complementary power darlingtons for isolated package applications designed for generalpurpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. ? isolated overmold package, to220 type ? electrically similar to the popular 2n6388, 2n6668, tip102 and tip107 ? 100 v ceo(sus) ? 10 a rated collector current ? no isolating washers required ? reduced system cost ? high dc current gain e 1000 (min) @ i c = 5.0 adc ? high isolation voltage (up to 4500 vrms) ? case 221d is ul recognized at 3500 vrms: file #e69369 ????????????????????????????????? ????????????????????????????????? maximum ratings ??????????????????????? ??????????????????????? rating ???? ???? symbol ?????? ?????? value ??? ??? unit ??????????????????????? ??????????????????????? collectoremitter voltage ???? ???? v ceo ?????? ?????? 100 ??? ??? vdc ??????????????????????? ??????????????????????? collectorbase voltage ???? ???? v cb ?????? ?????? 100 ??? ??? vdc ??????????????????????? ??????????????????????? emitterbase voltage ???? ???? v eb ?????? ?????? 5.0 ??? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? rms isolation voltage (1) test no. 1 per figure 14 (for 1 sec, r.h. < 30%, t a = 25 c) test no. 2 per figure 15 test no. 3 per figure 16 ???? ??? ? ???? v isol ?????? ? ???? ? ?????? 4500 3500 1500 ??? ? ? ? ??? v ??????????????????????? ? ????????????????????? ? ??????????????????????? collector current e continuous e peak(2) ???? ??? ? ???? i c ?????? ? ???? ? ?????? 10 15 ??? ? ? ? ??? adc ??????????????????????? ??????????????????????? base current ???? ???? i b ?????? ?????? 1.0 ??? ??? adc ??????????????????????? ??????????????????????? total power dissipation* @ t c = 25 c derate above 25 c ???? ???? p d ?????? ?????? 40 0.31 ??? ??? watts w/ c ??????????????????????? ? ????????????????????? ? ??????????????????????? total power dissipation @ t a = 25 c derate above 25 c ???? ??? ? ???? p d ?????? ? ???? ? ?????? 2.0 0.016 ??? ? ? ? ??? watts w/ c ??????????????????????? ??????????????????????? operating and storage junction temperature range ???? ???? t j , t stg ?????? ?????? 65 to +150 ??? ??? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ?????? ?????? max ??? ??? unit ??????????????????????? ??????????????????????? thermal resistance, junction to case* ???? ???? r q jc ?????? ?????? 3.2 ??? ??? c/w ??????????????????????? ??????????????????????? thermal resistance, junction to ambient ???? ???? r q ja ?????? ?????? 62.5 ??? ??? c/w ??????????????????????? ??????????????????????? lead temperature for soldering purpose ???? ???? t l ?????? ?????? 260 ??? ??? c (1) proper strike and creepage distance must be provided. (2) pulse test: pulse width = 5.0 ms, duty cycle 10%. *measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink, thermal grease applied and a mounting torque of 6 to 8 in lbs. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 6 1 publication order number: mjf6388/d mjf6388 mjf6668 complementary silicon power darlingtons 10 amperes 100 volts 40 watts *on semiconductor preferred devices * npn pnp * case 221d02 ul recognized 1 2 3 style 2: pin 1. base 2. collector 3. emitter
mjf6388 mjf6668 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 30 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 100 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 80 vdc, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 10 ??? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 100 vdc, v eb(off) = 1.5 vdc) collector cutoff current (v ce = 100 vdc, v eb(off) = 1.5 vdc, t c = 125 c) ????? ? ??? ? ????? i cex ??? ? ? ? ??? e e ???? ? ?? ? ???? 10 3.0 ??? ? ? ? ??? m adc madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 2.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 3.0 adc, v ce = 4.0 vdc) dc current gain (i c = 5.0 adc, v ce = 3.0 vdc) dc current gain (i c = 8.0 adc, v ce = 4.0 vdc) dc current gain (i c = 10 adc, v ce = 3.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 3000 1000 200 100 ???? ? ?? ? ? ?? ? ???? 15000 e e e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 3.0 adc, i b = 6.0 madc) collectoremitter saturation voltage (i c = 5.0 adc, i b = 0.01 adc) collectoremitter saturation voltage (i c = 8.0 adc, i b = 80 madc) collectoremitter saturation voltage (i c = 10 adc, i b = 0.1 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ???? 2.0 2.0 2.5 3.0 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter saturation voltage (i c = 5.0 adc, i b = 0.01 adc) baseemitter saturation voltage (i c = 10 adc, i b = 0.1 adc) ????? ????? v be(sat) ??? ??? e e ???? ???? 2.8 4.5 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 8.0 adc, v ce = 4.0 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 2.5 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? smallsignal current gain (i c = 1.0 adc, v ce = 5.0 vdc, f test = 1.0 mhz) ????? ????? |h fe | ??? ??? 20 ???? ???? e ??? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) mjf6388 mjf6668 ????? ? ??? ? ????? c ob ??? ? ? ? ??? e ???? ? ?? ? ???? 200 300 ??? ? ? ? ??? pf ?????????????????????? ?????????????????????? insulation capacitance (collectortoexternal heatsink) ????? ????? c chs ??? ??? e ???? ???? 3.0 typ ??? ??? pf ?????????????????????? ?????????????????????? smallsignal current gain (i c = 1.0 adc, v ce = 5.0 vdc, f = 1.0 khz) ????? ????? h fe ??? ??? 1000 ???? ???? e ??? ??? e (1) pulse test: pulse width 300 m s, duty cycle 2.0%. base emitter collector 8 k 120 base emitter collector 8 k 120 npn mjf6388 pnp mjf6668 figure 1. darlington schematic
mjf6388 mjf6668 http://onsemi.com 3 0.3 figure 2. switching times test circuit v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c 0.1 10 0.5 2 5 5 i c , collector current (amps) t, time (s) m 1 0.2 0.1 7 figure 3. typical switching times t s 0.3 3 0.2 1 0.07 0.7 v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c 0.1 0.7 10 0.5 0.3 25 5 i c , collector current (amps) t, time (s) m 1 0.2 0.1 7 3 0.2 1 10 0.7 37 npn mjf6388 pnp mjf6668 v ce , collector-emitter voltage (volts) figure 4. maximum forward bias safe operating area 1 20 0.3 30 current limit secondary breakdown limit thermal limit @ t c = 25 c (single pulse) i c , collector current (amps) 0.02 23 50 3 0.05 10 0.03 dc t j = 150 c 1ms 5 ms 100 m s 2 5 0.1 5 100 20 0.5 2 10 0.2 0.5 1 120 8 k v 1 approx. +12 v v 2 approx. -8 v 25 m s r b 51 d 1 -4 v v cc +30 v r c scope tut t r , t f 10 ns duty cycle = 1% for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. r b & r c varied to obtain desired current levels d 1 , must be fast recovery types, e.g., mur110 used above i b 100 ma msd6100 used below i b 100 ma t f t r t d t r t s t d t f
mjf6388 mjf6668 http://onsemi.com 4 t, time (ms) 0.01 0.01 0.05 1 2 5 10 20 50 500 100k 0.1 0.5 0.2 1 0.2 0.1 0.05 r(t), transient thermal r q jc (t) = r(t) r q jc r q jc = c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 single pulse resistance (normalized) figure 5. thermal response 0.5 d = 0.5 0.3 0.03 0.02 0.02 100 200 330 0.3 300 1k 2k 5k 10k 20k 50k 3k 30k 0.2 0.1 0.05 t c , case temperature ( c) 0 40 120 160 0.6 power derating factor second breakdown derating 1 0.8 0.4 0.2 60 100 140 80 thermal derating 20 figure 6. maximum power derating there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 4 is based on t j(pk) = l50 c; t c is variable depending on conditions. secondary breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. figure 7. typical smallsignal current gain f, frequency (khz) h fe , small-signal current gain t c = 25 c v ce = 4 vdc i c = 3 adc 10,000 200 100 1000 500 300 10 30 2000 3000 5000 1 1000 50 10 5 100 500 2 20 200 20 50 f, frequency (khz) h fe , small-signal current gain 10,000 200 100 1000 500 10 2000 5000 1 1000 50 10 5 100 500 2 20 200 20 50 npn mjf6388 pnp mjf6668 t c = 25 c v ce = 4 volts i c = 3 amps 3 30 300 70 7
mjf6388 mjf6668 http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 70 300 30 200 100 50 v r , reverse voltage (volts) c, capacitance (pf) c ib c ob 0.1 100 5 1 0.5 10 50 0.2 2 20 t j = 25 c npn mjf6388 pnp mjf6668 70 300 30 200 100 50 v r , reverse voltage (volts) c, capacitance (pf) c ib c ob 0.1 100 5 1 0.5 10 50 0.2 2 20 t j = 25 c i c , collector current (amp) 0.1 i c , collector current (amp) 200 0.2 0.5 3000 1000 10,000 h fe , dc current gain v ce = 4 v t j = 150 c 5000 0.3 1 25 c -55 c 2000 0.7 3 20,000 300 500 510 h fe , dc current gain i b , base current (ma) 2.6 2.2 1.8 1.4 0.3 0.5 0.7 5 23 i c = 2 a 4 a 1 6 a t j = 25 c 3 1 72030 i b , base current (ma) 2.6 2.2 1.8 1.4 10 3 1 200 3000 1000 10,000 5000 2000 20,000 300 500 2 7 0.1 0.2 0.5 0.3 1 0.7 3 5 10 27 v ce = 4 v t j = 150 c 25 c -55 c i c = 2 a 4 a 6 a 700 7000 figure 8. typical capacitance figure 9. typical dc current gain figure 10. typical collector saturation region 0.3 0.5 0.7 5 23 1 7 20 30 10 t j = 25 c
mjf6388 mjf6668 http://onsemi.com 6 npn mjf6388 pnp mjf6668 0.1 v , temperature coefficient (mv/ c) q 10 -1 0 +0.4 -0.2 -0.4 -0.6 +0.6 +0.2 -0.8 -1 -1.2 -1.4 i c , collector current (amp) 0 *i c /i b h fe/3 -5 10 4 v be , base-emitter voltage (volts) 10 -1 0 - 0.4 , collector current (a) m i c 10 3 10 2 10 1 10 0 +0.2 +0.4 +0.6 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 -0.6 -0.2 +0.8 +1 +1.2 +1.4 10 4 v be , base-emitter voltage (volts) , collector current (a) m i c 10 3 10 2 10 1 10 0 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 -4 -3 -2 -1 q vb for v be 25 c to 150 c i c , collector current (amp) figure 11. typical aono voltages figure 12. typical temperature coefficients 0.1 i c , collector current (amp) 2 1.5 v, voltage (volts) 3 2.5 1 0.5 0.2 0.5 5 0.3 1 0.7 3 10 i c , collector current (amp) 2 1.5 v, voltage (volts) 3 2.5 1 0.5 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 4 v v ce(sat) @ i c /i b = 250 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 4 v v ce(sat) @ i c /i b = 250 v , temperature coefficient (mv/ c) q 7 2 0.1 0.2 0.5 5 0.3 1 0.7 3 10 7 2 0.2 0.5 5 0.3 1 0.7 3 10 7 2 0.1 0.2 0.5 5 0.3 1 3 10 7 2 +1 +2 +3 +4 +5 0 -5 -4 -3 -2 -1 +1 +2 +3 +4 +5 -55 c to 25 c *i c /i b h fe/3 figure 13. typical collector cutoff region 0.7 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c * q vc for v ce(sat) * q vc for v ce(sat) q vb for v be 25 c to 150 c -55 c to 25 c
mjf6388 mjf6668 http://onsemi.com 7 mounted fully isolated package leads heatsink 0.110" min figure 14. clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip clip 0.107" min leads heatsink 0.107" min figure 15. clip mounting position for isolation test number 2 figure 16. screw mounting position for isolation test number 3 mounted fully isolated package mounted fully isolated package leads heatsink test conditions for isolation tests* 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a con- stant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack- age. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not reco mmend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 17. typical mounting techniques* mounting information ** for more information about mounting power semiconductors see application note an1040.
mjf6388 mjf6668 http://onsemi.com 8 package dimensions case 221d02 to220 type issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.621 0.629 15.78 15.97 inches b 0.394 0.402 10.01 10.21 c 0.181 0.189 4.60 4.80 d 0.026 0.034 0.67 0.86 f 0.121 0.129 3.08 3.27 g 0.100 bsc 2.54 bsc h 0.123 0.129 3.13 3.27 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 n 0.200 bsc 5.08 bsc q 0.126 0.134 3.21 3.40 r 0.107 0.111 2.72 2.81 s 0.096 0.104 2.44 2.64 u 0.259 0.267 6.58 6.78 b y g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane t u c s j r on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjf6388/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
