savantic semiconductor product specification silicon npn power transistors 2SD1496 d escription with to-3pn package high voltage ,high reliability wide area of safe operation applications high voltage power switching tv horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i c( surge ) collector surge current 16 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -45~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1496 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 6 v v (br)ceo collector-emitter breakdown voltage i c =10ma; r be = 9 600 v v cesat collector-emitter saturation voltage i c =4.5a; i b =1.2a 5.0 v v besat base-emitter saturation voltage i c =4.5a; i b =1.2a 1.5 v i cex collector cut-off current v ce =1500v; v be =1.5v 1.0 ma i ebo emitter cut-off current v eb =6v; i c =0 1.0 ma h fe dc current gain i c =0.3a ; v ce =5v 10 30 t f fall time i c =3a;i b1 =0.7a, i b2 =-2.7a; l b =0 2.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1496 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
|
