 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor product specification silicon npn power transistors BUL56B description ? ? with to-220c package ? high voltage ? fast switching ? high energy rating applications ?designed for use in electronic ballast applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 18 a i cm collector current-peak 25 a i b base current 5 a p tot total power dissipation t c =25 ?? 85 w t stg operating and storage te mperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BUL56B characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10ma ;i b =0 100 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 250 v v (br)ebo emitter-base breakdwon voltage i e =1ma ;i c =0 10 v v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.1a 0.2 v v cesat-2 collector-emitter saturation voltage i c =7a ;i b =0.7a 0.6 v v cesat-3 collector-emitter saturation voltage i c =12a; i b =1.2a 1.2 v v besat-1 base-emitter saturation voltage i c =7a; i b =0.7a 1.2 v v besat-2 base-emitter saturation voltage i c =12a; i b =1.2a 1.8 v i cbo collector cut-off current v cb =250v; i e =0 t c =125 ?? 10 100 | a i ceo collector cut-off current v ce =90v ;i b =0 100 | a i ebo emitter cut-off current v eb =9v; i c =0 t c =125 ?? 10 100 | a h fe-1 dc current gain i c =0.3a ; v ce =5v 30 90 h fe-2 dc current gain i c =5a ; v ce =5v 25 60 h fe-3 dc current gain i c =12a ; v ce =1v 5 f t transition frequency i c =0.2a ; v ce =4v 20 mhz c ob output capacitance v cb =100v ;f=1mhz 100 pf inchange semiconductor product specification 3 silicon npn power transistors BUL56B package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
Price & Availability of BUL56B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |