? 2006 ixys all rights reserved polarhv tm hiperfet power mosfet v dss = 800 v i d25 =13a r ds(on) 420 m t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z international standard package z fast recovery diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = i t (note 1) 420 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c13a i dm t c = 25 c, pulse width limited by t jm 55 a i ar t c = 25 c12a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 2 p d t c = 25 c 208 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.6..27 n/lb weight 5 g g = gate d = drain s = source s g d isoplus247 (ixfr) e153432 (electrically isolated back surface) ds99600e(07/06) ixfr 24n80p isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 24n80p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = i t , pulse test 15 25 s c iss 7200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 470 pf c rss 26 pf t d(on) 32 ns t r v gs = 10 v, v ds = 0.5 v dss, i d = i t 27 ns t d(off) r g =2 (external) 75 ns t f 24 ns q g(on) 105 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 30 nc q gd 33 nc r thjc 0.6 c/w r thcs 0.15 c/w note 1: test current i t = 12 a source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 24 a i sm repetitive 55 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 250 ns q rm v r = 100v, v gs = 0 v 0.8 c i rm 6.0 a isoplus247 (ixfr) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfr 24n80p fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 22 24 0123456789 v ds - volts i d - amperes v gs = 10v 5v 6v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 4. r ds(on) normalized to i d = 12a value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 12a fig. 5. r ds(on) normalized to i d = 12a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 -50-25 0 25 50 75100125150 t j - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 24n80p fig. 7. input admittance 0 4 8 12 16 20 24 28 32 36 40 3 3.5 4 4.5 5 5.5 6 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 4 8 12 16 20 24 28 32 36 0.30.40.50.60.70.80.9 1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v gs - volts v ds = 400v i d = 12a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss ixys ref: f_24n80p (8j) 6-22-06.xls fig. 12. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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