1 UD4014 n-ch 40v fast switching mosfets symbol parameter rating units v ds drain-source voltage 40 v v gs gate-sou r ce voltage 20 v i d @t c =25 continuous drain current, v gs @ 10v 1 33 a i d @t c =100 continuous drain current, v gs @ 10v 1 21 a i d @t a =25 continuous drain current, v gs @ 10v 1 8.4 a i d @t a =70 continuous drain current, v gs @ 10v 1 6.7 a i dm pulsed drain current 2 80 a eas single pulse avalanche energy 3 55 mj i as avalanche current 25 a p d @t c =25 total power dissipation 4 31.3 w p d @t a =25 total power dissipation 4 2 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient (steady state) 1 --- 62 /w r jc thermal resistance junction-case 1 --- 4 /w id 40v 17m ? 33a the UD4014 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD4014 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data to252 pin configuration product summery bv dss r ds(on) g g s s
2 n-ch 40v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 40 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.032 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =15a --- 14 17 m v gs =4.5v , i d =10a --- 18 22 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.0 1.5 2.5 v v gs(th) v gs(th) temperature coefficient --- -4.8 --- mv/ i dss drain-source leakage current v ds =32v , v gs =0v , t j =25 --- --- 1 ua v ds =32v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =15a --- 34 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.1 4.2 q g total gate charge (4.5v) v ds =32v , v gs =4.5v , i d =15a --- 10 14 nc q gs gate-source charge --- 2.55 3.6 q gd gate-drain charge --- 4.8 6.7 t d(on) turn-on delay time v dd =20v , v gs =10v , r g =3.3 i d =15a --- 2.8 5.6 ns t r rise time --- 12.8 23 t d(off) turn-off delay time --- 21.2 42 t f fall time --- 6.4 12.8 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 1013 1418 pf c oss output capacitance --- 107 150 c rss reverse transfer capacitance --- 76 106 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =15a 20 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 33 a i sm pulsed source current 2,6 --- --- 80 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =15a , di/dt=100a/s , t j =25 --- 10 --- ns q rr reverse recovery charge --- 3.1 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =25a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD4014
3 n-ch 40v fast switching mosfets 0 4 8 12 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UD4014
4 n-ch 40v fast switching mosfets 10 100 1000 10000 1 5 9 13172125 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r jc ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t 0.02 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UD4014
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