UMT1N -0.15a , -60v dual pnp general purpose transistors elektronische bauelemente 15-jul-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features two 2sa1037ak chips in a package. mounting possible with sot-363 automatic mounting machines. transistor elements are independent, eliminating interference. mounting cost and area can be cut in half. marking t1 package information absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol value unit collector-base voltage v (br)cbo -60 v collector-emitter voltage v (br)ceo -50 v emitter-base voltage v (br)ebo -6 v collector current i c -150 ma collector power dissipation p c 150 mw junction & storage temperature t j , t stg 150, -55 ~ 150 electrical characteristics (t a =25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -60 - - v i c = -50 a, i e =0 collector-emitter breakdown voltage v (br)ceo -50 - - i c = -1ma , i b =0 emitter-base breakdown voltage v (br)ebo -6 - - i e = -50 a , i c =0 collector cut-off current i cbo - - -0.1 a v cb = -60v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -6v, i c =0 dc current gain h fe 120 - 560 v ce = -6v, i c = -1ma collector-emitter saturation voltage v ce(sat) - - -0.5 v i c = -50ma, i b = -5ma transition frequency f t - 140 - mhz v ce = -12v, i e =2ma, f=100mhz collector output capacitance c ob - - 5 pf v cb =-12v, i e =0, f=1mhz package mpq leader size sot-363 3k 7 inch ref. millimeter ref. millimeter min. max. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 sot-363 b l f h c j d g k a e 1 2 3 6 5 4
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