Part Number Hot Search : 
DMP2004 IRFF9220 CA3304M FRF0610 DL400 V804ME04 BB64007 2N3072
Product Description
Full Text Search
 

To Download 2N5428 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  savantic semiconductor product specification silicon npn power transistors 2N5428 2n5430 description with to-66 package low collector saturation voltage : v ce(sat) =1.2v(max)@i c =7a excellent safe operating areas applications designed for switching and wide-band amplifier applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2N5428 80 v cbo collector-base voltage 2n5430 open emitter 100 v 2N5428 80 v ceo collector-emitter voltage 2n5430 open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a i b base current 1 a p d total power dissipation t c =25 40 w t j junction temperature 200  t stg storage temperature -65~200  thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 4.37 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N5428 2n5430 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N5428 80 v ceo(sus) collector-emitter sustaining voltage 2n5430 i c =50ma ; i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =2a ;i b =0.2a 0.7 v v cesat-2 collector-emitter saturation voltage i c =7a i; b =0.7a 1.2 v v besat-1 base-emitter saturation voltage i c =2a ;i b =0.2a 1.2 v v besat-2 base-emitter saturation voltage i c =7a i; b =0.7a 2.0 v 2N5428 v ce =75v;v be(off) =1.5v t c =150 0.1 1.0 i cex collector cut-off current 2n5430 v ce =90v;v be(off) =1.5v t c =150 0.1 1.0 ma i cbo collector cut-off current v cb =rated v cbo ;i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe-1 dc current gain i c =0.5a ; v ce =2v 60 h fe-2 dc current gain i c =2a ; v ce =2v 60 240 h fe-3 dc current gain i c =5a ; v ce =2v 40 f t transition frequency i c =0.5a ; v ce =10v;f=10mhz 20 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2N5428 2n5430 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2N5428 2n5430


▲Up To Search▲   

 
Price & Availability of 2N5428

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X