inchange semiconductor isc product specification isc silicon npn power transistor 2SD897 description high breakdown voltage- : v cbo = 1500v (min) high switching speed low collector saturation voltage- : v ce(sat) = 5.0v(max.)@ i c = 1a built-in damper diode applications designed for use in color tv deflection circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 6 v i c collector current- continuous 1.5 a i cm collector current- peak 5.0 a i b b base current- continuous 0.8 a p c collector power dissipation @ t c = 25 50 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD897 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ebo emitter-base breakdown voltage i e = 200ma; i c = 0 6.0 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.2a b 5.0 v v be (sat) base-emitter saturation voltage i c = 1a; i b = 0.2a b 1.5 v i ces collector cutoff current v ce = 1500v; r be = 0 500 a h fe dc current gain i c = 0.5a; v ce = 5v 8 v ecf c-e diode forward voltage i f = 2a 2.5 v f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 3 mhz t f fall time i c = 0.8a, i b1( end) = 0.16a 1.0 s isc website www.iscsemi.cn 2
|
