switching transistor pnp silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 25 vdc collectoremitter voltage v ces 25 vdc collectorbase voltage v cbo 25 vdc emitterbase voltage v ebo 4.0 vdc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja (1) 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 100 adc, v be = 0) v (br)ces 25 e vdc collectoremitter sustaining voltage (2) (i c = 10 madc, i b = 0) v ceo(sus) 25 e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 25 e vdc emitterbase breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 4.0 e vdc collector cutoff current (v ce = 15 vdc, v be = 0) (v ce = 15 vdc, v be = 0, t a = 65 c) i ces e e 0.035 2.0 adc emitter cutoff current (v eb = 3.0 v, i c = 0) i ebo e 35 na base current (v ce = 15 vdc, v be = 0) i b e 0.035 adc 1. r ja is measured with the device soldered into a typical printed circuit board. 2. pulse test: pulse width 300 s; duty cycle 2.0%. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: mps3638a/d mps3638a case 2911, style 1 to92 (to226aa) 1 2 3 collector 3 2 base 1 emitter
mps3638a http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (2) dc current gain (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 300 madc, v ce = 2.0 vdc) h fe 80 100 100 20 e e e e e collectoremitter saturation voltage (i c = 50 madc, i b = 2.5 madc) (i c = 300 madc, i b = 30 madc) v ce(sat) e e 0.25 1.0 vdc baseemitter saturation voltage (i c = 50 madc, i b = 2.5 madc) (i c = 300 madc, i b = 30 madc) v be(sat) e 0.80 1.1 2.0 vdc smallsignal characteristics currentgain e bandwidth product (v ce = 3.0 vdc, i c = 50 madc, f = 100 mhz) f t 150 e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo e 10 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo e 25 pf input impedance (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h ie e 2000 k w voltage feedback ratio (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h re e 15 x 10 4 smallsignal current gain (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h fe 100 e e output admittance (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h oe e 1.2 mmhos switching characteristics delay time (v 10 vdc i 300 madc i 30 madc) t d e 20 ns rise time (v cc = 10 vdc, i c = 300 madc, i b1 = 30 madc) t r e 70 ns storage time (v cc = 10 vdc, i c = 300 madc, t s e 140 ns fall time (v cc 10 vdc , i c 300 madc , i b1 = 30 madc, i b2 = 30 madc) t f e 70 ns turnon time (i c = 300 madc, i b1 = 30 madc) t on e 75 ns turnoff time (i c = 300 madc, i b1 = 30 madc, i b2 = 30 madc) t off e 170 ns 2. pulse test: pulse width 300 s; duty cycle 2.0%.
mps3638a http://onsemi.com 3 figure 1. turnon time figure 2. turnoff time switching time equivalent test circuit scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +2 v -16 v 10 to 100 m s, duty cycle = 2% 0 1.0 k w -30 v 200 w c s * < 10 pf 1.0 k w -30 v 200 w c s * < 10 pf +4.0 v < 2 ns 1.0 to 100 m s, duty cycle = 2% < 20 ns +14 v 0 -16 v figure 3. capacitances reverse voltage (volts) 7.0 10 20 30 5.0 figure 4. charge data i c , collector current (ma) 0.1 2.0 5.0 10 20 2.0 30 capacitance (pf) q, charge (nc) 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 c eb q t q a 25 c 100 c transient characteristics 3.0 1.0 0.5 0.3 0.2 0.3 0.2 30 c cb 0.7 7.0
mps3638a http://onsemi.com 4 figure 5. turnon time i c , collector current (ma) 20 30 50 5.0 10 7.0 figure 6. rise time i c , collector current (ma) figure 7. storage time i c , collector current (ma) 25 c 100 c transient characteristics (continued) t s , storage time (ns) t, time (ns) 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v t d @ v be(off) = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 10 20 50 70 100 200 300 500 30 100 20 70 50 200 30 t r , rise time (ns) i c /i b = 10 i c /i b = 20 i b1 = i b2 t s = t s - 1/8 t f
mps3638a http://onsemi.com 5 6 8 10 0 4 2 0.1 2.0 5.0 10 20 50 1.0 0.5 0.2 0.01 0.02 0.05 100 figure 8. frequency effects f, frequency (khz) smallsignal characteristics noise figure v ce = 10 vdc, t a = 25 c bandwidth = 1.0 hz nf, noise figure (db) i c = 1.0 ma, r s = 430 w i c = 500 m a, r s = 560 w i c = 50 m a, r s = 2.7 k w i c = 100 m a, r s = 1.6 k w r s = optimum source resistance 50 100 200 500 1k 2k 5k 10k 20k 50k 6 8 10 0 4 2 nf, noise figure (db) figure 9. source resistance effects r s , source resistance (ohms) f = 1 khz i c = 50 m a 100 m a 500 m a 1.0 ma
mps3638a http://onsemi.com 6 h parameters v ce = 10 vdc, f = 1.0 khz, t a = 25 c this group of graphs illustrates the relationship between h fe and other aho parameters for this series of transistors. to obtain these curves, a highgain and a lowgain unit were selected from the 2n4402 line, and the same units were used to develop the correspondinglynumbered curves on each graph. figure 10. current gain i c , collector current (madc) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 300 700 30 200 100 1000 h fe , current gain h ie , input impedance (ohms) figure 11. input impedance i c , collector current (madc) 100k 100 50 5.0 7.0 20k 10k 5k 2k 1k 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 figure 12. voltage feedback ratio i c , collector current (madc) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 0.1 20 figure 13. output admittance i c , collector current (madc) 500 1.0 5.0 7.0 50 20 10 5.0 2.0 5.0 2.0 1.0 0.5 0.2 h , output admittance ( mhos) oe h , voltage feedback ratio (x 10 ) re -4 2n4402 unit 1 2n4402 unit 2 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 500 70 50k 500 200 2n4402 unit 1 2n4402 unit 2 2n4402 unit 1 2n4402 unit 2 10 2n4402 unit 1 2n4402 unit 2 100
mps3638a http://onsemi.com 7 static characteristics figure 14. dc current gain i c , collector current (ma) figure 15. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector-emitter voltage (volts) 0.5 2.0 3.0 50 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma 0.07 0.05 0.03 0.02 0.01 10 ma 100 ma 10 20 30 0.3 0.5 0.7 1.0 3.0 0.1 h , normalized current gain 0.5 2.0 3.0 10 50 70 0.2 0.3 0.2 100 1.0 0.7 500 30 20 5.0 7.0 fe t j = 125 c -55 c 2.0 200 300 25 c v ce = 1.0 v v ce = 10 v figure 16. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 17. temperature coefficients i c , collector current (ma) voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 0.5 0 0.5 1.0 1.5 2.0 500 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(sat) @ v ce = 10 v vc for v ce(sat) vs for v be 200 0.1 0.2 0.5 coefficient (mv/ c) 2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 500 ma 0.005
mps3638a http://onsemi.com 8 package dimensions case 02911 (to226aa) issue ad c r n n 1 j section xx d 23 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p l f b k g h xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.021 0.457 0.533 f 0.016 0.019 0.407 0.482 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.135 --- 3.43 --- style 1: pin 1. emitter 2. base 3. collector on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mps3638a/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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