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AON3611 30v complementary mosfet n-channel p-channel v ds (v) = 30v v ds (v) = -30v i d = 5a i d = -6a (v gs = 10v) r ds(on) < 50m w r ds(on) < 38m w (v gs = 10v) r ds(on) < 70m w r ds(on) < 62m w (v gs = 4.5v) symbol v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted max p-channel max n-channel 30 drain-source voltage -30 the AON3611 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. g1 d1 s1 g2 d2 s2 n-channel p-channel top view g1 s1 g2 s2 d1 d1 d2 d2 v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl symbol t 10s steady-state steady-state r q jl maximum junction-to-lead 38 46 c/w a max units maximum junction-to-ambient a r q ja 40 50 c/w maximum junction-to-ambient a d 70 85 c/w 20 thermal characteristics: p-channel junction and storage temperature range -55 to 150 50 80 60 parameter typ max maximum junction-to-ambient a parameter typ c thermal characteristics: n-channel units c/w r q ja -55 to 150 v 30 drain-source voltage -30 t a =25c t a =70c pulsed drain current c continuous drain current v gate-source voltage 20 i d -6 20 5 -4.7 -30 3.8 power dissipation b t a =25c p d 2.1 c/w c/w maximum junction-to-ambient a d 48 98 58 maximum junction-to-lead 2.5 w t a =70c 1.3 1.6 general description features www.freescale.net.cn 1 / 9
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 20 a 40 50 t j =125c 64 80 53 70 m w g fs 11 s v sd 0.79 1 v i s 1.5 a c iss 170 pf c oss 35 pf c rss 23 pf r g 1.7 3.5 5.3 w q g (10v) 4.05 10 nc q g (4.5v) 2 6 nc q gs 0.55 nc q gd 1 nc t d(on) 4.5 ns t 1.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =3 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =5a gate source charge gate drain charge total gate charge static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =5a v gs =4.5v, i d =3a n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =5a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters v ds =v gs , i d =250 m a v ds =0v, v gs =20v gate-body leakage current forward transconductance diode forward voltage r ds(on) t r 1.5 ns t d(off) 18.5 ns t f 15.5 ns t rr 7.5 ns q rr 2.5 nc body diode reverse recovery charge i f =5a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =3 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =5a, di/dt=100a/ m s a. the value of r qja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r qja is the sum of the thermal impedance from junction t o lead r qjl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. AON3611 30v complementary mosfet www.freescale.net.cn 2 / 9 n-channel typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 20 40 60 80 0 2 4 6 8 10 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =3a v gs =10v i d =5a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 4.5v 10v 4v 3.5v 2.1 2.5 1.3 1.6 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 20 40 60 80 100 120 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =5a 25 c 125 c AON3611 30v complementary mosfet www.freescale.net.cn 3 / 9 n-channel typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =5a 1 10 100 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 10s 100ms 2.1 2.5 1.3 1.6 ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =98 c/w AON3611 30v complementary mosfet www.freescale.net.cn 4 / 9 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ar AON3611 30v complementary mosfet www.freescale.net.cn 5 / 9 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.4 -1.9 -2.4 v i d(on) -30 a 30 38 t j =125c 45 57 46 62 m w g fs 13 s v sd -0.76 -1 v i s -2 a c iss 520 pf c oss 100 pf c rss 65 pf r g 7.5 11.5 w q g (10v) 9.2 20 nc q g (4.5v) 4.6 10 nc q gs 1.6 nc q gd 2.2 nc t d(on) 7.5 ns t 5.5 ns m w on state drain current p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-6a r ds(on) i dss m a v ds =v gs , i d =-250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current v gs =-4.5v, i d =-4a forward transconductance diode forward voltage v =-10v, v =-15v, r =2.5 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz static drain-source on-resistance i s =-1a,v gs =0v v ds =-5v, i d =-6a switching parameters maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =-10v, v ds =-15v, i d =-6a gate source charge gate drain charge total gate charge t r 5.5 ns t d(off) 19 ns t f 7 ns t rr 11 ns q rr 5.3 nc v gs =-10v, v ds =-15v, r l =2.5 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =-6a, di/dt=100a/ m s turn-off delaytime i f =-6a, di/dt=100a/ m s body diode reverse recovery time turn-on rise time a. the value of r qja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r qja is the sum of the thermal impedance from junction t o lead r qjl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. AON3611 30v complementary mosfet www.freescale.net.cn 6 / 9 p-channel typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 30 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-4a v gs =-10v i d =-6a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 20 25 30 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -4v - 5v - 8v -10v -4.5v 2.1 2.5 1.3 1.6 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 20 40 60 80 100 120 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-6a 25 c 125 c AON3611 30v complementary mosfet www.freescale.net.cn 7 / 9 p-channel typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-6a 1 10 100 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms 10s 2.1 2.5 1.3 1.6 ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =85 c/w AON3611 30v complementary mosfet www.freescale.net.cn 8 / 9 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v v d c d u t v d d v g s v d s v g s r l r g r e s is tiv e s w itc h in g t e s t c irc u it & w a v e fo rm s - + v g s v d s t t t t t t 9 0 % 1 0 % r o n d (o ff) f o ff d (o n ) id vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss ig v gs - + v d c d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt r m rr v dd v dd q = - idt t rr -isd -vds f -i -i vdd vgs vgs rg dut vdc vgs id vgs - + bv dss i ar AON3611 30v complementary mosfet www.freescale.net.cn 9 / 9 |
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