hexfet ? power mosfet v dss = 75v i d25 = 75a r ds(on) = 13.0 m z dynamic dv/dt rating z 175c operating temperature z fast switching z ease of paralleling z simple drive requirements description third generation hexfets from internat ional rectifier provide the designer with the best combination of fast swit ching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. the low thermal resistance and low package cost of the to-220 contribute to its pin1?gate pin2?drain pin3?source wide acceptance throughout the industry. absolute maximum ratings parameter max. units i d @t c =25c continuous drain current, v gs @10v 75 i d @t c =100c continuous drain current, v gs @10v 60 i dm pulsed drain current 300 a p d @t c =25c power dissipation 200 w linear derating factor 1.5 w/c v gs gate-to-source voltage 20 v e ar single pulse avalanche energy 23 mj dv/dt peak diode recovery dv/dt 5.9 v/ns t j t stg operating junction and storage temperature range C 55 to +175 soldering temperature, for 10 seconds 300(1.6mm from case) ? c mounting torque,6-32 or m3 screw 10 ibf . in(1.1n . m) thermal resistance parameter min. typ. max. units r jc junction-to-case 0.65 r cs case-to-sink, flat, greased surface 0.50 r ja junction-to-ambient 62 ? c /w 1 e 75n075
hexfet ? power mosfet electrical characteristics @t j =25 ? c (unless otherwise specified) parameter min. typ. max. units test conditions v (br)dss drain-to-source breakdown voltage 75 v v gs =0v,i d = 250ua v (br)dss / t j breakdown voltage temp. coefficient 0.074 v/c reference to 25c,i d =1ma r ds(on) static drain-to-source on-resistance 13.0 m v gs =10v,i d =40a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs , i d =250 a g fs forward transconductance 20 s v ds =25v,i d =40a 25 v ds =75v,v gs =0v i dss drain-to-source leakage current 250 a v ds =60v,v gs =0v,t j =150c gate-to-source forward leakage 100 v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v q g total gate charge 160 q gs gate-to-source charge 29 q gd gate-to-drain ("miller") charge 55 nc i d =40a v ds =60v v gs =10v see fig.6 and 13 t d(on) turn-on delay time 13 t r rise time 64 t d(off) turn-off delay time 49 t f fall time 48 ns v dd =38v i d =40a r g =2.5 v gs =10v see figure 10 l d internal drain inductance 4.5 l s internal source inductance 7.5 nh between lead, 6mm(0.25in.) from package and center of die contact c iss input capacitance 3820 c oss output capacitance 610 c rss reverse transfer capacitance 130 pf v gs =0v v ds =25v f =1.0mh z see figure 5 source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) 75 i sm pulsed source current . (body diode) 300 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v t j =25c,i s =40a,v gs =0v t rr reverse recovery time 100 150 ns q rr reverse recovery charge 410 610 nc t j =25c,i f =40a di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + l d ) notes: 2 starting t j = 25c, l = 370mh, r g = 25 , i as = 40a, v gs =10v (see figure 12) i sd 40a, di/dt 300a/ s, v dd v (br)dss ,t j 175c pulse width 400 s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) e 7 5n075
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