type IPP096N03L g ipb096n03l g opti mos ? 3 power-transistor features ? fast switching mosfet for smps ? optimized technology for dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel, logic level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? avalanche rated ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =10 v, t c =25 c 35 a v gs =10 v, t c =100 c 35 v gs =4.5 v, t c =25 c 35 v gs =4.5 v, t c =100 c 30 pulsed drain current 2) i d,pulse t c =25 c 245 avalanche current, single pulse 3) i as t c =25 c 35 avalanche energy, single pulse e as i d =12 a, r gs =25 ? 40 mj reverse diode d v /d t d v /d t i d =35 a, v ds =24 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage v gs 20 v value 1) j-std20 and jesd22 v ds 30 v r ds(on),max 9.6 m ? i d 35 a product summary type IPP096N03L g ipb096n03l g package pg-to220-3-1 pg-to263-3 marking 096n03l 096n03l rev. 2.0 page 1 2010-04-26
IPP096N03L g ipb096n03l g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25 c 42 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 3.6 k/w smd version, device on pcb r thja minimal footprint - - 62 6 cm2 cooling area 4) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1 - 2.2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na r ds(on) v gs =4.5 v, i d =30 a - 11.3 14.1 m ? v gs =10 v, i d =30 a - 8.0 9.6 gate resistance r g - 1.1 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30 a 26 53 - s 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 5) measured from drain tab to source pin 3) see figure 13 for more detailed information value values 2) see figure 3 for more detailed information drain-source on-state resistance 5) rev. 2.0 page 2 2010-04-26
IPP096N03L g ipb096n03l g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1200 1600 pf output capacitance c oss - 500 660 reverse transfer capacitance c rss -24- turn-on delay time t d(on) - 4.0 - ns rise time t r - 3.2 - turn-off delay time t d(off) -16- fall time t f - 2.6 - gate char g e characteristics 5) gate to source charge q gs - 4.0 - nc gate charge at threshold q g(th) - 1.9 - gate to drain charge q gd - 1.8 - switching charge q sw - 3.9 - gate charge total q g - 7.4 - gate plateau voltage v plateau - 3.4 - v gate charge total q g v dd =15 v, i d =30 a, v gs =0 to 10 v -15- gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v - 6.4 - nc output charge q oss v dd =15 v, v gs =0 v -13- reverse diode diode continuous forward current i s - - 35 a diode pulse current i s,pulse - - 245 diode forward voltage v sd v gs =0 v, i f =30 a, t j =25 c - 0.94 1.2 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 10 nc 6) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =30 a, r g =1.6 ? v dd =15 v, i d =30 a, v gs =0 to 4.5 v rev. 2.0 page 3 2010-04-26
IPP096N03L g ipb096n03l g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 0.01 0.1 1 10 0000001 t p [s] z thjc [k/w] 0 10 20 30 40 50 0 50 100 150 200 t c [c] p tot [w] 0 10 20 30 40 0 50 100 150 200 t c [c] i d [a] rev. 2.0 page 4 2010-04-26
IPP096N03L g ipb096n03l g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 11.5 v 0 4 8 12 16 20 24 0 20406080100 i d [a] r ds(on) [m ? ] 25 c 175 c 0 20 40 60 80 100 012345 v gs [v] i d [a] 0 20 40 60 80 100 0 20406080100 i d [a] g fs [s] 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 0 40 80 120 160 0123 v ds [v] i d [a] rev. 2.0 page 5 2010-04-26
IPP096N03L g ipb096n03l g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 2 4 6 8 10 12 14 16 18 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 102030 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [a] rev. 2.0 page 6 2010-04-26
IPP096N03L g ipb096n03l g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 22 24 26 28 30 32 34 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 10 3 10 2 10 1 10 0 10 -1 1 10 100 t av [s] i av [a] 6 v 15 v 24 v 0 2 4 6 8 10 12 0 5 10 15 20 q gate [nc] v gs [v] rev. 2.0 page 7 2010-04-26
IPP096N03L g ipb096n03l g package outline pg-to220-3-1 footprint: packaging: rev. 2.0 page 8 2010-04-26
IPP096N03L g ipb096n03l g package outline pg-to263-3 rev. 2.0 page 9 2010-04-26
IPP096N03L g ipb096n03l g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. all rights reserved. attention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third p arty. information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies o ffice. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of suc h components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be impl anted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, i t is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.0 page 10 2010-04-26
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