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type IPD50P04P4-13 optimos ? -p2 power-transistor package marking features ? p-channel - normal level - enhancement mode ? aec qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green package (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25c, v gs =-10v -50 a t c =100c, v gs =-10v 2) -45 pulsed drain current 2) i d,pulse t c =25c -20 avalanche energy, single pulse 2) e as i d =-25a 18 mj avalanche current, single pulse i as - -50 a gate source voltage v gs - 20 v power dissipation p tot t c =25 c 58 w operating and storage temperature t j , t stg - -55 ... +175 c iec climatic category; din iec 68-1 - - 55/175/56 value v ds -40 v r ds(on) 12.6 m w i d -50 a product summary pg-to252-3-313 type package marking IPD50P04P4-13 pg-to252-3-313 4p0413 rev. 1.0 page 1 2011-03-14
IPD50P04P4-13 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - - 2.6 k/w smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = -1ma -40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-85a -2.0 -3.0 -4.0 zero gate voltage drain current i dss v ds =-32v, v gs =0v, t j =25c - -0.05 -1 a v ds =-32v, v gs =0v, t j =125c 2) - -20 -200 gate-source leakage current i gss v gs =-20v, v ds =0v - - -100 na drain-source on-state resistance r ds(on) v gs =-10v, i d =-50a - 9.2 12.6 m w values rev. 1.0 page 2 2011-03-14
IPD50P04P4-13 parameter symbol conditions unit min. typ. max. dynamic characteristics 2) input capacitance c iss - 2820 3670 pf output capacitance c oss - 1000 1500 reverse transfer capacitance c rss - 30 60 turn-on delay time t d(on) - 17 - ns rise time t r - 10 - turn-off delay time t d(off) - 22 - fall time t f - 28 - gate charge characteristics 2) gate to source charge q gs - 14 19 nc gate to drain charge q gd - 7 14 gate charge total q g - 39 51 gate plateau voltage v plateau - 5.4 - v reverse diode diode continous forward current 2) i s - - -50 a diode pulse current 2) i s,pulse - - -200 diode forward voltage v sd v gs =0v, i f =-50a, t j =25c - -1 -1.3 v reverse recovery time 2) t rr - 39 - ns reverse recovery charge 2) q rr - 32 - nc v r =-20v, i f =-50a, d i f /d t =-100a/s 2) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 2.6k/w the chip is able to carry -55a at 25c. t c =25c values v gs =0v, v ds =-25v, f =1mhz v dd =-20v, v gs =-10v, i d =-50a, r g =3.5 w v dd =-32v, i d =-50a, v gs =0 to -10v rev. 1.0 page 3 2011-03-14
IPD50P04P4-13 1 power dissipation 2 drain current p tot = f( t c ); v gs - 6 v i d = f( t c ); v gs = -10v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t 10 s 100 s 1 ms 1 10 100 0.1 1 10 100 -v ds [v] - i d [ a ] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z t h j c [ k / w ] 0 20 40 60 80 0 50 100 150 200 t c [c] p t o t [ w ] 0 20 40 60 0 50 100 150 200 t c [c] - i d [ a ] rev. 1.0 page 4 2011-03-14
IPD50P04P4-13 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = ( i d ); t j = 25 c parameter: - v gs parameter: - v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = -6v r ds(on) = f( t j ); i d = -50 a; v gs = -10 v parameter: t j 10 11 12 13 14 15 16 17 18 19 20 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m w ] -55 c 25 c 175 c 0 70 140 210 280 2 3 4 5 6 7 8 -v gs [v] - i d [ a ] 5v 6v 7v 8v 10v 0 70 140 210 280 0 1 2 3 4 5 6 -v ds [v] - i d [ a ] 5v 6v 7v 8v 10v 5 10 15 20 25 30 35 40 0 25 50 -i d [a] r d s ( o n ) [ m w ] 6v 5v rev. 1.0 page 5 2011-03-14
IPD50P04P4-13 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: - i d 11 typical forward diode characteristicis 12 drain-source breakdown voltage if = f(v sd ) v br(dss) = f( t j ); i d = -1 ma parameter: t j 25 c 175 c 10 0 10 1 10 2 10 3 0 0.4 0.8 1.2 1.6 -v sd [v] - i f [ a ] ciss coss crss 10 5 10 4 10 3 10 2 10 1 0 5 10 15 20 25 30 -v ds [v] c [ p f ] 85a 850a 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] - v g s ( t h ) [ v ] 35 36 37 38 39 40 41 42 43 44 45 -60 -20 20 60 100 140 180 t j [c] - v b r ( d s s ) [ v ] rev. 1.0 page 6 2011-03-14
IPD50P04P4-13 13 typ. gate charge 14 gate charge waveforms v gs = f( q gate ); i d = -50 a pulsed parameter: v dd v gs q gate q gs q gd q g v gs q gate q gs q gd q g -8v -32v 0 2 4 6 8 10 12 0 10 20 30 40 50 60 q gate [nc] - v g s [ v ] rev. 1.0 page 7 2011-03-14
IPD50P04P4-13 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2011 all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 8 2011-03-14
IPD50P04P4-13 revision history version 0.1 0.2 1.0 final data sheet date 29.01.2010 10.12.2010 14.03.2011 changes initial target data sheet preliminary data sheet rev. 1.0 page 9 2011-03-14

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Price & Availability of IPD50P04P4-13

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA2 51AH5907	Infineon Technologies AG	Mosfet, Aec-Q101, P-Ch, -40V, -50A, 58W Rohs Compliant: Yes \|Infineon IPD50P04P413ATMA2	1000: USD0.626 500: USD0.769 250: USD0.838 100: USD0.907 50: USD0.993 25: USD1.08 10: USD1.16 1: USD1.41	9470
IPD50P04P413ATMA1 86AK5217	Infineon Technologies AG	Mosfet, P-Ch, 40V, 50A, To-252 Rohs Compliant: Yes \|Infineon IPD50P04P413ATMA1	15000: USD0.536 10000: USD0.549 5000: USD0.562 2500: USD0.576	0
IPD50P04P413ATMA1 85X6032	Infineon Technologies AG	Mosfet, P-Ch, -40V, -50A, 175Deg C, 58W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes \|Infineon IPD50P04P413ATMA1	1000: USD0.648 500: USD0.675 250: USD0.779 100: USD0.878 50: USD1.05 25: USD1.16 10: USD1.29 1: USD1.5	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA2 448-IPD50P04P413ATMA2CT-ND	Infineon Technologies AG	MOSFET P-CH 40V 50A TO252-3	12500: USD0.51549 5000: USD0.54043 2500: USD0.56745 1000: USD0.60279 500: USD0.73998 100: USD0.873 10: USD1.122 1: USD1.37	8835
IPD50P04P413ATMA1 IPD50P04P413ATMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 40V 50A TO252-3	12500: USD0.51549 5000: USD0.54043 2500: USD0.56745 1: USD1.37	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA2 IPD50P04P413ATMA2	Infineon Technologies AG	Transistor MOSFET P-CH 40V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50P04P413ATMA2)		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA2 726-IPD50P04P413ATM	Infineon Technologies AG	MOSFET MOSFET_(20V 40V)	1: USD1.37 10: USD1.12 100: USD0.872 500: USD0.739 1000: USD0.602 2500: USD0.567 5000: USD0.54 10000: USD0.515	8158

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA2 82122302	Infineon Technologies AG	Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R	2500: USD0.8535	2500
IPD50P04P413ATMA2 75724670	Infineon Technologies AG	Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R	2000: USD0.6463 1000: USD0.6863 500: USD0.7588 200: USD0.7613 100: USD0.8063 50: USD0.9563 31: USD1.0288	2490
IPD50P04P4-13 69135765	Infineon Technologies AG	Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R	1000: USD0.8506 500: USD0.8793 250: USD0.9123 100: USD0.9504 86: USD0.9949	2080

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P4-13	Infineon Technologies AG			2500
IPD50P04P4-13	Infineon Technologies AG		135: USD0.675 39: USD1.125 13: USD1.35 3: USD1.8	334

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P4-13	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0126OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252	349: USD0.7975 158: USD0.8613 1: USD1.595	671
IPD50P04P4-13	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0126OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252	1176: USD0.774 630: USD0.8514 1: USD2.064	1664
IPD50P04P4-13	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0126OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252	168: USD0.84 51: USD0.9 1: USD2.4	267

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA1	Infineon Technologies AG	IPD50P04 - 20V-150V P-Channel Automotive MOSFET	1000: USD0.5103 500: USD0.5403 100: USD0.5643 25: USD0.5883 1: USD0.6003	2460
IPD50P04P413ATMA2	Infineon Technologies AG	IPD50P04P4-13 - MOSFET_(20V,40V)	1000: USD0.5103 500: USD0.5403 100: USD0.5643 25: USD0.5883 1: USD0.6003	48806

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P4-13	Infineon Technologies AG	IPD50P04P4-13 , P沟道 MOSFET 晶体管, 50 A, Vds=-40 V, 3针 TO-252封装		1079
IPD50P04P413ATMA1	Infineon Technologies AG		2500: USD0.65891135 5000: USD0.63913137 10000: USD0.6199843	14975
IPD50P04P413ATMA2	Infineon Technologies AG		20: USD1.2122767 640: USD1.1758814 1260: USD1.1407522	7500

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P4-13 TMOS2982	Infineon Technologies AG	P-CH 40V 50A 9,2mOhm TO252-3	2500: USD0.6808 5000: USD0.5252	20000

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA2 C1S322000876624	Infineon Technologies AG	MOSFET	2000: USD0.517 1000: USD0.549 500: USD0.607 200: USD0.609 100: USD0.645 50: USD0.765 10: USD0.823 1: USD1.23	2490

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA1	Infineon Technologies AG	MOSFET P-CH 40V 50A TO252-3	1: USD0.73022	2110

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P4-13	Infineon Technologies AG	RoHS(Ship within 1day) - D/C 2023	1000: USD0.516 500: USD0.518 100: USD0.518 50: USD0.582 10: USD0.662 1: USD0.808	2080

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA2 SP002319830	Infineon Technologies AG	Transistor MOSFET P-CH 40V 50A 3-Pin TO-252 T/R (Alt: SP002319830)		7500

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P413ATMA2	Infineon Technologies AG		2500: USD0.8484 5000: USD0.7851	5000

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P4-13	Infineon Technologies AG	TO-252		4760

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD50P04P4-13	Infineon Technologies AG	OptiMOS-P2 Power-Transistor	18: USD2.911 42: USD2.389 65: USD2.314 90: USD2.239 116: USD2.165 155: USD1.941	37126
IPD50P04P413ATMA1	Infineon Technologies AG	MOSFET P-CH 40V 50A TO252-3	30: USD1.894 65: USD1.554 100: USD1.506 140: USD1.457 180: USD1.408 240: USD1.263	37126

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