1 si pin photodiode cob type, applicable to lead-free solder re ow s12158-01ct www.hamamatsu.com absolute maximum ratings structure electrical and optical characterisitcs (ta=25 c) parameter symbol condition value unit reverse voltage v r max ta=25 c 20 v operating temperature topr -25 to +85 c storage temperature tstg -40 to +100 c re ow soldering conditions * 1 tsol peak temperature 260 c, 2 times (see page 4) - note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. * 1: jedec level 4 parameter speci cation unit photosensitive area 2.77 2.77 mm package glass epoxy - seal material epoxy resin - applicable to lead-free solder re ow cob type, small and thin leadless package photosensitive area: 2.77 2.77 mm high sensitivity: 0.7 a/w ( =960 nm) the s12158-01ct is a si pin photodiode for visible to near infrared range and is compatible with lead-free solder re ow pro- cesses. the small and thin leadless package allows reducing the mount area on a printed circuit board. fso (free space optics) optical switches laser radar, etc. features applications parameter symbol condition min. typ. max. unit spectral response range - 320 to 1100 - nm peak sensitivity wavelength p - 960 - nm photosensitivity s = p 0.6 0.7 - a/w dark current i d v r =12 v - 0.1 10 na temperature coef cient of i d t cid v r =12 v - 1.15 - times/c cutoff frequency fc v r =12 v, r l =50 -3 db 10 25 - mhz terminal capacitance ct v r =12 v, f=1 mhz - 15 30 pf
2 si pin photodiode s12158-01ct spectral response terminal capacitance vs. reverse voltage dark current vs. ambient temperature dark current vs. reverse voltage wavelength (nm) (typ. ta=25 c) photosensitivity (a/w) 600 200 800 400 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1000 1200 qe=100% reverse voltage (v) terminal capacitance 0.1 1 10 1 pf 10 pf 100 pf 1 nf 100 (typ. ta=25 c) ambient temperature (c) (typ. ta=25 c, v r =12 v) dark current 10 20 40 60 -30 -20 30 -10 0 100 fa 10 a 1 a 100 na 100 pa 10 pa 1 pa 10 na 1 na 50 70 80 90 reverse voltage (v) dark current 0.01 0.1 1 10 1 pa 10 pa 100 pa 10 na 1 na 100 (typ. ta=25 c) kpinb0380ea kpinb0382ea kpinb0384ea kpinb0381ea
3 si pin photodiode s12158-01ct dimensional outline (unit: mm) product orientation on reel 0.25 4.2 * (0.5) 1.12 0.2 0.3 (1.1) 2.0 0.3 0.45 0.7 photosensitive area (2.77 2.77) photosensitive surface center of photosensitive area index mark 4.2 * 0.3 2.7 0.75 tolerance unless otherwise noted: 0.1, 2 chip position accuracy with respect to package dimensions marked * x, y?0.2, ?2 standard packing state: reel (2000 pcs/reel) anode (common) cathode (common) kpina0113ea kpinc0020ea directivity relative sensitivity (%) 100 0 20 40 60 80 20 90 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 40 60 80 100 (typ. ta=25 c, light source: tungsten lamp) x, y direction x direction y direction reel feed direction index mark kpinb0383ea
4 cat. no. kpin1084e01 oct. 2012 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice du e to improvements or other reasons. before assembly into fi nal products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of october, 2012. si pin photodiode s12158-01ct recommended land pattern (unit: mm) kpinc0019ea recommended temperature pro le of re ow soldering (typical example) kpinb0385ea preheating 60 to 120 s heating 20 to 40 s 190 c time te m p e ra t u re 260 c max. 230 c min. 170 c 0.9 1.0 1.0 3.85 1.35 after unpacking, store this device in an environment at a temperature of 5 to 30 c and a humidity below 70%, and perform re ow soldering on this device within 72 hours. the effect that the product receives during re ow soldering varies depending on the circuit board and re ow oven that are used. before actual cleaning, check for any problems by testing out the cleaning methods in advance. a sudden temperature rise and cooling m ay be the cause of trouble, so make sure that the temperature change is within 4 c per second.
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