dpg 30 c 400 pb ns hiperfred2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 1 90 i a v f 1.39 r 1.70 k/w v r = 1 2 3 min. 15 t = 10 ms applications: v rrm v 400 1 t vj v c = t vj c =m a 0.18 package: part number v r = t vj =c i f =a v t c = 140c d = p tot 90 w t c c = t vj 175 c -55 v i rrm = = 400 15 15 t vj = 45c dpg 30 c 400 pb v a 400 v 400 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.63 t vj c =25 c j j unction capacitance v = v; t 150 v f0 v 0.84 t vj = 175c r f 16.5 f = 1 mhz = c 25 m ? v 1.14 t vj =c i f =a v 15 1.40 i f =a 30 i f =a 30 2x threshold voltage slope resistance for power loss calculation only backside: cathode 4a t vj =c reverse recovery time a 5.5 45 70 ns (50 hz), sine t rr = 45 ns housing: high performance fast recovery diode low loss and soft recovery common cathode to-220 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 15 25 t= 125c vj -di f =a/s 200 /dt t rr v r =v 270 t vj =c 25 t= 125c vj a 16 200 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 150 ixys reserves the right to change limits, conditions and dimensions. ? 20100127a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 30 c 400 pb i rms a per pin 35 r thch k/w 0.50 m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 60 mounting force with clip 20 ordering delivering mode base qty code key standard part name dpg 30 c 400 pb 507157 tube 50 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking d p g 30 c 400 pb part number diode hiperfred extreme fast common cathode to-220ab (3) = = = dpg30c400hb to-247ad (3) similar part package 1) 1 ) marking on product DPG30C400PB 400 voltage class current rating [a] reverse voltage [v] = = = = rms ixys reserves the right to change limits, conditions and dimensions. ? 20100127a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 30 c 400 pb dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 g c d f b h a j k l q r e n m outlines to-220 ixys reserves the right to change limits, conditions and dimensions. ? 20100127a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 30 c 400 pb 0 100 200 300 400 500 600 20 40 60 80 100 120 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj [c] 0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 400 450 v fr v] 0 100 200 300 400 500 600 0 2 4 6 8 10 12 0 100 200 300 400 500 600 0.0 0.1 0.2 0.3 0.4 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 70 80 i rm [a] q rr [c] i f [a] v f [v] -di f /dt [a/s] t rr [ns] v fr t fr i rm q rr 30 a 15 a -di f /dt [a/s] -di f /dt [a/s] 7.5 a 15 a i f =30 a -di f /dt [a/s] 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 2.0 t [ms] z thjc [k/w] 0 100 200 300 400 500 600 0 5 10 15 20 25 e rec [j] -di f /dt [a/s] i f = 30 a i f = 15 a i f = 7.5 a i f =30 a i f =15 a i f =7.5a fig. 1 forward current i f vs. v f fig. 2 typ. reverse recovery charge q rr versus -di f /dt fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 4 dynamic parameters q rr , i rm versus t vj fig. 5 typ. recovery time t rr vs. -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt fig. 7 typ. recovery energy e rec versus -di f /dt t fr [ns] t vj = 25c 150c fig. 8 transient thermal resistance junction to case 7.5 a t vj = 125c v r = 270 v t vj = 125c v r =270 v t vj = 125c v r = 270 v t vj =125c i f =15 a v r =270 v t vj =125c v r = 270 v ixys reserves the right to change limits, conditions and dimensions. ? 20100127a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
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