zxmp4a57e6 document number ds35238 rev. 1 - 2 1 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated zxmp4a57e6 advance information 40v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max t a = 25 c -40v 80m @ v gs = -10v -3.7 a 150m @ v gs = -4.5v -2.8 a description and applications this mosfet has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? motor control ? dc-dc converters ? power management functions ? uninterrupted power supply features and benefits ? fast switching speed ? low gate drive ? low input capacitance ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot26 ? case material: molded plastic, ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight 0.018 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel ZXMP4A57E6TA 4a57 7 8 3,000 notes: 1. no purposefully added lead 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information top view pin-out equivalent circuit d s g d d g d d s top view sot26 4a57 = product type marking code 4a57
zxmp4a57e6 document number ds35238 rev. 1 - 2 2 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated zxmp4a57e6 advance information maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -40 v gate-source voltage v gs 20 v continuous drain current v gs = 10v (note 5) i d -3.7 a t a = 70c (note 5) -2.9 (note 4) -2.9 pulsed drain current v gs = 10v (note 6) i dm -18 a continuous source current (body diode) (note 5) i s -2.6 a pulsed source current (body diode) (note 6) i sm -18 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation linear derating factor (note 4) p d 1.1 8.8 w mw/ c (note 5) 1.7 13.7 thermal resistance, junction to ambient (note 4) r ja 113 c/w (note 5) 73 operating and storage temperature range t j , t stg -55 to 150 c notes: 4. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 5. same as note (4), except the device is measured at t 5 sec. 6. same as note (4), except the device is pulsed with d = 0.02 and pulse width 300s. the pulse current is limited by the maxi mum junction temperature.
zxmp4a57e6 document number ds35238 rev. 1 - 2 3 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated zxmp4a57e6 advance information thermal characteristics 11 0 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 100us 100ms 1s r ds(on) limited 1ms p-channel safe operating area single pulse, t amb =25c dc 10ms -i d drain current (a) -v ds drain-source voltage (v) derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb =25c pulse power dissipation maximum power (w) pulse width (s)
zxmp4a57e6 document number ds35238 rev. 1 - 2 4 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated zxmp4a57e6 advance information electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -40 ? ? v i d = -250 a, v gs = 0v zero gate voltage drain current i dss ? ? -0.5 a v ds = -40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) -1.0 ? -3.0 v i d = -250 a, v ds = v gs static drain-source on-resistance (note 7) r ds(on) ? ? 0.080 ? v gs = -10v, i d = -4a ? ? 0.150 v gs = -4.5v, i d = -2a forward transconductance (notes 7 & 8) g fs ? 7.6 ? s v ds = -15v, i d = -4a diode forward voltage (note 7) v sd ? -0.86 -0.95 v i s = -4a, v gs = 0v reverse recovery time (note 8) t r r ? 17.4 ? ns i s = -1.8a, di/dt = 100a/ s reverse recovery charge (note 8) q r r ? 11.1 ? nc dynamic characteristics (note 8) input capacitance c iss ? 833 ? pf v ds = -20v, v gs = 0v f = 1mhz output capacitance c oss ? 122 ? reverse transfer capacitance c rss ? 78 ? total gate charge (note 9) q g ? 7 ? nc v gs = -4.5v v ds = -20v i d = -4a total gate charge (note 9) q g ? 15.8 ? v gs = -10v gate-source charge (note 9) q g s ? 3.6 ? gate-drain charge (note 9) q g d ? 2.7 ? turn-on delay time (note 9) t d ( on ) ? 2.5 ? ns v dd = -20v, v gs = -10v i d = -1a, r g ? 6.0 turn-on rise time (note 9) t r ? 3.3 ? turn-off delay time (note 9) t d ( off ) ? 47 ? turn-off fall time (note 9) t f ? 21 ? notes: 7. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 8. for design aid only, not subject to production testing. 9. switching characteristics are independent of operating junction temperatures.
zxmp4a57e6 document number ds35238 rev. 1 - 2 5 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated zxmp4a57e6 advance information typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 234 0.1 1 10 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1e-4 1e-3 0.01 0.1 1 10 10v 4.5v 3.5v -v gs 2.5v 4v 3v output characteristics t = 25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 5v 4v 3.5v 3v 2v 4.5v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) 5v typical transfer characteristics v ds = -10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = -10v i d = - 4a v gs(th) v gs = v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 7v v gs = 0v 4v 10v 3v 4.5v 3.5v 2.5v on-resistance v drain current t = 25c -v gs r ds(on) drain-source on-resistance () -i d drain current (a) 5v t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a)
zxmp4a57e6 document number ds35238 rev. 1 - 2 6 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated zxmp4a57e6 advance information typical characteristics - continued 0.1 1 10 0 200 400 600 800 1000 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 i d = -4a v ds = -20v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits c urrent regulator charge gate charge test circuit switching time test circuit basicgatechargewaveform switching time waveforms d.u.t 50k 0.2 f 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(of ) v ds v dd r d r g pulse width 1 s duty factor 0.1% v ds i d i g
zxmp4a57e6 document number ds35238 rev. 1 - 2 7 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated zxmp4a57e6 advance information package outline dimensions suggested pad layout sot-26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d ? ? 0.95 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 ? all dimensions in mm dimensions value (in mm) z 3.20 g 1.60 x 0.55 y 0.80 c1 2.40 c2 0.95 a m j l d b c h k x z y c1 c2 c2 g
zxmp4a57e6 document number ds35238 rev. 1 - 2 8 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated zxmp4a57e6 advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes inco rporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability what soever in respect of any pr oducts purchased through unauthoriz ed sales channel. should customers purchase or use diodes in corporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless agains t all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prop erly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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