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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB695 description collector-emitter breakdown voltage- : v (br)ceo = -120v(min) good linearity of h fe wide area of safe operation complement to type 2sd731 applications designed for power amplifier and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -170 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -7 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB695 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -30ma; i b = 0 -120 v v (br)cbo collector-base breakdown voltage i c = -1ma; i e = 0 -170 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -5 v v ce (sat) collector-emitter saturation voltage i c = -5a; i b = -0.5a b -1.5 v v be (on) base -emitter on voltage i c = -1a; v ce = -5v -1.5 v i cbo collector cutoff current v cb = -170v; i e =0 -50 a i ebo emitter cutoff current v eb = -5v; i c =0 -50 a h fe-1 dc current gain i c = -1a; v ce = -5v 40 200 h fe-2 dc current gain i c = -5a; v ce = -5v 20 c ob output capacitance i e =0; v cb = -10v; f test = 1.0mhz 350 pf f t current-gain?bandwidth product i c =-1a; v ce = -5v 7 mhz isc website www.iscsemi.cn 2 |
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