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IPB60R199CPA coolmos ? power transistor features ? lowest figure-of-merit r on x q g ? ultra low gate charge ? extreme dv/dt rated ? high peak current capability ? automotive aec q101 qualified ? green package (rohs compliant) coolmos cpa is specially designed for: ? dc/dc converters for automotive applications maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 1) i d,pulse t c =25 c avalanche energy, single pulse e as i d =6.6 a, v dd =50 v 436 mj avalanche energy, repetitive t ar 1),2) e ar i d =6.6 a, v dd =50 v avalanche current, repetitive t ar 1),2) i ar a mosfet d v /d t ruggedness d v /d t v ds =0...480 v v/ns gate source voltage v gs static v power dissipation p tot t c =25 c w operating temperature t j c storage temperature t stg value 16 10 51 0.66 6.6 50 20 -40 ... 150 139 -40 ... 150 v ds 600 v r ds(on),max 0.199 q g,typ 33 nc product summary pg-to263-3 type package marking IPB60R199CPA pg-to263-3 6r199a rev. 2.0 page 1 2009-09-01 www..net
IPB60R199CPA maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 1) i s,pulse 51 reverse diode d v /d t 3) d v /d t 15 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.9 k/w r thja smd version, device on pcb, minimal footprint --62 smd version, device on pcb, 6 cm 2 cooling area 4) -35- soldering temperature, reflow soldering t sold msl 1 - - 245 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v gate threshold voltage v gs(th) v ds = v gs , i d =1.1 ma 2.5 3 3.5 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c --1a gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =9.9 a, t j =25 c - 0.18 0.199 v gs =10 v, i d =9.9 a, t j =150 c - 0.49 - gate resistance r g f =1 mhz, open drain -2- values thermal resistance, junction - ambient value t c =25 c 9.9 rev. 2.0 page 2 2009-09-01
IPB60R199CPA parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1520 - pf output capacitance c oss -72- effective output capacitance, energy related 5) c o(er) -69- effective output capacitance, time related 6) c o(tr) - 180 - turn-on delay time t d(on) -10-ns rise time t r -5- turn-off delay time t d(off) -50- fall time t f -5- gate charge characteristics gate to source charge q gs -8-nc gate to drain charge q gd -11- gate charge total q g -3243 gate plateau voltage v plateau - 5.0 - v reverse diode diode forward voltage v sd v gs =0 v, i f =9.9 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 340 - ns reverse recovery charge q rr - 5.5 - c peak reverse recovery current i rrm -33-a 1) pulse width t p limited by t j, ma x 2) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 3) i sd i d , d i /d t 200a/s, v dclink =400v, v peak < v (br)dss , t j < t jmax , identical low side and high side switch. 5) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. v r =400 v, i f = i s , d i f /d t =100 a/s 6) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 4) device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air. values v gs =0 v, v ds =100 v, f =1 mhz v dd =400 v, v gs =10 v, i d =9.9 a, r g =3.3 : v dd =400 v, i d =9.9 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v rev. 2.0 page 3 2009-09-01
IPB60R199CPA 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics z thjc =f( t p ) i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 50 100 150 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 15 30 45 60 75 0 5 10 15 20 v ds [v] i d [a] limited by on-state resistance rev. 2.0 page 4 2009-09-01
IPB60R199CPA 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =9.9 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.1 0.2 0.3 0.4 0.5 0.6 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ] 25 c 150 c 0 20 40 60 80 0246810 v gs [v] i d [a] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 5 10 15 20 25 30 35 0 5 10 15 20 v ds [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 10 v 0 0.2 0.4 0.6 0.8 1 1.2 0 10203040 i d [a] r ds(on) [ ] rev. 2.0 page 5 2009-09-01
IPB60R199CPA 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =9.9 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche energy 12 drain-source breakdown voltage e as =f( t j ); i d =6.6 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 120 v 400 v 0 1 2 3 4 5 6 7 8 9 10 0 10203040 q gate [nc] v gs [v] 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0 100 200 300 400 500 25 75 125 175 t j [c] e as [mj] rev. 2.0 page 6 2009-09-01
IPB60R199CPA 13 typ. capacitances 14 typ. coss stored energy c =f( v ds ); v gs =0 v; f =1 mhz e oss = f (v ds ) 0 4 8 12 0 100 200 300 400 500 600 v ds [v] e oss [j] ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [pf] rev. 2.0 page 7 2009-09-01
IPB60R199CPA definition of diode switching characteristics rev. 2.0 page 8 2009-09-01
IPB60R199CPA pg-to263-3: outlines rev. 2.0 page 9 2009-09-01
IPB60R199CPA published by infineon technologies ag 81726 mnchen, germany ? 2009 infineon technologies ag. a ll rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non?infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.0 page 10 2009-09-01
notification n 040/10 2010-05-12 page 1 of 1 information on n-channel mosfet products designed for automotive applications products affected: salesname package ipb60r099cpa pg-to263-3-2 IPB60R199CPA pg-to263-3-2 ipb60r299cpa pg-to263-3-2 ipc60r075cpa bare die ipi60r099cpa pg-to262-3-1 ipp60r099cpa pg-to220-3-1 ipw60r045cpa pg-to247-3-41 ipw60r075cpa pg-to247-3-41 ipw60r099cpa pg-to247-3-41 dear customer, the devices listed for this notification are sensitive to hard commutation of the conducting body diode. this operating condition can occur in half- bridge configurations used in zvs phase shift and resonant switching pwm converters. using the device under such conditions may re sult in violation of the datasheet specification limits and may lead to permanent damage of the device. please take care that in the context of the applicati on described above the datasheet limits are not exceeded. best regards michael paulu if you have any questions, please do not hesitat e to contact your local sales office.

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