inchange semiconductor isc product specification isc silicon npn power transistor BUT54 description high voltage high speed switching high power dissipation applications designed for switching mode power supply and electronic ballast applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v ces collector-emitter voltage 800 v v cer collector-emitter voltage r be 100 800 v v ceo collector-emitter voltage 430 v v ebo emitter-base voltage 6 v i c collector current-continuous 8 a i cm collector current-peak 10 a i bm base current-peak 4 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUT54 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.1a; i b = 0, l= 125mh 430 v v (br)cer collector-emitter breakdown voltage i c = 0.5ma; i b = 0, r b be 100 800 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 6 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 0.8a b 5.0 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 0.8a b 2.0 v i ces collector cutoff current v ce = 800v; v be = 0 v ce = 800v; v be = 0; t c =150 1.0 2.0 ma h fe-1 dc current gain i c = 1a; v ce = 5v 20 45 h fe-2 dc current gain i c = 4a; v ce = 5v 5.5 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 10 mhz switching times ;resistive load t off turn-off time 4.0 s t f fall time i c =4a; i b1 =-i b2 =1.25a; t p =20 s 1.0 s isc website www.iscsemi.cn
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