D965 npn general purpose transistor elektronische bauelemente 17-nov-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen and lead free features ? audio amplifier ? flash unit of camera ? switching circuit classification of h fe(2) rank r t v range 340 - 600 560 - 950 900 - 2000 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector - base voltage v cbo 42 v collector - emitter voltage v ceo 22 v emitter - base voltage v ebo 6 v collector current -continuous i c 5 a cpllector power dissipation p c 750 mw junction, storage temperature t j , t stg +150, -55 ~ +150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector - base breakdown voltage v (br)cbo 42 - - v i c = 0.1ma, i e = 0 collector - emitter breakdown voltage v (br)ceo 22 - - v i c = 1 ma, i b = 0 emitter - base breakdown voltage v (br)ebo 6 - - v i e = 10 a, i c = 0 collector cut - off current i cbo - - 0.1 ? a v cb = 30v, i e = 0 emitter cut - off current i ebo - - 0.1 ? a v eb = 6v, i c = 0 dc current gain h fe(1) 150 - - v ce = 2v, i c = 0.15 ma h fe(2) 340 - 2000 v ce = 2v, i c = 500 ma h fe(3) 150 - - v ce = 2v, i c = 2a collector - emitter saturation voltage v ce(sat) - - 0.35 v i c = 3000ma, i b = 100 ma transition frequency f t - 150 - mhz v ce = 6v, i c = 50 ma, f = 30mhz to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g1.27 typ. h1.10 - j 2.42 2.66 k 0.36 0.76 ? emitte r ? collector ? base
D965 npn general purpose transistor elektronische bauelemente 17-nov-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
