cmxdm7002a surface mount dual n-channel enhancement-mode silicon mosfets description: the central semiconductor cmxdm7002a is special dual version of the 2n7002 enhancement- mode n-channel field effect transistor, manufactured by the n-channel dmos process, and designed for high speed pulsed amplifier and driver applications. this special dual transistor device offers low r ds(on) and low v ds(on). marking code: x02a sot-26 case maximum ratings: (t a =25c) symbol units drain-source voltage v ds 60 v drain-gate voltage v dg 60 v gate-source voltage v gs 40 v continuous drain current i d 280 ma continuous source current (body diode) i s 280 ma maximum pulsed drain current i dm 1.5 a maximum pulsed source current i sm 1.5 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) symbol test conditions min max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =60v, v gs =0 1.0 a i dss v ds =60v, v gs =0, t j =125c 500 a i d(on) v gs =10v, v ds =10v 500 ma bv dss v gs =0, i d =10a 60 v v gs(th) v ds =v gs , i d =250a 1.0 2.5 v v ds(on) v gs =10v, i d =500ma 1.0 v v ds(on) v gs =5.0v, i d =50ma 0.15 v v sd v gs =0, i s =400ma 1.2 v r ds(on) v gs =10v, i d =500ma 2.0 r ds(on) v gs =10v, i d =500ma, t j =125c 3.5 r ds(on) v gs =5.0v, i d =50ma 3.0 r ds(on) v gs =5.0v, i d =50ma, t j =125c 5.0 g fs v ds =10v, i d =200ma 80 ms c rss v ds =25v, v gs =0, f=1.0mhz 5.0 pf c iss v ds =25v, v gs =0, f=1.0mhz 50 pf c oss v ds =25v, v gs =0, f=1.0mhz 25 pf t on , t off v dd =30v, v gs =10v, i d =200ma, r g =25, r l =150 20 ns r2 (12-february 2010) www.centralsemi.com
cmxdm7002a surface mount dual n-channel enhancement-mode silicon mosfets lead code: 1) gate q1 2) source q1 3) drain q2 4) gate q2 5) source q2 6) drain q1 marking code: x02a sot-26 case - mechanical outline pin configuration www.centralsemi.com r2 (12-february 2010)
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