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| Datasheet File OCR Text: |
| process CPS165 silicon controlled rectifier 35 amp sensitive gate scr chip princip al device types cs220-35m series process glass passivated mesa die size 165 x 165 mils die thickness 8.7 mils cathode bonding pad area 131 x 91 mils gate bonding pad area 31 x 31 mils top side metalization al - 45,000? back side metalization al/mo/ni/ag - 32,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry r0 (4- january 2006) gross dier per 4 inch w afer 376
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