specification comparison vishay siliconix documen t nu mber 74064 w w w . vishay.com 06-m a y-05 si7892b dp vs. si7892dp description : n-channel, 30-v (d-s) mos f et package: powerpak ? so-8 pin out: identical part number replacements: si78 92bd p -t1 - e3 re pla c e s si78 92d p-t 1 - e 3 si78 92bd p -t1 - e3 re pla c e s si78 92d p-t 1 summary of performance: th e si7 8 9 2 b dp is th e replac emen t to th e o r igin al si78 92 dp; both parts p e rform identically, includ ing limits to the parametric tables below. absolute max i m u m ratings ( t a = 2 5 o c unle ss o t he rwise no te d) p a r a m e t e r s y m b o l si789 2 b d p si789 2 d p u n i t drain-sourc e volt a g e v ds 3 0 3 0 g a t e - s ou r c e vo l t ag e v gs + 2 0 + 20 v t a = 2 5 c 2 5 2 5 continuous drai n c u rrent t a = 7 0 c i d 2 0 2 0 p u l s e d dr ai n cu r r en t i dm 6 0 6 0 continuous so urce curren t (mosfet diode c o nduction) i s 4 . 1 4 . 5 av alanc h e c u rrent l = 0. 1 m h i as 4 0 5 0 a t a = 2 5 c 5 5 . 4 p o w e r dissipa t i on t a = 7 0 c p d 3 . 2 3 . 4 w operati n g junct i on & stor age te mper ature rang e t j & t stg -55 to 1 50 -55 to 1 50 c maxi mu m junct i on -to - ambi ent r thja 2 5 2 3 c/w spe c ifica t io ns ( t j = 2 5 o c unl e ss o t he rwise no te d) si7892 b d p s i 7 8 9 2 d p p a ra me te r s y mb ol m i n t y p m a x m i n t y p m a x unit static gate -thr es hold v o l t age v gs(th) 1 . 0 3 . 0 1 . 0 3 . 0 v gate -body l e a k ag e i gss + 1 0 0 + 1 0 0 n a z e ro g a te v o ltag e drain c u rr ent i dss 1 1 a on- s tat e dr ain c u r r ent v gs = 1 0 v i d(on) 3 0 3 0 a v gs = 1 0 v 0 . 0 0 3 4 0 . 0 0 4 2 0 . 0 0 3 7 0 . 0 0 4 5 drain- sourc e on-r es is tance v gs = 4. 5 v r ds( o n) 0 . 0 0 4 7 0 . 0 0 5 7 0 . 0 0 4 8 0 . 0 0 6 ? forward trans c o n ductan ce g fs 8 5 8 0 s diode for ward v o l t age v sd 0 . 7 5 1 . 2 0 . 7 5 1 . 2 v dynamic input c a paci tan ce c iss 3775 n s output c a paci tanc e c oss 630 n s rev e rs e tr ans f e r c a pacit a nce c rss 295 n s pf total gat e ch arge qg 27 40 25 35 gate -so u rce char g e qgs 11.4 6.7 gate -dra in cha r ge qgd 8.1 9.7 nc g a t e re sist anc e rg 0. 5 1 . 2 2 . 0 0 . 5 n s 2 . 4 ? swit chin g t d( on ) 20 3 0 1 7 3 0 turn- o n ti me* t r 1 3 2 0 1 0 2 0 t d ( off) 6 2 1 0 0 6 5 1 3 0 turn- o ff ti me* t f 2 0 3 5 3 5 6 0 source -dra in r e v e rs e re cov e ry ti me t rr 40 6 0 5 0 8 0 ns
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