inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD864 description high dc current gain- : h fe = 1000(min)@ i c = 1.5a collector-emitter breakdown voltage- : v (br)ceo = 120v(min) low collector-emitter saturation voltage- : v ce(sat) = 1.5v(max)@ i c = 1.5a complement to type 2sb765 applications medium speed and power switching applications. absolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 3 a i cm collector current-peak 6 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD864 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma, r be = 120 v v (br)ebo emitter-base breakdown voltage i e = 50ma , i c = 0 7 v v ce( sat )-1 collector-emitter saturation voltage i c = 1.5a, i b = -3ma 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 3a, i b = -30ma b 3.0 v v be( sat )-1 base-emitter saturation voltage i c = 1.5a, i b = -3ma 2.0 v v be( sat )-2 base-emitter saturation voltage i c = 3a, i b = -30ma b 3.5 v i cbo collector cutoff current v cb = 120v, i e = 0 100 a i ceo collector cutoff current v ce = 100v, r be = 10 a h fe dc current gain i c = 1.5a; v ce = 3v 1000 20000 switching times t on turn-on time 0.5 s t stg storage time 4.5 s t f fall time i c = 1.5a; i b1 = -i b2 = 3ma 1.1 s isc website www.iscsemi.cn
|
