complex midium power transistors (50v/1a) QS6Z5 ? structure ? dimensions (unit : mm) npn/pnp silicon epitaxial planar transistor ? features 1) low saturation voltage v ce (sat) = 0.35v (max.) (i c / i b = 500ma / 25ma) v ce (sat) = ? 0.40v (max.) (i c / i b = ? 500ma / ? 25ma) 2) high speed switching ? applications ? inner circuit (unit : mm) package tsmt6 code tr basic ordering unit (pieces) 3000 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6v dc i c 1a pulsed i cp 2a symbol limits unit collector-base voltage v cbo ? 50 v collector-emitter voltage v ceo ? 50 v emitter-base voltage v ebo ? 6 v dc i c ? 1 a pulsed i cp ? 2 a symbol limits unit p d 0.5 w/total p d 1.25 w/total p d 0.9 w/element junction temperature t j 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw=10ms, single pulse *2 mounted on a recommended land. *3 mounted on a 40 x 40 x 0.7[mm] ceramic board. type parameter collector current parameter collector current power dissipation parameter low frequency amplifier driver ? packaging specifications tsmt6 *1 *3 *3 *1 *2 abbreviated symbol : z05 (1) tr.1 base (2) tr.2 emitter (3) tr.2 base (4) tr.2 collector (5) tr.1 emitter (6) tr.1 collecto r (1) tr.1 base (2) tr.2 emitter (3) tr.2 base (4) tr.2 collector (5) tr.1 emitter (6) tr.1 collector (6) (5) (1) (2) (3) (4) 1/7 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
QS6Z5 ? electrical characteristics (ta = 25 c) symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo 50 - - v i c = 1ma collector-base breakdown voltage bv cbo 50 - - v i c = 100a emitter-base breakdown voltage bv ebo 6--v i e = 100a collector cut-off current i cbo --1 p a v cb = 50v emitter cut-off current i ebo --1 p a v eb = 4v collector-emitter staturation voltage v ce(sat) - 130 350 mv i c =500ma, i b =25ma dc current gain h fe 180 - 450 - v ce = 2v, i c = 50ma turn-on time t on -40-ns storage time t stg - 410 - ns fall time t f -75-ns *1 pulsed *2 see switching time test circuit symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo 50 --v collector-base breakdown voltage bv cbo 50 --v emitter-base breakdown voltage bv ebo 6 --v collector cut-off current i cbo -- 1 p a emitter cut-off current i ebo -- 1 p a collector-emitter staturation voltage v ce(sat) - 200 400 mv dc current gain h fe 180 - 450 - turn-on time t on -40-ns storage time t stg - 250 - ns fall time t f -35-ns *1 pulsed *2 see switching time test circuit i c = 0.5a, i b1 = 50ma, i b2 = 50ma, v cc 10v mhz v ce = 10v i e =200ma, f=100mhz collector output capacitance c ob -12-pf 400 - conditions i c = 1ma i c = 100a i e = 100a - transition frequency f t - collector output capacitance c ob parameter i c = 0.5a, i b1 = 50ma, i b2 = 50ma, v cc 10v transition frequency f t - 7 v ce = 10v i e = 200ma, f=100mhz conditions pf v cb = 10v, i e =0a f=1mhz parameter mhz 360 - - v cb = 10v, i e =0a f=1mhz v cb = 50v v eb = 4v i c = 500ma, i b = 25ma v ce = 2v, i c = 50ma *2 *2 *2 ~ _ *1 *1 *2 *2 *2 *1 *1 ~ _ 2/7 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS6Z5 ? electrical characteristic curves (ta=25 ? c) tr.1 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 0.5 1 1.5 2 2.5ma 2.0ma 1.5ma 1.0ma i b =0.5ma 3.0ma 4ma 5ma ta=25 c colector to emitter voltage : v ce [v] fig.2 typical outputcharacteristics collector current : i c [a] 10 100 1000 1 10 100 1000 10000 dc current gain : hfe ta=25 c v ce =5v 2v collector current : i c [ma] fig.3 dc current gain vs. collector current ( i ) 10 100 1000 1 10 100 1000 10000 dc current gain :hfe v ce =2v ta=125 c 75 c 25 c - 40 c collector current : i c [ma] fig.4 dc current gain vs.collector current ( ii ) 0.001 0.01 0.1 1 1 10 100 1000 10000 collector saturation voltage : v ce (sat)[v] collector current : i c [ma] ta=25 c i c /i b =50 20 10 fig.5 collector - emitter saturation voltage vs. collector current ( i ) 0.001 0.01 0.1 1 1 10 100 1000 10000 collector saturation voltage :v ce (sat)[v] collector current : i c [ma] i c /i b =20 ta=125 c 75 c 25 c - 40 c fig.6 collector - emitter saturation voltage vs. collector current(ii) 1 10 100 1000 10000 0 0.5 1 1.5 collector current :i c [ma] v ce =2v base to emitter voltage : v be [v] ta=125 c 75 c 25 c - 40 c fig.1 ground emitter propagation characteristics 3/7 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS6Z5 1 10 100 1000 0.1 1 10 100 collector - base voltage : v cb [v] emitter - base voltage : v eb [v] ta=25 c f=1mhz i e =0a i c =0a emitter input capacitance : cib[pf] cob cib collector output capacitance : cob[pf] fig.7 emitter input capacitance vs. emitter - base voltage collector output capacitance vs. collector - base 10 100 1000 10 100 1000 transition frequency : f t [mhz] emitter current : i e [ma] ta=25 c v ce =10v fig.8 gain bandwidthproduct vs. emitter 0.001 0.01 0.1 1 10 0.1 1 10 100 dc 100ms 10ms 1ms ta=25 c single non repetitive pulse mounted on a recommended land when one element operated collector to emitter voltage :v ce [v] collector current : i c [a] fig.9 safe operating area 4/7 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS6Z5 tr.2 -1 -10 -100 -1000 -10000 -1.5 -1 -0.5 0 collector current : i c [ma] v ce = - 2v ta=125 c 75 c 25 c - 40 c fig.1 ground emitter propagation characteristics base to emitter voltage : v be [v] -0.5 -0.4 -0.3 -0.2 -0.1 0.0 -2 -1.5 -1 -0.5 0 - 2.5ma - 2.0ma - 1.5ma - 1.0ma i b = - 0.5ma - 3.0ma - 5.0ma - 4.0ma colector to emitter voltage : v ce [v] fig.2 typical output characteristics collector current : i c [a] 10 100 1000 -1 -10 -100 -1000 -10000 dc current gain : hfe ta=25 c v ce = - 5v - 2v collector current : i c [ma] fig.3 dc current gain vs. collector current ( i ) 10 100 1000 -1 -10 -100 -1000 -10000 dc current gain : hfe v ce = - 2v ta=125 c 75 c 25 c - 40 c collector current : i c [ma] fig.4 dc current gain vs. collector current ( ii ) -0.001 -0.01 -0.1 -1 -1 -10 -100 -1000 -10000 collector saturation voltage : v ce (sat)[v] collector current : i c [ma] ta=25 c i c /i b =50 20 10 fig.5 collector - emitter saturation voltage vs. collector current ( i ) -0.001 -0.01 -0.1 -1 -1 -10 -100 -1000 -10000 collector saturation voltage : v ce (sat)[v] collector current : i c [ma] i c /i b =20 ta=125 c 75 c 25 c - 40 c fig.6 collector - emitter saturation voltage vs. collector current ( ii ) 5/7 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS6Z5 1 10 100 1000 -0.1 -1 -10 -100 collector - base voltage : v cb [v] emitter - base voltage : v eb [v] ta=25 c f=1mhz i e =0a i c =0a emitter input capacitance : cib(pf) cob cib collector output capacitance : cob(pf) fig.7 emitter input capacitance vs. emitter - base voltage collector output capacitance vs.collector - base voltage 10 100 1000 10 100 1000 transition frequency : f t [mhz] emitter current : i e [ma] ta=25 c v ce = - 10v fig.8 gain bandwidth product vs. emitter -0.001 -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 dc 100ms 10ms 1ms ta=25 c single non repetitive pulse mounted on a recommended land when one element operated collector to emitter voltage : v ce [v] collector current : i c [a] fig.9 safe operating area 6/7 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS6Z5 ? switching time test circuit base current waveform collector current waveform base current waveform collector current waveform pw 50 s v cc ? 10v i b2 i b1 90% 10% t stg t on t f i c v in pw duty cycle Q1% i b1 i b2 i c r l =20 ? ~ _ ~ _ v in p w pw 50 s duty cycle Q1% t stg i b1 i b2 90% 10% t on t f i c r l =20 ? i b1 i b2 i c v cc 10v ~ _ ~ _ 7/7 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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