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?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com 2N5551- mmbt5551 rev. b 2N5551- mmbt5551 npn ge neral purpose amplifier tm april 2006 2N5551- mmbt5551 npn general purpose amplifier features ? this device is designed for general purpose high volt age amplifiers and gas discharge display drivers. ? suffix ?-c? means center collector in 2N5551 (1. emitter 2. collector 3. base) ? suffix ?-y? means h fe 180~240 in 2N5551 ( test condition : i c = 10ma, v ce = 5.0v ) absolute maximum ratings * t a = 25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1. these ratings are based on a maximum junction temperature of 150 degrees c. 2. these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations . thermal characteristics t a =25 c unless otherwise noted * device mounted on fr-4 pcb 1.6" 1.6" 0.06." symbol parameter value units v ceo collector-emitter voltage 160 v v cbo collector-base voltage 180 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 600 ma t j , t stg junction and storage temperature -55 ~ +150 c symbol parameter max units 2N5551 *mmbt5551 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r ja thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 c/w 1. base 2. emitter 3. collector sot-23 1 2 3 marking: 3s 2N5551 mmbt5551 to-92
2 www.fairchildsemi.com 2N5551- mmbt5551 rev. b 2N5551- mmbt5551 npn ge neral purpose amplifier electrical characteristics t a = 25c unless otherwise noted spice model npn (is=2.511f xti=3 eg=1.11 vaf=100 bf=242.6 ne=1.249 ise=2.511f ikf=.3458 xtb=1.5 br=3.197 nc=2 isc=0 ikr=0 rc=1 cjc=4.883p mjc=.3047 vjc=.75 fc=.5 cje=18.79p mje=.3416 vje=.75 tr=1.202n tf=560p itf=50m vtf=5 xtf=8 rb=10) symbol parameter test condition min. max. units off characteristics v (br)ceo collector-emitter breakdown voltage * i c = 1.0ma, i b = 0 160 v v (br)cbo collector-base breakdown voltage i c = 100 a, i e = 0 180 v v (br)ebo emitter-base breakdown voltage i e = 10ua, i c = 0 6.0 v i cbo collector cutoff current v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c 50 50 na a i ebo emitter cutoff current v eb = 4.0v, i c = 0 50 na on characteristics h fe dc current gain i c = 1.0ma, v ce = 5.0v i c = 10ma, v ce = 5.0v i c = 50ma, v ce = 5.0v 80 80 30 250 v ce (sat) collector-emitter saturation voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 0.15 0.20 v v v be (sat) base-emitter on voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 1.0 1.0 v v small signal characteristics f t current gain bandwidth product i c = 10ma, v ce = 10v, f = 100mhz 100 300 mhz c obo output capacitance v cb = 10v, i e = 0, f = 1.0mhz 6.0 pf c ibo input capacitance v be = 0.5v, i c = 0, f = 1.0mhz 20 pf h fe small-signal current gain i c = 1.0 ma, v ce = 10 v, f = 1.0khz 50 250 nf noise figure i c = 250 ua, v ce = 5.0 v, r s =1.0 k ? , f=10 hz to 15.7 khz 8.0 db
3 www.fairchildsemi.com 2N5551- mmbt5551 rev. b 2N5551- mmbt5551 npn ge neral purpose amplifier typical performance characteristics figure 1. typical pulsed current gain vs collector current figure 2. collector-emitter saturation voltage vs collector current figure 3. base-emitter saturation voltage vs collector current figure 4. base-emitter on voltage vs collector current figure 5. collec tor cutoff current vs ambient temperature figure 6. input and output capacitance vs reverse voltage 0.1 1 10 100 0 50 100 150 200 250 50 20 5 2 0.5 0.2 -40 o c 25 o c 125 o c v ce = 5v h fe - typical pulsed current gain i c - collector current (ma) 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 - 40 o c 25 o c 125 o c = 10 v cesat - collector emitter voltage (v) i c - collector current (ma) 110100 0.0 0.2 0.4 0.6 0.8 1.0 200 125 o c 25 o c - 40 o c = 10 v besat - base emitter voltage (v) i c - collector current (ma) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 - 40 o c 25 o c 125 o c v ce = 5v v beon - base emitter on voltage (v) i c - collector current (ma) 25 50 75 100 12 5 1 10 50 t - ambie nt temp erature ( c) i - colle ctor current (na) a cbo v = 10 0v cb 0.1 1 10 100 0 5 10 15 20 25 30 v - collector voltage (v) capacitance (pf) c f = 1.0 mhz ce c cb ib
4 www.fairchildsemi.com 2N5551- mmbt5551 rev. b 2N5551- mmbt5551 npn ge neral purpose amplifier typical performance characteristics (continued) figure 7. collector- emitter breakdown voltage with resistance between emitter-base figure 8. small signal current gain vs collector current figure 9. power dissipation vs ambient temperature between emitter-base 0.1 1 10 100 1000 160 180 200 220 240 260 resistance (k ) bv - breakdown voltage (v) ? cer i = 1.0 ma c vs collector current 11050 0 4 8 12 16 i - collector current (ma) h - small signal current gain c fe freg = 20 mhz v = 10v ce 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation (mw) d o to-92 sot-23
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 2N5551- mmbt5551 npn ge neral purpose amplifier disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not ex- pand the terms of fairchild?s worldwide terms a nd conditions specifically the warranty therein, which covers these products. life support policy fairchild?s products are not author ized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any co mponent of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the desi gn specifications for product development. specifications ma y change in any manner with- out notice. preliminary first production this datasheet c ontains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specific ations. fairchild semi- conductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contai ns specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? rev. i19 5 www.fairchildsemi.com 2N5551- mmbt5551 rev. b

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Price & Availability of 2N5551

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551TA 31Y5847	onsemi	Trans, Npn, 160V, 0.6A, 150Deg C, 0.625W; Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:600Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes \|Onsemi 2N5551TA	1000: USD0.077 500: USD0.088 250: USD0.098 100: USD0.11 50: USD0.157 25: USD0.204 10: USD0.251 1: USD0.35	12637
2N5551TA 83C3404	onsemi	Transistor, bjt, npn,160V V(Br)Ceo,600Ma I(C),to-92 Rohs Compliant: Yes \|Onsemi 2N5551TA	2000: USD0.075	6000
2N5551BU 83C3397	onsemi	Bipolar (Bjt) Single Transistor, General Purpose, Npn, 160 V, 150 Mhz, 625 Mw, 600 Ma, 80 Rohs Compliant: Yes \|Onsemi 2N5551BU	10000: USD0.039 2500: USD0.048 1000: USD0.054 500: USD0.077 100: USD0.092 10: USD0.184 1: USD0.264	2779
2N5551 98K6258	onsemi	Transistor, Bipolar, Npn, 160V, 600Ma, To-92-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:600Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins Rohs Compliant: Yes \|Onsemi 2N5551	30000: USD0.036 10000: USD0.043 2500: USD0.045 1000: USD0.052 500: USD0.066 100: USD0.088 10: USD0.153 1: USD0.218	1144
2N5551 35C0727	SPC Multicomp	Bipolar Transistor, Npn, 160V To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:600Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes \|Multicomp Pro 2N5551	5000: USD0.1 2000: USD0.1 1000: USD0.108 500: USD0.117 200: USD0.128 100: USD0.128 10: USD0.128 1: USD0.128	861

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551YBU 2N5551YBU-ND	onsemi	TRANS NPN 160V 0.6A TO92-3	50000: USD0.0406 10000: USD0.04602 5000: USD0.05549 2000: USD0.05982 1000: USD0.06902 500: USD0.09934 100: USD0.1191 10: USD0.244 1: USD0.36	19853
2N5551 4878-2N5551CT-ND	Diotec Semiconductor AG	BJT TO92 160V 600MA NPN 0.625W	200000: USD0.01531 100000: USD0.01727 28000: USD0.02073 12000: USD0.02303 8000: USD0.02648 4000: USD0.02936 1000: USD0.03454 500: USD0.05066 250: USD0.06104 100: USD0.0823 25: USD0.144 10: USD0.151 1: USD0.17	5892
2N5551 2383-2N5551-ND	Solid State Inc	NPN SIL TO92(92) HV	100: USD0.15	4900
2N5551 4491-2N5551-ND	Lumimax Optoelectronic Technology	TRANS NPN EBC 0.6A 160V TO-92	3000: USD0.068 2000: USD0.086 1000: USD0.125 500: USD0.15 200: USD0.17 100: USD0.198 50: USD0.24 25: USD0.28	2960
2N5551 2368-2N5551-ND	NTE Electronics Inc	TRANS NPN 160V 0.2A TO92	250: USD0.157 200: USD0.161 150: USD0.171 100: USD0.18 50: USD0.19	2084

Part #	Manufacturer	Description	Price	BuyNow Qty.
DATAPACK/JANS2N5551UBG DATAPACK/JANS2N555	STMicroelectronics	DATAPACK/JANS2N5551UBG - Bulk (Alt: DATAPACK/JANS2N555)	1: USD294.8385	1
2N5551TFR 2N5551TFR	onsemi	Transistor GP BJT NPN 160V 0.6A 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N5551TFR)		0
2N5551 2N5551	Central Semiconductor Corp	Transistor GP BJT NPN 160V 0.6A 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N5551)		0
2N5551 TRA TIN/LEAD 2N5551 TRA TIN/LEA	Central Semiconductor Corp	Transistor GP BJT NPN 160V 600nA 3-Pin Through Hole TO-92 T/R - Tape and Reel (Alt: 2N5551 TRA TIN/LEA)	200000: USD0.39468 20000: USD0.40075 16000: USD0.40682 12000: USD0.4129 8000: USD0.422 4000: USD0.43111 2000: USD0.44065	0
2N5551 TRE TIN/LEAD 2N5551 TRE TIN/LEA	Central Semiconductor Corp	Transistor GP BJT NPN 160V 0.6A 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N5551 TRE TIN/LEA)	200000: USD0.39468 20000: USD0.40075 16000: USD0.40682 12000: USD0.4129 8000: USD0.422 4000: USD0.43111 2000: USD0.44065	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551 637-2N5551	Diotec Semiconductor AG	Bipolar Transistors - BJT BJT, TO-92, 160V, 600mA, NPN	1: USD0.15 10: USD0.112 100: USD0.092 500: USD0.075 1000: USD0.05 4000: USD0.029 8000: USD0.027 24000: USD0.023	13019
2N5551-T 583-2N5551-T	Rectron Semiconductor	Bipolar Transistors - BJT NPN 0.6A 160V	1: USD0.36 10: USD0.267 100: USD0.151 1000: USD0.077 2000: USD0.066 10000: USD0.053 24000: USD0.049 50000: USD0.048	8237
2N5551 583-2N5551	Rectron Semiconductor	Bipolar Transistors - BJT TO-92 NPN 0.6A 160V HighVol	10000: USD0.053 20000: USD0.049 50000: USD0.048	0
2N5551 PBFREE 610-2N5551	Central Semiconductor Corp	Bipolar Transistors - BJT NPN Gen Pur SS	1: USD0.88 10: USD0.72 100: USD0.56 500: USD0.475 1000: USD0.43 2500: USD0.365 10000: USD0.363	1193
2N5551TA 512-2N5551TA	onsemi	Bipolar Transistors - BJT NPN Transistor General Purpose	1: USD0.35 10: USD0.24 100: USD0.099 1000: USD0.067 2000: USD0.053 10000: USD0.045 24000: USD0.043 50000: USD0.04 100000: USD0.039	21018

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551TF E02:0323_00843072	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R	2000: USD0.0327	18000
2N5551TFR P40:2555_12572552	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R	30000: USD0.0303 18000: USD0.0305 16000: USD0.031	18000
2N5551TFR V72:2272_06298012	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R	15000: USD0.0366 6000: USD0.0417 3000: USD0.0469 1000: USD0.052 500: USD0.0572 250: USD0.0578 100: USD0.0584 25: USD0.144 10: USD0.1456 1: USD0.2232	17146
2N5551TF V72:2272_06298009	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R	6000: USD0.0342 3000: USD0.0388 1000: USD0.0433 500: USD0.0479 250: USD0.0486 100: USD0.0491 25: USD0.1205 10: USD0.1217 1: USD0.1785	12253
2N5551TFR V36:1790_06298012	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R	30000: USD0.0325 18000: USD0.0328 12000: USD0.0332 6000: USD0.0335 2000: USD0.0362	12000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	Rectron Semiconductor		30000: USD0.0346 25000: USD0.0423 10000: USD0.0445 5000: USD0.0469 1000: USD0.0532 500: USD0.0686 100: USD0.0955 1: USD0.1007	0
2N5551	Taitron Components Inc	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	8000: USD0.0171 4000: USD0.018 2000: USD0.0189 1000: USD0.0199 1: USD0.0219	76
2N5551	onsemi	Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk	5000: USD0.28 2500: USD0.31 1000: USD0.36 500: USD0.424 250: USD0.616 100: USD1.63 60: USD2.2	12693
2N5551	Semiconductors		100: USD0.644 50: USD1.28 25: USD1.5 1: USD2.19	96
2N5551	Diotec Semiconductor AG	Bipolar Transistor - TO-92 - 160V - 600mA - NPN	500000: USD0.0134 252000: USD0.0136 152000: USD0.0138 100000: USD0.014 52000: USD0.0144 28000: USD0.0156 12000: USD0.0164 4000: USD0.0211	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551 78440212	Diotec Semiconductor AG	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Ammo	4000: USD0.0242 2700: USD0.0312	20750
2N5551TF 69839374	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R	2000: USD0.0326	18000
2N5551BU 78824024	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Bag	10000: USD0.033 2500: USD0.0353 1000: USD0.0383 159: USD0.0639	15520
2N5551TF 62461451	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R	6000: USD0.0342	12253
2N5551BU 79015937	onsemi	Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Bag	10000: USD0.0331 2500: USD0.0376 1000: USD0.0409 182: USD0.0682	9950

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	Motorola Semiconductor Products			40
2N5551	Philips Semiconductors			1700
2N5551	National Semiconductor Corporation		45: USD0.1125	70
2N5551YTA	Fairchild Semiconductor Corporation			18000
2N5551G	onsemi			1088

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	Motorola Semiconductor Products	Bipolar Junction Transistor, NPN Type, TO-92	12606: USD0.0204 2452: USD0.0238 1: USD0.051	16649
2N5551	NXP Semiconductors	Bipolar Junction Transistor, NPN Type, TO-92	2452: USD0.0238 1030: USD0.0306 1: USD0.051	6840
2N5551	YAGEO Corporation	Bipolar Junction Transistor, NPN Type, TO-92	1030: USD0.0306 354: USD0.034 1: USD0.051	2300
2N5551		Bipolar Junction Transistor, NPN Type, TO-92	1030: USD0.0306 354: USD0.034 1: USD0.051	1086
2N5551	Carsem (M) Sdn Bhd	Bipolar Junction Transistor, NPN Type, TO-92	354: USD0.034 99: USD0.0425 1: USD0.051	904

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551TA	Fairchild Semiconductor Corporation	2N5551 - Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92	1000: USD0.0331 500: USD0.035 100: USD0.0366 25: USD0.0381 1: USD0.0389	2085
2N5551BU	onsemi	2N5551 - Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92	1000: USD0.0335 500: USD0.0355 100: USD0.037 25: USD0.0386 1: USD0.0394	39904
2N5551RL1G	onsemi	2N5551 - Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92 '	1000: USD0.0677 500: USD0.0716 100: USD0.0748 25: USD0.078 1: USD0.0796	105347
2N5551TA	onsemi	2N5551 - Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92	1000: USD0.0331 500: USD0.035 100: USD0.0366 25: USD0.0381 1: USD0.0389	3139
2N5551ZL1G	onsemi	2N5551 - Small Signal Bipolar Transistor, 0.6A, 160V, NPN, TO-92 '	1000: USD0.0677 500: USD0.0716 100: USD0.0748 25: USD0.078 1: USD0.0796	31679

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551 2N5551-CDI	Continental Device India Ltd	Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92	5000: USD0.0182 1000: USD0.0195 250: USD0.0217 100: USD0.0246 25: USD0.0299	0
2N5551 2N5551-DIO	Diotec Semiconductor AG	Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92	12000: USD0.0158 4000: USD0.0169 500: USD0.0221 100: USD0.028 25: USD0.0408	20750
2N5551 2N5551-LGE	Luguang Electronic Technology Co Ltd	Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92	12000: USD0.0147 3000: USD0.0158 1000: USD0.0175 250: USD0.0198 100: USD0.0221 25: USD0.032	0
2N5551TA 2N5551TA	onsemi	Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92	30000: USD0.0452 6000: USD0.0467 4000: USD0.0496 2000: USD0.0559 1000: USD0.0642 500: USD0.0752 100: USD0.1165 10: USD0.2278 1: USD0.3317	1921
2N5551TF 2N5551TF	onsemi	Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92	10000: USD0.048 2000: USD0.0515 500: USD0.0573 100: USD0.0648 20: USD0.0858	280

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551S-RTK/P	KEC			27000
2N5551RLRAG	onsemi	2N5551RLRAG , NPN 双极晶体管, 600 mA, Vce=160 V, HFE:30, 100(测试)MHz, 3针 TO-92封装		2000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551RLRAG	onsemi	NPN SILICON AMPLIFIER TRANSISTOR Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92		34000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	Motorola Mobility LLC			38

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551		INSTOCK		40
2N5551RL1	onsemi	INSTOCK		2000
2N5551RL1	GSEMI	INSTOCK		4000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551TA 2N5551TA	onsemi	Transistor GP BJT NPN 160V 0.6A 3-Pin TO-92 Ammo (Alt: 2N5551TA)		18000
2N5551TFR 2N5551TFR	onsemi	Transistor GP BJT NPN 160V 0.6A 3-Pin TO-92 T/R (Alt: 2N5551TFR)		4000
2N5551BU 2N5551BU	onsemi	Transistor GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk (Alt: 2N5551BU)		0
JANS2N5551UBT JANS2N5551UBT	STMicroelectronics	(Alt: JANS2N5551UBT)		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551BU C1S226600657204	onsemi	Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk	200: USD0.0579 100: USD0.0613 50: USD0.132 25: USD0.151	479

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	CEN	IN STOCK SHIP TODAY	1000: USD0.15 100: USD0.17 1: USD0.23	200
2N5551	Motorola Semiconductor Products	IN STOCK SHIP TODAY	1000: USD0.15 100: USD0.17 1: USD0.23	209
2N5551	Philips Semiconductors	IN STOCK SHIP TODAY	1000: USD0.15 100: USD0.17 1: USD0.23	19290
2N5551	Fairchild Semiconductor Corporation	IN STOCK SHIP TODAY	1000: USD0.15 100: USD0.17 1: USD0.23	4
2N5551	UNKNOWN	IN STOCK SHIP TODAY	1000: USD0.15 100: USD0.17 1: USD0.23	40

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	National Semiconductor Corporation	NSC 2N5551 BARE DIE		645
2N5551	Central Semiconductor Corp	CS 2N5551 BARE DIE		85
2N5551	Texas Instruments	TI 2N5551 UNINSPECTED BARE DIE		1590

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551TFR	onsemi	Stock, ship today	1: USD0.02	1864
2N5551BU	onsemi	Stock		80000
2N5551TF	onsemi	Stock		30000
2N5551YBU	onsemi	Stock		10000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	Taitron Components Inc	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	8000: USD0.0171 4000: USD0.018 2000: USD0.0189 1000: USD0.0199 1: USD0.0219	76
2N5551	Diotec Semiconductor AG	Bipolar Transistor - TO-92 - 160V - 600mA - NPN	500000: USD0.0134 252000: USD0.0136 152000: USD0.0138 100000: USD0.014 52000: USD0.0144 28000: USD0.0156 12000: USD0.0164 4000: USD0.0211	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551TA	onsemi	TO92-3/NPN General-Purpose Amplifier	4000: USD0.0567 14000: USD0.0525	14000
2N5551TFR	onsemi	2N5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92	4000: USD0.0429 14000: USD0.04	14000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	MFG UPON REQUEST			14208
2N5551	Unisonic Technologies Co Ltd			1392
2N5551	Fairchild Semiconductor Corporation			6104
2N5551	NXP Semiconductors			1935
2N5551	National Semiconductor Corporation			53796

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N5551	Central Semiconductor Corp	2N5551		0
2N5551G	onsemi	2N5551G		0
2N5551RL1G	onsemi	2N5551RL1G		0
2N5551ZL1G	onsemi	2N5551ZL1G		0
2N5551TF	onsemi	2N5551TF		0

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