RBQ10T65A l applications l dimensions (unit : mm) l structure general rectification l features 1)cathode common type. 2)low i r 3)high reliability l construction silicon epitaxial planer symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c symbol min. typ. max. unit v f - - 0.69 v i f =5a i r - - 150 m a v r =65v conditions junction temperature 150 storage temperature - 40 to + 150 parameter limits average rectified forward current (*1) 10 reverse voltage (repetitive) 65 reverse voltage (dc) 65 reverse current forward voltage schottky barrier diode l absolute maximum ratings (tc=25 ? c) l electrical characteristics (tj=25 ? c) forward current surge peak 60hz ? 1cyc 50 (*1) rating of per diode : io/2 parameter rohm : to220fn manufacture date 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 1.2 1.3 0.8 (1) (2) (3) >y>>>?<>>>? fff>>>>y >>>?<>>>t >?>>?<>>>t >y>t>>?<>>>t >t>>??<>>>t fff>>>>y >>>?<>>>? fff>>>>y >>>??<>>>y 0.05 >t>>a?<>>> 13.5min 8.0 >y>>>?<>>> >>>>>f>>>>t
RBQ10T65A 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) ta=125 c ta=25 c ta=150 c ta= - 25 c ta=75 c 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 reverse voltage v r (v) v r - i r characteristics reverse current:i r ( m a) ta= - 25 c ta=75 c ta=150 c ta=125 c ta=25 c 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics 600 610 620 630 640 650 660 670 680 690 700 ave:629.1mv ta=25 c i f =5a n=30pcs v f dispersion map forward voltage:v f (mv) 0 10 20 30 40 50 reverse current:i r ( m a) i r dispersion map ta=25 c v r =65v n=30pcs ave:12.36 m a 350 360 370 380 390 400 410 420 430 440 450 ave:396pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10T65A 0 50 100 150 200 250 300 8.3ms i fsm 1cyc peak surge forward current:i fsm (a) i fsm disresion map ave:130a 0 5 10 15 20 25 30 ave:7.5ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 0 50 100 150 200 250 300 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 0 50 100 150 200 250 300 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 5 10 15 0 5 10 15 20 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics d=1/2 sin( q = 180) dc 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10T65A 0 0.5 1 1.5 2 0 10 20 30 40 50 60 70 reverse power dissipation:p r (w) reverse voltage:v r (v ) v r - p r characteristics sin( q 180) dc d=1/2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 ambient temperature:ta( c ) derating curve(io - ta) average rectified forward current:io(a) sin( q 180) dc d=1/2 v r io t tj=150 c d=t/t t v r =30v 0a 0v 0 5 10 15 20 25 30 0 25 50 75 100 125 150 average rectified forward current:io(a) case temperature:tc( c ) derating curve(io - tc) sin( q 180) dc d=1/2 v r io t tj=150 c d=t/t v r =30v 0a 0v t 0 5 10 15 20 25 30 ave:2.9kv c=100pf r=1.5k w c=200pf r=0 w ave:12.6kv electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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