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| savantic semiconductor product specification silicon pnp power transistors 2SB1392 d escription with to-220fa package low collector saturation voltage wide area of safe operation applications for low frequency power amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -70 v v ceo collector -emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i cm collector current-peak -8 a t a =25 2.0 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1392 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma;r be = < -60 v v (br)cbo collector-base breakdown voltage i c =-10a; i e =0 -70 v v (br)ebo emitter-base breakdown voltage i e =-10a; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a -1.0 v v besat base-emitter saturation voltage i c =-2a; i b =-0.2a -1.2 v v be base-emitter voltage i c =-1a ; v ce =-4v -1.0 v i cbo collector cut-off current v cb =-50v; i e =0 -10 a i ceo collector cut-off current v ce =-50v; r be = < -10 a h fe-1 dc current gain i c =-1a ; v ce =-4v 60 200 h fe-2 dc current gain i c =-0.1a ; v ce =-4v 35 h fe-1 classifications b c 60-120 100-200 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1392 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
Price & Availability of 2SB1392
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