fqd17p06 / fqu17p06 ?2009 fairchild semiconductor corporation rev. a3.january 2009 fqd17p06 / fqu17p06 60v p-channel mosfet general description these p-channel enhancement mode power field effect transistors are produced using fairchild?s propriet ary, planar stripe, dmos technology. this advanced technology has been especially tailor ed to minimize on-state resistance, provide superior swit ching performance, and withstand a high energy pulse in t he avalanche and commutation modes. these devices are well suited for low voltage applications such as au tomotive, dc/dc converters, and high efficiency switching for power management in portable and battery operated product s. features ? -12a, -60v, r ds(on) = 0.135 @v gs = -10 v ? low gate charge ( typical 21 nc) ? low crss ( typical 80 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter fqd17p06 / fqu17p06 units v dss drain-source voltage -60 v i d drain current - continuous (t c = 25c) -12 a - continuous (t c = 100c) -7.6 a i dm drain current - pulsed (note 1) -48 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 300 mj i ar avalanche current (note 1) -12 a e ar repetitive avalanche energy (note 1) 4.4 mj dv/dt peak diode recovery dv/dt (note 3) -7.0 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 44 w - derate above 25c 0.35 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 2.85 c / w r ja thermal resistance, junction-to-ambient * -- 50 c / w r ja thermal resistance, junction-to-ambient -- 110 c / w * when mounted on the minimum pad size recommended (pcb mount) i-pak fqu series d-pak fqd series g s d g s d ! !! ! ! !! ! ! !! ! " "" " # ## # ! !! ! ! !! ! ! !! ! ! !! ! ! !! ! ! !! ! " "" " # ## # ! !! ! ! !! ! ! !! ! s d g january 200 9 qfet ? ? rohs c ompliant
fqd17p06 / fqu17p06 rev. a3.january 2009 ?2009 fairchild semiconductor corporation elerical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maxim um junction temperature 2. l = 2.4mh, i as = -12a, v dd = -25v, r g = 25 , starting t j = 25c 3. i sd ! -17a, di/dt ! 300a/ s, v dd ! bv dss, starting t j = 25c 4. pulse test : pulse width ! 300 s, duty cycle ! 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.06 -- v/c i dss zero gate voltage drain current v ds = -60 v, v gs = 0 v -- -- -1 a v ds = -48 v, t c = 125c -- -- -10 a i gssf gate-body leakage current, forward v gs = -25 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 25 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -6.0 a -- 0.11 0.135 g fs forward transconductance v ds = -30 v, i d = -6.0 a -- 8.7 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 690 900 pf c oss output capacitance -- 325 420 pf c rss reverse transfer capacitance -- 80 105 pf switching characteristics t d(on) turn-on delay time v dd = -30 v, i d = -8.5 a, r g = 25 -- 13 35 ns t r turn-on rise time -- 100 210 ns t d(off) turn-off delay time -- 22 55 ns t f turn-off fall time -- 60 130 ns q g total gate charge v ds = -48 v, i d = -17 a, v gs = -10 v -- 21 27 nc q gs gate-source charge -- 4.2 -- nc q gd gate-drain charge -- 10 -- nc drain-source diode characteristics and maximum rati ngs i s maximum continuous drain-source diode forward curre nt -- -- -12 a i sm maximum pulsed drain-source diode forward current -- -- -48 a v sd drain-source diode forward voltage v gs = 0 v, i s = -12 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -17 a, di f / dt = 100 a/ s -- 92 -- ns q rr reverse recovery charge -- 0.32 -- c (note 4) (note 4, 5) (note 4, 5) (note 4)
fqd17p06 / fqu17p06 ?2009 fairchild semiconductor corporation rev. a3. januaary 2009 0 10 20 30 40 50 60 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 0.36 0.40 $ note : t j = 25 % v gs = - 20v v gs = - 10v r ds(on) [ ], drain-source on-resistance -i d , drain current [a] 10 -1 10 0 10 1 10 0 10 1 v gs top : - 15.0 v - 10.0 v - 8.0 v - 7.0 v - 6.0 v - 5.5 v - 5.0 v bottom : - 4.5 v $ notes : 1. 250 & s pulse test 2. t c = 25 % -i d , drain current [a] -v ds , drain-source voltage [v] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 v ds = -30v v ds = -48v $ note : i d = -17 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd $ notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 -1 10 0 10 1 150 % $ notes : 1. v gs = 0v 2. 250 & s pulse test 25 % -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 2 4 6 8 10 10 -1 10 0 10 1 150 % 25 % -55 % $ notes : 1. v ds = -30v 2. 250 & s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
fqd17p06 / fqu17p06 ?2009 fairchild semiconductor corporation rev. a3. january 2009 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 - 2 1 0 - 1 1 0 0 $ n o te s : 1 . z ' j c ( t) = 2 .8 5 % / w m a x . 2 . d u ty f a c to r , d = t 1 /t 2 3 . t j m - t c = p d m * z ' j c ( t) s i n g le p u ls e d = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 z ' j c ( t) , t h e r m a l r e s p o n s e t 1 , s q u a r e w a v e p u ls e d u r a t io n [ s e c ] 25 50 75 100 125 150 0 2 4 6 8 10 12 -i d , drain current [a] t c , case temperature [ % ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) $ notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse -i d , drain current [a] -v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 $ notes : 1. v gs = -10 v 2. i d = -6.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 $ notes : 1. v gs = 0 v 2. i d = -250 & a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. max imum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2
fqd17p06 / fqu17p06 ?2009 fairchild semiconductor corporation rev. a3. january 2009 charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k ( 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k ( 200nf 12v same type as dut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs e as = l i as 2 ---- 2 1 -------------------- bv dss - v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as = l i as 2 ---- 2 1 e as = l i as 2 ---- 2 1 ---- 2 1 -------------------- bv dss - v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
fqd17p06 / fqu17p06 ?2009 fairchild semiconductor corporation rev. a3. january 2009 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
package dimensions fqd17p06 / fqu17p06 ?2009 fairchild semiconductor corporation rev. a3.january 2009 d-pak
fqd17p06 / fqu17p06 ?2009 fairchild semiconductor corporation rev. a3.january 2009 package dimensions (continued) 6.60 0.20 0.76 0.10 max0.96 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] 0.60 0.20 0.80 0.10 1.80 0.20 9.30 0.30 16.10 0.30 6.10 0.20 0.70 0.20 5.34 0.20 0.50 0.10 0.50 0.10 2.30 0.20 (0.50) (0.50) (4.34) ipak
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saving our world, 1mw/w/kw at a time? signalwise ? smartmax ? smart start ? solutions for your success ? spm ? stealth ? superfet ? supersot ? -3 supersot ? -6 supersot ? -8 supremos ? syncfet ? sync-lock? ? * the power franchise ? tinyboost ? tinybuck ? tinycalc ? tinylogic ? tinyopto ? tinypower ? tinypwm ? tinywire ? transic ? trifault detect ? truecurrent ? * ? serdes ? uhc ? ultra frfet ? unifet ? vcx ? visualmax ? voltageplus ? xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the appli cation or use of any product or circuit described herein; neither does it convey any license under its patent ri ghts, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any com ponent of a life s upport, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in t he industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselv es and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. pr oducts customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild's quality standards for handling and storage and provide access to fa irchild's full range of up-to-date technical and product information. fairchild and ou r authorized distributors will stand behind all warranties and will appropriately addr ess any warranty issues that may arise. fairchild will not provide any warranty coverage or other assist ance for parts bought from unauthorized sources. fairchild is c ommitted to combat this global problem and encourage our customers to do their part in stopping th is practice by buying direct or from authorized distributors . product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications fo r product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for refe rence information only. rev. i61
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