? semiconductor components industries, llc, 2004 july, 2004 ? rev. 11 49 publication order number: 2n4918/d 2n4918 - 2n4920* series preferred device medium-power plastic pnp silicon transistors these medium?power, high?performance plastic devices are designed for driver circuits, switching, and amplifier applications. features ? pb?free package is available** ? low saturation voltage ? v ce(sat) = 0.6 vdc (max) @ i c = 1.0 a ? excellent power dissipation due to thermopad construction, p d = 30 w @ t c = 25 c ? excellent safe operating area ? gain specified to i c = 1.0 a ? complement to npn 2n4921, 2n4922, 2n4923 maximum ratings rating symbol value unit collector ? emitter voltage 2n4918 2n4919 2n4920 v ceo 40 60 80 vdc collector ? base voltage 2n4918 2n4919 2n4920 v cbo 40 60 80 vdc emitter ? base voltage v ebo 5.0 vdc collector current ? continuous (note 5) i c (note 6) 1.0 3.0 adc base current i b 1.0 adc total power dissipation @ t a = 25 c derate above 25 c p d 30 0.24 w w/ c operating and storage junction temperature range t j , t stg ?65 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 5. the 1.0 a max i c value is based upon jedec current gain requirements. the 3.0 a max value is based upon actual current?handling capability of the device (see figure 5). 6. indicates jedec registered data for 2n4918 series. thermal characteristics (note 7) characteristic symbol max unit thermal resistance, junction?to?case jc 4.16 c/w 7. recommend use of thermal compound for lowest thermal resistance. **for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 3.0 a, 40?80 v, 30 w general purpose power transistors *preferred devices are recommended choices for future use and best overall value. to?225 case 077 style 1 1 2 3 http://onsemi.com xx = 18, 19, 20 y = year ww = work week marking diagram yww 2n 49xx see detailed ordering and shipping information in the package dimensions section on page 50 of this data sheet. ordering information
2n4918 ? 2n4920* series http://onsemi.com 50 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector?emitter sustaining voltage (note 8) (i c = 0.1 adc, i b = 0) 2n4918 2n4919 2n4920 ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 40 60 80 ???? ? ?? ? ? ?? ? ???? ? ? ? ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 20 vdc, i b = 0) 2n4918 (v ce = 30 vdc, i b = 0) 2n4919 (v ce = 40 vdc, i b = 0) 2n4920 ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? ? ? ? ???? ? ?? ? ? ?? ? ???? 0.5 0.5 0.5 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = rated v ceo , v be(off) = 1.5 vdc) (v ce = rated v ceo , v be(off) = 1.5 vdc, t c = 125 c ????? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ??? ? ? ???? ? ?? ? ? ?? ? ???? 0.1 0.5 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ?????????????????????? collector cutoff current (v cb = rated v cb , i e = 0) ????? ????? i cbo ??? ??? - ???? ???? 0.1 ??? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (note 8) (i c = 50 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 1.0 vdc) (i c = 1.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 40 30 10 ???? ? ?? ? ? ?? ? ???? ? 150 ? ??? ? ? ? ? ? ? ??? ? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter saturation voltage (note 8) (i c = 1.0 adc, i b = 0.1 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ? ???? ? ?? ? ???? 0.6 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? base-emitter saturation voltage (note 8) (i c = 1.0 adc, i b = 0.1 adc) ????? ????? v be(sat) ??? ??? - ???? ???? 1.3 ??? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? base?emitter on voltage (note 8) (i c = 1.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.3 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? small?signal characteristics ?????????????????????? ?????????????????????? current?gain ? bandwidth product (i c = 250 madc, v ce = 10 vdc, f = 1.0 mhz) ????? ????? f t ??? ??? 3.0 ???? ???? - ??? ??? mhz ?????????????????????? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 100 khz) ????? ????? c ob ??? ??? - ???? ???? 100 ??? ??? pf ?????????????????????? ?????????????????????? small-signal current gain (i c = 250 madc, v ce = 10 vdc, f = 1.0 khz) ????? ????? h fe ??? ??? 25 ???? ???? - ??? ??? - 8. pulse test: pw 300 s, duty cycle 2.0% ordering information device package shipping 2 2n4918 to?225 500 unit / bulk 2n4919 to?225 500 unit / bulk 2n4920 to?225 500 unit / bulk 2n4920g to?225 (pb?free) 500 unit / bulk 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifi- cations brochure, brd8011/d.
2n4918 ? 2n4920* series http://onsemi.com 51 40 30 20 10 0 25 50 75 100 125 150 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts) figure 2. switching time equivalent test circuit 5.0 10 figure 3. turn?on time i c , collector current (ma) v cc = 30 v i c /i b = 20 t, time (s) m 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.05 20 30 50 70 100 200 700 1000 v in t 1 v be(off) approx 9.0 v turn-off pulse t 3 t 2 approx -11 v v cc scope r b c jd <<c eb +4.0 v t 1 < 15 ns 100 < t 2 < 500 s t 3 < 15 ns duty cycle 2.0% v in r c 0.07 3.0 t j = 25 c t j = 150 c i c /i b = 10, unless noted v cc = 60 v v cc = 30 v v cc = 30 v v be(off) = 0 300 500 0 0 v in approx -11 v r b and r c varied to obtain desired current levels t r v be(off) = 2.0 v v cc = 60 v t d
2n4918 ? 2n4920* series http://onsemi.com 52 figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), transient thermal resistance (normalized) 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000 500 jc (t) = r(t) jc jc = 4.16 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.01 single pulse 0.1 10 1.0 figure 5. active?region safe operating area v ce , collector-emitter voltage (volts) 5.0 2.0 1.0 0.5 0.1 2.0 3.0 5.0 10 20 30 50 100 70 0.2 i c , collector current (amp) t j = 150 c dc 5.0 ms 100 s 7.0 pulse curves apply below rated v ceo 1.0 ms second breakdown limited bonding wire limited thermally limit @ t c = 25 c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t m s , storage time (s) t m f , fall time (s) 5.0 10 figure 6. storage time i c , collector current (ma) 2.0 1.0 0.5 0.3 0.2 0.1 0.05 20 30 50 70 500 700 1000 t s = t s - 1/8 t f 0.07 100 3.0 0.7 200 300 t j = 25 c t j = 150 c i c /i b = 20 5.0 10 figure 7. fall time i c , collector current (ma) 2.0 1.0 0.5 0.3 0.2 0.1 0.05 20 30 50 70 500 700 1000 0.07 100 3.0 0.7 200 300 t j = 25 c t j = 150 c i c /i b = 10 i c /i b = 20 i c /i b = 10 i b1 = i b2 v cc = 30 v i b1 = i b2
2n4918 ? 2n4920* series http://onsemi.com 53 typical dc characteristics r be , external base-emitter resistance (ohms) v ce , collector-emitter voltage (volts) -0.2 1000 2.0 figure 8. current gain i c , collector current (ma) 10 3.0 5.0 10 20 30 200 300 500 2000 500 200 100 70 figure 9. collector saturation region 1.0 0.2 i b , base current (ma) 0 0.3 0.5 1.0 2.0 5.0 10 20 50 200 0.8 0.6 0.4 0.2 i c = 0.1 a t j = 25 c 0.25 a 0.5 a 1.0 a 700 300 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 1.0 v 50 30 20 50 100 1000 3.0 30 100 10 8 0 figure 10. effects of base?emitter resistance t j , junction temperature ( c) 30 60 90 120 150 10 7 10 5 10 4 10 3 v ce = 30 v i c = 10 i ces i c = 2x i ces i c i ces i ces values obtained from figure 13 10 6 1.5 2.0 i c , collector current (ma) 5.0 10 20 30 50 100 200 300 2000 1.2 0.9 0.6 0.3 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 voltage (volts) figure 11. aono voltage 3.0 500 1000 v be @ v ce = 2.0 v 10 2 figure 12. collector cut?off region v be , base-emitter voltage (volts) 10 1 10 0 10 -1 , collector current (a) m i c 10 - 2 10 3 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 v ce = 30 v t j = 150 c 100 c 25 c forward i c = i ces 10 4 +2.5 2.0 figure 13. temperature coefficients i c , collector current (ma) 3.0 5.0 10 20 30 50 100 200 2000 t j = -55 c to +100 c temperature coefficients (mv/ c) +2.0 +1.5 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 vb for v be * vc for v ce(sat) t j = 100 c to 150 c *applies for i c /i b < h fe @v ce 1.0v 2 +1.0 300 500 1000 reverse
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