sot223 pnp silicon planar high current (high performance) transistors issue 3 - april 2000 features * 5 amps continuous current , up to 15 amps peak current * very low saturation voltages * excellent gain characteristics specified up to 10 amps * p tot = 3 watts * fzt951 exhibts extremely low equivalent on resistance; r ce(sat) 55m at 4a complementary types - fzt951 = fzt851 FZT953 = fzt853 partmarking details - device type in full absolute maximum ratings. parameter symbol fzt951 FZT953 unit collector-base voltage v cbo -100 -140 v collector-emitter voltage v ceo -60 -100 v emitter-base voltage v ebo -6 v peak pulse current i cm -15 -10 a continuous collector current i c -5 a power dissipation at t amb =25c p tot 3w operating and storage temperature range t j :t stg -55 to +150 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 4 square inch minimum fzt951 FZT953 c c e b 3 - 279
3 - 280 3 - 281 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (s at ) - (v olts) t amb =25c v ce(sat) v i c i c - collector current (amps) v ce ( s at ) - (v olts) -55c +25c +175c -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - normalised g a in v b e (s at ) - (v olts) v b e - (v olts) i c - colle c tor curre n t ( a mps) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =1v v ce =1v 300 200 100 h fe - t y p i c a l g a i n v ce - collector voltage (volts) safe operating area 0.1 100 110 0.1 1 10 100 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.001 0.001 0.001 0.001 fzt951 fzt951 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -100 -140 v i c =-100 a collector-emitter breakdown voltage v (br)cer -100 -140 v i c =-1 a, rb 1k collector-emitter breakdown voltage v (br)ceo -60 -90 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 a collector cut-off current i cbo -50 -1 na a v cb =-80v v cb =-80v, t amb =100 c collector cut-off current i cer r 1k -50 -1 na a v cb =-80v v cb =-80v, t amb =100 c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -20 -85 -155 -370 -50 -140 -210 -460 mv mv mv mv i c =-100ma, i b =-10ma* i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* i c =-5a, i b =-500ma* base-emitter saturation voltage v be(sat) -1080 -1240 mv i c =-5a, i b =-500ma* base-emitter turn-on voltage v be(on) -935 -1070 mv i c =-5a, v ce =-1v* static forward current transfer ratio h fe 100 100 75 10 200 200 90 25 300 i c =-10ma, v ce =-1v* i c =-2a, v ce =-1v* i c =-5a, v ce =-1v* i c =-10a, v ce =-1v* transition frequency f t 120 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 74 pf v cb =-10v, f=1mhz switching times t on t off 82 350 ns ns i c =-2a, i b1 =-200ma i b2 =200ma, v cc =-10v * measured under pulsed conditions. pulse width =300 s. duty cycle 2% spice parameter data is available upon request for this device
3 - 280 3 - 281 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (s at ) - (v olts) t amb =25c v ce(sat) v i c i c - collector current (amps) v ce ( s at ) - (v olts) -55c +25c +175c -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - normalised g a in v b e (s at ) - (v olts) v b e - (v olts) i c - colle c tor curre n t ( a mps) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =1v v ce =1v 300 200 100 h fe - t y p i c a l g a i n v ce - collector voltage (volts) safe operating area 0.1 100 110 0.1 1 10 100 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.001 0.001 0.001 0.001 fzt951 fzt951 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -100 -140 v i c =-100 a collector-emitter breakdown voltage v (br)cer -100 -140 v i c =-1 a, rb 1k collector-emitter breakdown voltage v (br)ceo -60 -90 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 a collector cut-off current i cbo -50 -1 na a v cb =-80v v cb =-80v, t amb =100 c collector cut-off current i cer r 1k -50 -1 na a v cb =-80v v cb =-80v, t amb =100 c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -20 -85 -155 -370 -50 -140 -210 -460 mv mv mv mv i c =-100ma, i b =-10ma* i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* i c =-5a, i b =-500ma* base-emitter saturation voltage v be(sat) -1080 -1240 mv i c =-5a, i b =-500ma* base-emitter turn-on voltage v be(on) -935 -1070 mv i c =-5a, v ce =-1v* static forward current transfer ratio h fe 100 100 75 10 200 200 90 25 300 i c =-10ma, v ce =-1v* i c =-2a, v ce =-1v* i c =-5a, v ce =-1v* i c =-10a, v ce =-1v* transition frequency f t 120 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 74 pf v cb =-10v, f=1mhz switching times t on t off 82 350 ns ns i c =-2a, i b1 =-200ma i b2 =200ma, v cc =-10v * measured under pulsed conditions. pulse width =300 s. duty cycle 2% spice parameter data is available upon request for this device
electrical characteristics (at t amb = 25 c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -140 -170 v i c =-100 a collector-emitter breakdown voltage v (br)cer -140 -170 v i c =-1 a, rb 1k collector-emitter breakdown voltage v (br)ceo -100 -120 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 a collector cut-off current i cbo -50 -1 na a v cb =-100v v cb =-100v, t amb =100 c collector cut-off current i cer r 1k -50 -1 na a v cb =-100v v cb =-100v, t amb =100 c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -20 -90 -160 -300 -50 -115 -220 -420 mv mv mv mv i c =-100ma, i b =-10ma* i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* i c =-4a, i b =-400ma* base-emitter saturation voltage v be(sat) -1010 -1170 mv i c =-4a, i b =-400ma* base-emitter turn-on voltage v be(on) -925 -1160 mv i c =-4a, v ce =-1v* static forward current transfer h fe 100 100 50 30 200 200 90 50 15 300 i c =-10ma, v ce =-1v* i c =-1a, v ce =-1v* i c =-3a, v ce =-1v* i c =-4a, v ce =-1v* i c =-10a, v ce =-1v* transition frequency f t 125 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 65 pf v cb =-10v, f=1mhz switching times t on t off 110 460 ns ns i c =-2a, i b1 =-200ma i b2 =200ma, v cc =-10v *measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for this device 3 - 283 FZT953 3 - 282 FZT953 -55 c +25 c +100 c +175 c +100 c +25 c -55 c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( sa t ) - (v olts) t amb =25 c v ce(sat) v i c i c - collector current (amps) v ce (s a t ) - (v olts) -55 c +25 c +175 c -55 c +25 c +100 c +175 c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - no r ma l ised ga i n v be ( sa t ) - (v olts) v be - (v olts) i c - co l le c to r cur r e nt ( am ps) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =1v v ce =1v 300 200 100 h fe - typical gain v ce - collector voltage (volts) safe operating area 0.1 100 110 0.01 0.1 1 10 single pulse test at t amb =25 c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.001 0.001 0.001
electrical characteristics (at t amb = 25 c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -140 -170 v i c =-100 a collector-emitter breakdown voltage v (br)cer -140 -170 v i c =-1 a, rb 1k collector-emitter breakdown voltage v (br)ceo -100 -120 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 a collector cut-off current i cbo -50 -1 na a v cb =-100v v cb =-100v, t amb =100 c collector cut-off current i cer r 1k -50 -1 na a v cb =-100v v cb =-100v, t amb =100 c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -20 -90 -160 -300 -50 -115 -220 -420 mv mv mv mv i c =-100ma, i b =-10ma* i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* i c =-4a, i b =-400ma* base-emitter saturation voltage v be(sat) -1010 -1170 mv i c =-4a, i b =-400ma* base-emitter turn-on voltage v be(on) -925 -1160 mv i c =-4a, v ce =-1v* static forward current transfer h fe 100 100 50 30 200 200 90 50 15 300 i c =-10ma, v ce =-1v* i c =-1a, v ce =-1v* i c =-3a, v ce =-1v* i c =-4a, v ce =-1v* i c =-10a, v ce =-1v* transition frequency f t 125 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 65 pf v cb =-10v, f=1mhz switching times t on t off 110 460 ns ns i c =-2a, i b1 =-200ma i b2 =200ma, v cc =-10v *measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for this device 3 - 283 FZT953 3 - 282 FZT953 -55 c +25 c +100 c +175 c +100 c +25 c -55 c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( sa t ) - (v olts) t amb =25 c v ce(sat) v i c i c - collector current (amps) v ce (s a t ) - (v olts) -55 c +25 c +175 c -55 c +25 c +100 c +175 c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - no r ma l ised ga i n v be ( sa t ) - (v olts) v be - (v olts) i c - co l le c to r cur r e nt ( am ps) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =1v v ce =1v 300 200 100 h fe - typical gain v ce - collector voltage (volts) safe operating area 0.1 100 110 0.01 0.1 1 10 single pulse test at t amb =25 c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.001 0.001 0.001
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