smd type ic www.kexin.com.cn 1 smd type transistors pnp epitaxial planar silicon transistors 2SA1813 features very small-sized package. adoption of fbet process. high dc current gain (h fe =500 to 1200). low collector-to-emitter saturation voltage (v ce(sat) 0.3v). high v ebo (v ebo 15v). 1 emitter 2 base 3 collector absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -15 v collector current i c -150 ma collector current (pulse) i cp -300 ma base current i b -30 ma collector dissipation p c 200 mw jumction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb = -20v , i e =0 -0.1 a emitter cutoff current i ebo v eb = -10v , i c =0 -0.1 a dc current gain h fe v ce =-5v,i c = -1ma 500 800 1200 gain bandwidth product f t v ce = -10v , i c = -10ma 210 mhz common base output capacitance cob v cb = -10v , f = 1mhz 2.6 pf collector-to-emitter saturation voltage v ce(sat) i c = -50ma , i b =-1ma -0.15 -0.3 mv base-to-emitter saturation voltage v be(sat) i c = -50ma , i b =-1ma -0.78 -1.1 v collector-to-base breakdown voltage v (br)cbo i c = -10a , i e =0 -30 v collector-to-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -25 v emitter-to-base breakdown voltage v (br)ebo i e = -10a , i c =0 -15 v marking marking ks
|
