DMN26D0UFB4 document number: ds31775 rev. 5 - 2 1 of 6 www.diodes.com july 2010 ? diodes incorporated DMN26D0UFB4 n-channel enhancement mode field effect transistor features ? n-channel mosfet ? low on-resistance: ? 3.0 @ 4.5v ? 4.0 @ 2.5v ? 6.0 @ 1.8v ? 10 @ 1.5v ? very low gate threshold voltage, 1.2v max ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? esd protected gate ? lead, halogen and antimony free, rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn1006h4-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.001 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 20 v gate-source voltage v gss 10 v drain current (note 1) i d 230 ma pulsed drain current t p = 10s i dm 805 ma thermal characteristics @t a = 25c unless otherwise specified total power dissipation (note 1) @t a = 25c p d 350 mw thermal resistance, junction to ambient (note 1) r ja 357 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb, pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.di odes.com/datas heets/ap02001.pdf. 2. no purposefully added lead. 3. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com /products/lead_free/index.php. dfn1006h4-3 bottom view e q uivalent circuit top view source body diode gate protection diode gate drai n d s g esd protected
DMN26D0UFB4 document number: ds31775 rev. 5 - 2 2 of 6 www.diodes.com july 2010 ? diodes incorporated DMN26D0UFB4 electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 100 a zero gate voltage drain current @ t c = 25c i dss ? ? 500 na v ds = 20v, v gs = 0v gate-body leakage i gss ? ? 1 100 a na v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) 0.6 ? 0.9 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? ? ? ? 1.8 2.4 2.9 3.7 5.4 3.0 4.0 6.0 10.0 15.0 v gs = 4.5v, i d = 100ma v gs = 2.5v, i d = 50ma v gs = 1.8v, i d = 20ma v gs = 1.5v, i d = 10ma v gs = 1.2v, i d = 1ma forward transconductance |y fs | 100 242 ? ms v ds =10v, i d = 0.1a source-drain diode forward voltage v sd 0.5 ? 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss ? 14.1 ? pf v ds = 15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 2.9 ? pf reverse transfer capacitance c rss ? 1.6 ? pf switching characteristics turn-on time t on ? 12 ? ns v gs = 4.5v, v dd = 10v i d = 200ma, r g = 2.0 ? turn-off time t off ? 29 ? notes: 4. short duration pulse test used to minimize self-heating effect. 0 0.5 1 1.5 2 2.5 3 fig. 1 typical output characteristic v , drain-source voltage (v) ds 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i, d r ain c u r r en t (a) d v = 2.0v gs v = 3.0v gs v = 4.5v gs v = 8v gs v = 2.5v gs v = 1.5v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs 0 0.1 0.2 0.3 0.4 i, d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v ds
DMN26D0UFB4 document number: ds31775 rev. 5 - 2 3 of 6 www.diodes.com july 2010 ? diodes incorporated DMN26D0UFB4 1 2 3 4 5 0.01 0.1 1 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 2.5v gs v = 1.8v gs 0.01 0.1 1 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature 0 1 2 3 4 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r , d r ain-s o u r c e on-resistance (normalized) dson v = 2.5v i = 150ma gs d v = 4.5v i = 500ma gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 r , d r ain-s o u r c e on-resistance ( ) dson v = 4.5v i = 500ma gs d v = 2.5v i = 150ma gs d fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i = 1ma d i = 250a d 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i, s o u r c e c u r r en t (a) s t = 25c a
DMN26D0UFB4 document number: ds31775 rev. 5 - 2 4 of 6 www.diodes.com july 2010 ? diodes incorporated DMN26D0UFB4 fig. 9 typical total capacitance v , drain-source voltage (v) ds 04 8121620 0 5 10 15 20 c , c a p a c i t a n c e (p f ) c iss c rss c oss f = 1mhz 0 2 4 6 8 10 12 14 16 18 20 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 0.1 10 100 1,000 10,000 i, leaka g e c u r r en t (na) dss 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e 0.000001 0.001 0.01 0.1 1 10 100 1,000 fig. 11 transient thermal response t , pulse duration time (s) 1 0.0001 0.00001 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 278c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 ordering information (note 5) part number case packaging DMN26D0UFB4-7 dfn1006h4-3 3000/tape & reel notes: 5. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information m1 = product type marking code m1
DMN26D0UFB4 document number: ds31775 rev. 5 - 2 5 of 6 www.diodes.com july 2010 ? diodes incorporated DMN26D0UFB4 package outline dimensions suggested pad layout dfn1006h4-3 dim min max typ a ? 0.40 ? a1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.05 1.00 e 0.55 0.65 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
DMN26D0UFB4 document number: ds31775 rev. 5 - 2 6 of 6 www.diodes.com july 2010 ? diodes incorporated DMN26D0UFB4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regarding to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com
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