 10050: USD0.36
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DigiKey

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MJD31CQ-13
MJD31CQ-13DICT-ND		 Diodes Incorporated TRANS NPN 100V 3A TO252-3 1000: USD0.26179
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MJD31CAJ
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MJD31CUQ-13
31-MJD31CUQ-13CT-ND		 Diodes Incorporated TRANS NPN 100V 3A TO252 1000: USD0.2828
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MJD31CHQ-13
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MJD31C
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Avnet Americas

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MJD31CT4
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MJD31CT4-A
MJD31CT4-A		 STMicroelectronics Trans GP BJT NPN 100V 3A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: MJD31CT4-A) 10000: USD0.39967
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NJVMJD31CRLG
NJVMJD31CRLG		 onsemi Trans GP NPN 100V 5A 3-Pin DPAK T/R - Tape and Reel (Alt: NJVMJD31CRLG) 360000: USD0.22506
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MJD31CAJ
MJD31CAJ		 Nexperia Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: MJD31CAJ) 250000: USD0.10664
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MJD31CG
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Mouser Electronics

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MJD31CG
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MJD31CHQ-13
621-MJD31CHQ-13		 Diodes Incorporated Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K 1: USD0.53
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MJD31CQ-13
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MJD31CT4G
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MJD31C-13
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Arrow Electronics

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MJD31CT4-A
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MJD31C-13
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MJD31CT4-A
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RS

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MJD31C1G
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Verical

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MJD31CJ
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MJD31CG
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Bristol Electronics

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Rochester Electronics

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MJD31CEITU
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MJD31CITU
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MJD31C1G
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NJVMJD31CG
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TTI

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MJD31CJ
MJD31CJ		 Nexperia Bipolar Transistors - BJT MJD31C/SOT428/DPAK 2500: USD0.121
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MJD31CAJ
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MJD31CH-QJ
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TME

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MJD31CT4G
MJD31CT4G		 onsemi Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK 2500: USD0.22
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500: USD0.237
250: USD0.254
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MJD31CG
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MJD31CT4
MJD31CT4		 STMicroelectronics Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK 12500: USD0.217
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NJVMJD31CT4G
NJVMJD31CT4G		 onsemi Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry 2500: USD0.285
1000: USD0.29
500: USD0.317
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Ameya Holding Limited

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MJD31CG
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MJD31C-13
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ComSIT USA

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NexGen Digital

Part # Manufacturer Description Price BuyNow  Qty.
MJD31C
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Chip 1 Exchange

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MJD31CT4G
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MJD31CT4
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Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
MJD31CH-QJ
MJD31CH-QJ		 Nexperia Transistor GP BJT NPN 100V 3A 3-Pin DPAK T/R (Alt: MJD31CH-QJ) BuyNow
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MJD31CT4-A
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MJD31CT4G
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7500
MJD31CQ-13
MJD31CQ-13		 Diodes Incorporated Trans GP NPN 100V 3A 3-Pin TO-252 T/R (Alt: MJD31CQ-13) BuyNow
2500
MJD31CUQ-13
MJD31CUQ-13		 Diodes Incorporated Trans GP BJT NPN 100V 3A 3-Pin TO-252 T/R (Alt: MJD31CUQ-13) BuyNow
2500

Chip Stock

Part # Manufacturer Description Price BuyNow  Qty.
MJD31CRLG
 onsemi RFQ
1732
NJVMJD31CT4G
 onsemi RFQ
366430

Chip1Stop

Part # Manufacturer Description Price BuyNow  Qty.
NJVMJD31CG
C1S541900962237		 onsemi Trans GP BJT NPN 100V 3A 1560mW Automotive 3-Pin(2+Tab) DPAK Tube 5: USD0.18
 BuyNow
540
MJD31CRLG
C1S541900414730		 onsemi Trans GP BJT NPN 100V 3A 1560mW Automotive 3-Pin(2+Tab) DPAK T/R 10: USD0.294
1: USD0.318
 BuyNow
680

Component Electronics, Inc

Part # Manufacturer Description Price BuyNow  Qty.
MJD31C
 onsemi IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
241
MJD31C
 Motorola Semiconductor Products IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
150
MJD31CG
 onsemi IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
10
MJD31CT4
 onsemi IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
593
MJD31CT4
 STMicroelectronics IN STOCK SHIP TODAY 1000: USD1
100: USD1.15
1: USD1.54
 BuyNow
55

Flip Electronics

Part # Manufacturer Description Price BuyNow  Qty.
NJVMJD31CRLG
 onsemi Stock RFQ
5400

New Advantage Corporation

Part # Manufacturer Description Price BuyNow  Qty.
MJD31CUQ-13
 Diodes Incorporated 2500: USD0.3279
 BuyNow
2500
MJD31CQ-13
 Diodes Incorporated TRANS NPN 100V 3A DPAK 2500: USD0.2
10000: USD0.1867
 BuyNow
10000
MJD31CG
 onsemi MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-252-3 375: USD0.4429
1050: USD0.4133
 BuyNow
1050
MJD31C-13
 Diodes Incorporated MJD31C Series 100 V 3 A 1.5 W NPN High Voltage Transistor - TO252 (DPAK) 2500: USD0.1294
2297500: USD0.1208
 BuyNow
2297500
NJVMJD31CT4G
 onsemi BIP DPAK NPN 3A 100V TR 2500: USD0.3811
135000: USD0.3526
 BuyNow
135000

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
MJD31C
 MFG UPON REQUEST RFQ
1275
MJD31C
 Motorola Semiconductor Products RFQ
5176
MJD31C
 STMicroelectronics RFQ
8217
MJD31CQ-13
 Diodes Incorporated RFQ
103
MJD31CRL
 MFG UPON REQUEST RFQ
1082

South Electronics

Part # Manufacturer Description Price BuyNow  Qty.
MJD31CRL
 onsemi MJD31CRL RFQ
0
MJD31CG
 onsemi MJD31CG RFQ
0
MJD31CT4G
 onsemi MJD31CT4G RFQ
0
MJD31C1G
 onsemi MJD31C1G RFQ
0
MJD31CT4
 JIANGSU CHANGJIANG ELEC. MJD31CT4 RFQ
0

Win Source Electronics

Part # Manufacturer Description Price BuyNow  Qty.
MJD31CT4G
 onsemi TRANS NPN 100V 3A DPAK 150: USD0.34
360: USD0.279
560: USD0.27
770: USD0.261
990: USD0.253
1325: USD0.227
 BuyNow
63995
MJD31CT4
 STMicroelectronics TRANS NPN 100V 3A DPAK 155: USD0.325
375: USD0.267
580: USD0.259
800: USD0.25
1035: USD0.242
1385: USD0.217
 BuyNow
85000
NJVMJD31CT4G
 onsemi TRANS NPN 100V 3A DPAK / Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Surface Mount DPAK 95: USD0.549
225: USD0.45
345: USD0.436
475: USD0.422
615: USD0.408
820: USD0.366
 BuyNow
176607

Wuhan P&S

Part # Manufacturer Description Price BuyNow  Qty.
NJVMJD31CT4G
 onsemi 3A,100V,NPN Bipolar Power Transistor 1: USD0.64
100: USD0.41
500: USD0.34
1000: USD0.31
 BuyNow
2400

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