unisonic technologies co., ltd. pzt5401 pnp epitaxial si licon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd. qw-r207-013.b high voltage switching transistor ? features * high collector-emitter voltage: v ceo =-150v * high current gain ? applications * telephone switching circuit * amplifier ? ordering information ordering number package pin assignment packing lead free halogen-free 1 2 3 pzt5401l-x-aa3-r PZT5401G-X-AA3-R sot-223 b c e tape reel note: pin assignment: b: base c: collector e: emitter
pzt5401 pnp epitaxial si licon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r207-013.b ? absoluate maxium ratings (t a = 25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v dc collector current i c -600 ma power dissipation p d 2 w junction temperature t j +150 storage temperature t stg -40 ~ +150 ? electrical characteristics (t a = 25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =100 a, i e =0 -160 v collector-emitter breakdown voltage v ceo i c =1ma, i b =0 -150 v emitter-base breakdown voltage v ebo i e =10 a, i c =0 -5 v collector cut-off current i cbo v cb =120v, i e =0 -50 na emitter cut-off current i ebo v be =-3v, i c =0 -50 na dc current gain(note) h fe v ce =-5v, i c =-1ma v ce =-5v, i c =-10ma v ce =-5v, i c =-50ma 80 80 80 400 collector-emitter satu ration voltage v ce(sat) i c =-10ma, i b =-1ma i c =-50ma, i b =-5ma -0.2 -0.5 v base-emitter satura tion voltage v be(sat) i c =-10ma, i b =-1ma i c =-50ma, i b =-5ma -1 -1 v current gain bandwidth product f t v ce =-10v, i c =-10ma, f=100mhz 100 400 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 6.0 pf noise figure n f i c =-0.25ma, v ce =-5v r s =1k , f=10hz ~ 15.7khz 8 db note: pulse test: p w <300 s, duty cycle<2% ? classification of hfe rank a b c range 80-170 150-240 200-400
pzt5401 pnp epitaxial si licon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r207-013.b ? typical characterics fig.2 dc current gain ic,collector current (ma) hfe, dc current gain 10 2 10 1 10 0 10 3 3 2 1 0 -1 v ce =-5v fig.3 base-emitter on voltage 0 1 2 ic,collector current (ma) base-emitter voltage (v) 0 -0.2 -0.4 -0.6 -0.8 -1.0 v ce =-5v ic,collector current (ma) 3 2 1 0 -1 saturation voltage (v) fig.4 saturation voltage fig.5 current gain-bandwidth product fig.1 collector output capacitance v ce (sat) v be (sat) ic=10*i b ic,collector current (ma) 012 3 current gain-bandwidth product, f t (mhz) 0 1 2 v ce =-10v collector-base voltage (v) cob,capacitance (pf) 3 012 0 2 4 6 8 10 f=1mhz i e =0 3 1 0 -1 -2 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 10 10 10 10 -10 -10 -10 -10
pzt5401 pnp epitaxial si licon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r207-013.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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