fjp3307d ? high voltage fast switching npn power transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com fjp3307d rev. a 1 july 2008 fjp3307d high voltage fast switching npn power transistor features ? built-in diode between collector and emitter ? suitable for electronic ballast and switch mode power supplies absolute maximum ratings * pulse test: pw = 300ms, duty cycle = 2% pulsed electrical characteristics t c = 25c unless otherwise noted symbol parameter value units v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current (dc) 8 a i cp * collector current (pulse) 16 a i b base current (dc) 4 a p c collector dissipation (t c = 25 c) 80 w t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter conditions min. typ. max units bv cbo collector-base breakdown voltage i c = 500 a, i e = 0 700 v bv ceo collector-emitter breakdown voltage i c = 5ma, i b = 0 400 v bv ebo emitter-base breakdown voltage i e = 500 a, i c = 0 9 v i ebo emitter cut-off current v eb = 9v, i c = 0 1 ma h fe1 h fe2 dc current gain v ce = 5v, i c = 2a v ce = 5v, i c = 5a 8 5 40 30 v ce(sat) collector-emitter saturation voltage i c = 2a, i b = 0.4a 1 v i c = 5a, i b = 1a 2 v i c = 8a, i b = 2a 3 v to-220 1.base 2.collect or 3.emitter 1 internal schematic diagram b e c
fjp3307d ? high voltage fast switching npn power transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com fjp3307d rev. a 2 * pulse test: pw = 300 s, duty cycl e = 2% h fe classification v be(sat) base-emitter saturation voltage i c = 2a, i b = 0.4a 1.2 v i c = 5a, i b = 1a 1.6 v v f diode forward voltage i c = 3a 2.5 v c ob output capatitance v cb = 10v, i e = 0, f = 1mhz 60 pf t stg storage time v cc = 125v, i c = 5a i b1 = -i b2 = 1a, r l = 50 3 s t f fall time 0.7 s t stg storage time v cc = 30v, i c = 5a, l=200 h i b1 =1a, r bb = 0 , v be(off) = -5v v clamp = 250v 2.3 s t f fall time 150 ns classification h1 h2 h fe1 15 ~ 28 26 ~ 39 symbol parameter conditions min. typ. max units
fjp3307d ? high voltage fast switching npn power transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com fjp3307d rev. a 3 typical characteristics figure 1. static characterstic figure 2. dc current gain (h1 grade) figure 3. dc current gain (h2 grade) figure 4. collector-emitter saturation voltage figure 5. base-emitter saturation voltage figure 6. output capacitance 012345678910 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i b =300ma i b =100ma i c [a], collector current v ce [v], collector-emitter voltage i b =50ma 0.1 1 10 1 10 100 t c = 125 o c t c = 75 o c t c = 25 o c h fe , dc current gain i c [a], collector current t c = - 25 o c v ce = 5v 0.1 1 10 1 10 100 v ce = 5v h fe , dc current gain i c [a], collector current t c = 125 o c t c = 75 o c t c = 25 o c t c = - 25 o c 0.01 0.1 1 10 0.01 0.1 1 10 v ce (sat),[v] saturation voltage i c [a], collector current i c = 5 i b t c = 125 o c t c = 75 o c t c = 25 o c t c = - 25 o c 0.01 0.1 1 10 0.1 1 10 i c = 5 i b v be (sat)[v], saturation voltage i c [a], collector current t c = 125 o c t c = 75 o c t c = 25 o c t c = - 25 o c 1 10 100 10 100 1000 c ob [pf], output capacitance v cb [v], collector-base voltage f = 1mhz, i e = 0
fjp3307d ? high voltage fast switching npn power transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com fjp3307d rev. a 4 typical characteristics (continued) figure 7. power derating figure 8. reverse biased safe operating area figure 9. forward biased safe operating area 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 p c [w}, collector power dissipation t c [ o c], case temperature 10 100 1000 0.1 1 10 100 i c [a], collector current v ce [v], collector-emitter voltage v cc = 50v, i b1 = - i b2 = 1a l = 1mh 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s i c (max), pulse i c [a], collector curremt v ce [v], collector-emitter voltage t c = 25 o c single pulse i c (max), dc 1ms
fjp3307d ? high voltage fast switching npn power transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com fjp3307d rev. a 5 mechanical dimensions to220
fjp3307d high voltage fast sw itching npn power transistor fjp3307d ? 2008 fairchild semiconductor corporation www.fairchildsemi.com fjp3307d rev. a 6
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