rb886y diodes rev.a 1/2 schottky barrier diode rb886y z applications z dimensions (unit : mm) z land size figure (unit : mm) high frequency detection z features 1) ultra small mold type. (emd4) 2) low ct and high detection efficiency. z construction z structure silicon epitaxial planar z taping specifications (unit : mm) z absolute maximum ratings (ta=25 q c) z electrical characteristics (ta=25 q c) :?::?:? :?:?:? :?:?:?:? :?:?:? :?:?:?:? :w symbol unit v r v i f ma tj =? tstg =? junction temperature storage temperature (*1) rate of per diode limits 15 10 parameter reverse voltage forward current 125 -40 to +125 symbol min. typ. max. unit v f - - 0.35 v i f =1ma i r - - 120 a v r =5v capacitance between terminals ct - 0.53 0.80 pf v r =1.0v , f=1mhz conditions reverse currnt parameter forward voltage ! ! :?:|:?::w:?:w:?::?:? :?:?:?:?:?:w:?:w:a:?:?:?:?:?:w:w:a::?:? :?:?:?:w::e:?:?::w:?:?:?:a:w:?:?:o:?:?::e:? :?:?:?:?:?:?:?:?:? :?:?:?:?:?:?:?:? :?c>:?:?:?
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