april 2011 ?2011 fairchild semiconductor corporation FDMS86520L rev.c www.fairchildsemi.com 1 FDMS86520L n-channel powertrench ? mosfet FDMS86520L n-channel powertrench ? mosfet 60 v, 22 a, 8.2 m features ? max r ds(on) = 8.2 m at v gs = 10 v, i d = 13.5 a ? max r ds(on) = 11.7 m at v gs = 4.5 v, i d = 11.5 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? msl1 robust package design ? 100% uil tested ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall efficien cy and to minimize switch node ringing of dc/dc converters using either synchronous or conventional switching pwm c ontrollers.it has been optimized for low gate charge, low r ds(on) , fast switching speed and body diode reverse recovery performance. applications ? primary switch in isolated dc-dc ? synchronous rectifier ? load switch power 56 d d d d g s s s pin 1 bottom top g s s s d d d d 5 6 7 8 3 2 1 4 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 60 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 22 a -continuous (silicon limited) t c = 25 c 71 -continuous t a = 25 c (note 1a) 13.5 -pulsed 60 e as single pulse avalanche energy (note 3) 91 mj p d power dissipation t c = 25 c 69 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.8 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS86520L FDMS86520L power 56 13 ?? 12 mm 3000 units
www.fairchildsemi.com 2 ?2011 fairchild semiconductor corporation FDMS86520L rev.c FDMS86520L n-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v60 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 29 mv/c i dss zero gate voltage drain current v ds = 48 v, v gs = 0 v1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a11.83v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -7 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 13.5 a 6.78.2 m v gs = 4.5 v, i d = 11.5 a 9.1 11.7 v gs = 10 v, i d = 13.5 a, t j = 125 c 9.6 11.8 g fs forward transconductance v ds = 5 v, i d = 13.5 a51s c iss input capacitance v ds = 30 v, v gs = 0 v, f = 1 mhz 3470 4615 pf c oss output capacitance 625 835 pf c rss reverse transfer capacitance 25 45 pf r g gate resistance 0.6 t d(on) turn-on delay time v dd = 30 v, i d = 13.5 a, v gs = 10 v, r gen = 6 15 27 ns t r rise time 5.6 11 ns t d(off) turn-off delay time 32 52 ns t f fall time 3.4 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 30 v, i d = 13.5 a 45 63 nc q g total gate charge v gs = 0 v to 4.5 v2130nc q gs gate to source charge 9.5 nc q gd gate to drain ?miller? charge 4.7 nc v sd source-drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.72 1.2 v v gs = 0 v, i s = 13.5 a (note 2) 0.83 1.3 t rr reverse recovery time i f = 13.5 a, di/dt = 100 a/ s 37 60 ns q rr reverse recovery charge 21 34 nc t rr reverse recovery time i f = 13.5 a, di/dt = 300 a/ s 30 48 ns q rr reverse recovery charge 37 59 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c, l = 1 mh, i as = 13.5 a, v dd = 54 v, v gs = 10 v. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper.
www.fairchildsemi.com 3 ?2011 fairchild semiconductor corporation FDMS86520L rev.c FDMS86520L n-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 v gs = 3 v v gs = 4 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 3.5 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 102030405060 0 1 2 3 4 5 v gs = 4.5 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4 v v gs = 3 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 13.5 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 10 20 30 40 t j = 125 o c i d = 13.5 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 10 20 30 40 50 60 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 ?2011 fairchild semiconductor corporation FDMS86520L rev.c FDMS86520L n-channel powertrench ? mosfet figure 7. 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 i d = 13.5 a v dd = 40 v v dd = 20 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 30 v gate charge characteristics figure 8. 0.1 1 10 60 1 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 20 40 60 80 v gs = 4.5 v limited by package r t jc = 1.8 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100 300 0.01 0.1 1 10 100 1 s 100 p s 10 ms dc 10 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 single pulse r t ja = 125 o c/w t a = 25 o c v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 ?2011 fairchild semiconductor corporation FDMS86520L rev.c FDMS86520L n-channel powertrench ? mosfet figure 13. 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 6 ?2011 fairchild semiconductor corporation FDMS86520L rev.c FDMS86520L n-channel powertrench ? mosfet dimensional outlin e and pad layout
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