1995. 2. 24 1/2 semiconductor technical data KTD2059 triple diffused npn transistor revision no : 1 general purpose application. features complementary to ktb1367. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) note : h fe (1) classification r:40 80, o:70 140, y:120 240 characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current i c 5 a base current i b 0.5 a collector power dissipation (tc=25 1 ) p c 30 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =100v, i e =0 - - 100 a emitter cut-off current i ebo v eb =5v, i c =0 - - 1.0 ma collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 100 - - v dc current gain h fe (1) (note) v ce =5v, i c =1a 40 - 240 h fe (2) v ce =5v, i c =4a 20 - - collector-emitter saturation voltage v ce(sat) i c =4a, i b =0.4a - - 2.0 v base-emitter voltage v be v ce =5v, i c =1a - - 1.5 v transition frequency f t v ce =5v, i c =1a - 12 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 100 - pf
1995. 2. 24 2/2 KTD2059 revision no : 1 collector power dissipation ambien t te mper at ur e t a ( c ) pc - ta collector-emitter saturation ce(sat) 0.3 0.1 0.03 0.01 collector current i (a) c v - i safe operating area ce collector-emitter voltage v (v) 2 5 10 30 c collector current i (a) 0.1 i - v cce ce collector-emitter voltage v (v) 0 c 0 collector current i (a) 10 dc current gain h fe 0.01 collector current i (a) c h - i 1.0 2.0 3.0 4.0 5.0 6.0 1.0 2.0 3.0 4.0 5.0 common emitter tc=25 c 300 250 200 150 100 50 0 i =20ma b ce(sat) c voltage v (v) 1310 0.03 0.05 0.1 0.3 0.5 1 2 common emitter i /i =10 c b tc=75 c tc=25 c tc=-25 c fe c 0.03 0.1 0.3 1 3 10 30 50 100 300 500 common emitter v =5v ce tc=75 c tc=25 c tc=-25 c p (w) c 100 300 0.3 0.5 1 3 5 10 20 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c * c i max. (continuous) 1m s 10m s 100 m s 1s * * * * * dc op e ra tion t c= 25 c v max. ceo 0 0 25 50 75 100 125 150 10 20 30 40 50 tc=ta inifinite heat sink
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