10v drive nch mosfet R8008ANX ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) low input capacitance. 3) high esd. ? application switching ? packaging specifications ? inner circuit package bulk code - basic ordering unit (pieces) 500 R8008ANX ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 800 v gate-source voltage v gss ? 30 v continuous i d ? 8a pulsed i dp ? 32 a continuous i s 8a pulsed i sp 32 a avalanche current i as 4a avalanche energy e as 4.2 mj power dissipation p d 50 w channel temperature t ch 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25c *3 limited only by maximum channel temperature allowed. *4 t c =25c ? thermal resistance symbol limits unit channel to case r th (ch-c) 2.5 ? c / w parameter type source current (body diode) drain current parameter *1 *1 to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 )( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 (1) gate (2) drain (3) source ? 1 body diode *2 *2 *3 *4 *3 (1) (3) (2) ?1 (1) gate (2) drain (3) source 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R8008ANX ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 800 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =800v, v gs =0v gate threshold voltage v gs (th) 3.0 - 5.0 v v ds =10v, i d =1ma forward transfer admittance l y fs l 2.0 - - s v ds =10v, i d =4.0a input capacitance c iss - 1080 - pf v ds =25v output capacitance c oss - 480 - pf v gs =0v reverse transfer capacitance c rss - 32 - pf f=1mhz turn-on delay time t d(on) - 32 - ns v dd 400v, i d =4.0a rise time t r - 50 - ns v gs =10v turn-off delay time t d(off) - 85 - ns r l =100 ? fall time t f - 30 - ns r g =10 ? total gate charge q g - 39 - nc v dd 400v gate-source charge q gs - 8.7 - nc i d =8.0a gate-drain charge q gd - 23 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =8.0a, v gs =0v *pulsed 0.79 1.03 parameter conditions conditions ? parameter static drain-source on-state resistance r ds (on) i d =4.0a, v gs =10v - * * * * * * * * * * 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R8008ANX ? electrical characteristic curves (ta=25 ? c) 0 1 2 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig. 1 typical output characteristics ( ) v gs = 5.5 v v gs = 10.0 v v gs = 7.0 v v gs = 8.0 v v gs = 6.0 v v gs = 6.5 v v gs = 5.0 v t a = 25 c pulsed 0 2 4 6 8 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig. 2 typical output characteristics ( ) v gs = 6.0 v v gs = 10.0 v v gs = 8.0 v v gs = 6.5 v v gs = 7.0 v v gs = 5.5 v t a = 25 c pulsed 0.001 0.01 0.1 1 10 2 3 4 5 6 7 8 drain currnt : i d [a] gate - source voltage : v gs [v] fig. 3 typical transfer characteristics v ds = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 2 3 4 5 6 -50 0 50 100 150 gate threshold voltage : v gs(th) [v] channel temperature : t ch [ ] fig. 4 gate threshold voltage vs. channel temperature v ds = 10 v i d = 1 ma pulsed 0.1 1 10 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [ ] drain current : i d [a] fig. 5 static drain - source on - state resistance vs. drain current v gs = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 static drain - source on - state resistance : r ds(on) [ ] channel temperature : t ch [ ] fig. 6 static drain - source on - state resistance vs. channel temperature v gs = 10 v pulsed i d = 4 a i d = 8 a 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R8008ANX 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig. 7 forward transfer admittance vs. drain current v ds = 10 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0 0.5 1 1.5 source current : i s [a] source - drain voltage : v sd [v] fig. 8 source current vs. source - drain voltage v gs = 0 v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 1 2 3 0 5 10 15 20 static drain - source on - state resistance r ds(on) [ ] gate - source voltage : v gs [v] fig. 9 static drain - source on - state resistance vs. gate - source voltage i d = 8.0 a i d = 4.0 a t a = 25 c pulsed 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R8008ANX ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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