bfx89 ? bfy90 25/10/2012 comset semiconductors 1/4 wide band vhf/uhf amplifier the bfx89 and bfy90 are silicon planar epitaxial npn transistors produced using interdigitated base emitter geometry. they are particulary designed for use in wide band common-emitter linear amplifiers up to 1 ghz. they feature very high f t , low reverse capacitance, excellent cross modulation prope rties and very low noise performance. the bfy90 is complementary to the bfr99a. typical applications include telecommunication and radio communication equipment. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage ( ib = 0) 15 v v cer collector-emitter voltage ( rbe 50 ? ) 30 v v cbo collector-base voltage ( ie= 0) 30 v v ebo collector-base voltage ( ic = 0) 2.5 v i c collector current 25 ma i cm collector peak current 50 ma p tot total power dissipation at tamb 25 c 200 mw t stg, tj storage and junction temperature -65 to 200 c description : ? silicon planar epitaxial transistors ? to-72 metal case ? very low noise applications : ? telecommunications ? wide band uhf amplifier ? radio communications www.datasheet.net/ datasheet pdf - http://www..co.kr/
bfx89 ? bfy90 25/10/2012 comset semiconductors 2/4 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction ? case max 580 c/w r thj- thermal resistance, junction ? ambient max 880 c/w electrical characteristics tamb = 25 c unless otherwise specified symbol ratings test condition(s) min typ max unit i cbo collector cutoff current (i e =0) v cb = 15v - - 10 na v cek * collector-emitter knee voltage i c = 20ma - - 0.75 v f t transition frequency v ce = 5v f = 500mhz i c =2 ma bfx89 - 1 - ghz bfy90 1 1.1 - v ce = 5v f = 500mhz i c =25 ma bfx89 - 1.2 - bfy90 1.3 1.4 - h fe dc current gain i c = 2ma v ce = 1 v bfx89 20 - 150 - bfy90 25 - 150 i c = 25ma v ce = 1 v bfx89 20 - 125 bfy90 25 - 125 c cbo (1) collector-base capacitance i e =0 v cb = 10v f= 1mhz v ce = 5 bfx89 - - 1.7 pf bfy90 - - 1.5 c re(2) reverse capacitance i c = 2mav f = 1mhz bfx89 - 0.6 - pf bfy90 - 0.6 0.8 www.datasheet.net/ datasheet pdf - http://www..co.kr/
bfx89 ? bfy90 25/10/2012 comset semiconductors 3/4 electrical characteristics tamb = 25 c unless otherwise specified symbol ratings test condition(s) min typ mx unit nf(2) noise figure i c = 2ma , v ce = 5 v f = 100khz rg = optimized bfy90 only - - 4 db i c = 2ma , v ce = 5 v f= 200 mhz rg = optimized bfx89 - 3.3 4 bfy90 - 2.5 3.5 i c = 2ma , v ce = 5 v f = 500 mhz rg = 50 ? bfx89 - - 6.5 bfy90 - - 5 i c = 2ma , v ce = 5 v f = 800 mhz rg = optimized bfx89 - 7 - bfy90 - 5.5 - gpe (2) power gain ( not neutralized) for bfx89 i c = 8ma v ce = 10 v f=200 mhz 19 22 - db f=800 mhz - 7 - for bfy90 i c = 14ma v ce = 10 v f=200 mhz 21 23 - f=800 mhz - 8 - po output power for bfx89 i c =8ma v ce = 10 v d im = -30 db (3) channel 9 - 6 - mw (4) channel 62 - 6 for bfy90 i c =14ma v ce = 10 v d im = -30 db (3) channel 9 10 12 - (4) channel 62 - 12 - * i b = value for which i c = 22 ma at v ce = 1v (1) shield lead not grounded (3) f p = 202mh z, f q = 205 mh z, f (2q-p) = 208mh z (2) shield lead grounded (4) f p = 798mh z, f q = 802 mh z, f (2q-p) = 806mh z www.datasheet.net/ datasheet pdf - http://www..co.kr/
bfx89 ? bfy90 25/10/2012 comset semiconductors 4/4 mechanical data case to-72 revised august 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semic onductors assumes no responsibility for the consequences of use of such information nor for any infr ingement of patents or other rights of th ird parties which may results from its use. data are subject to change without notice. comset semiconductors makes no warranty, representation or guarantee regar ding the suitability of its pr oducts for any particular purpose, nor does comset semiconductors assume any li ability arising out of the application or use of any product an d specifically disclaims any and all liability, including without limitation co nsequential or incidental damages. comset semiconductors? produ cts are not authorized for use as critical compone nts in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions mm min max a 5.31 5.84 b 4.45 4.95 c - 0.76 d 4.32 5.33 e 12.7 - f 0.41 0.48 g 2.54 h 1.27 j 0.91 1.17 k 0.71 1.22 pin 1 : emitter pin 2 : base pin 3 : collector pin 4 : case www.datasheet.net/ datasheet pdf - http://www..co.kr/
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