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| savantic semiconductor product specification silicon npn power transistors BUL56B d escription with to-220c package high voltage fast switching high energy rating applications designed for use in electronic ballast applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 18 a i cm collector current-peak 25 a i b base current 5 a p tot total power dissipation t c =25 85 w t stg operating and storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors BUL56B characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10ma ;i b =0 100 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 250 v v (br)ebo emitter-base breakdwon voltage i e =1ma ;i c =0 10 v v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.1a 0.2 v v cesat-2 collector-emitter saturation voltage i c =7a ;i b =0.7a 0.6 v v cesat-3 collector-emitter saturation voltage i c =12a; i b =1.2a 1.2 v v besat-1 base-emitter saturation voltage i c =7a; i b =0.7a 1.2 v v besat-2 base-emitter saturation voltage i c =12a; i b =1.2a 1.8 v i cbo collector cut-off current v cb =250v; i e =0 t c =125 10 100 a i ceo collector cut-off current v ce =90v ;i b =0 100 a i ebo emitter cut-off current v eb =9v; i c =0 t c =125 10 100 a h fe-1 dc current gain i c =0.3a ; v ce =5v 30 90 h fe-2 dc current gain i c =5a ; v ce =5v 25 60 h fe-3 dc current gain i c =12a ; v ce =1v 5 f t transition frequency i c =0.2a ; v ce =4v 20 mhz c ob output capacitance v cb =100v ;f=1mhz 100 pf savantic semiconductor product specification 3 silicon npn power transistors BUL56B package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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