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savantic semiconductor product specification silicon npn power transistors 2N5428 2n5430 description with to-66 package low collector saturation voltage : v ce(sat) =1.2v(max)@i c =7a excellent safe operating areas applications designed for switching and wide-band amplifier applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2N5428 80 v cbo collector-base voltage 2n5430 open emitter 100 v 2N5428 80 v ceo collector-emitter voltage 2n5430 open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a i b base current 1 a p d total power dissipation t c =25 40 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 4.37 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N5428 2n5430 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N5428 80 v ceo(sus) collector-emitter sustaining voltage 2n5430 i c =50ma ; i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =2a ;i b =0.2a 0.7 v v cesat-2 collector-emitter saturation voltage i c =7a i; b =0.7a 1.2 v v besat-1 base-emitter saturation voltage i c =2a ;i b =0.2a 1.2 v v besat-2 base-emitter saturation voltage i c =7a i; b =0.7a 2.0 v 2N5428 v ce =75v;v be(off) =1.5v t c =150 0.1 1.0 i cex collector cut-off current 2n5430 v ce =90v;v be(off) =1.5v t c =150 0.1 1.0 ma i cbo collector cut-off current v cb =rated v cbo ;i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe-1 dc current gain i c =0.5a ; v ce =2v 60 h fe-2 dc current gain i c =2a ; v ce =2v 60 240 h fe-3 dc current gain i c =5a ; v ce =2v 40 f t transition frequency i c =0.5a ; v ce =10v;f=10mhz 20 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N5428 2n5430 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2N5428 2n5430 |
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