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programmable single-/dual-/triple- tone gong pb-free lead plating; rohs compliant bipolar ic features l supply voltage range 2.8 v to 18 v l few external components (no electrolytic capacitor) l 1 tone, 2 tones, 3 tones programmable l loudness control l typical standby current 1 m a l constant current output stage (no oscillation) l high-efficiency power stage l short-circuit protection l thermal shutdown semiconductor group102.05 t new type functional description the sae 800 is a single-tone, dual-tone or triple-tone gong ic designed for a very wide supply voltage range. if the oscillator is set to f 0 = 13.2 khz for example, the ic will issue in triple-tone- mode the minor and major third e 2 C c sharp C a, corresponding to 660 hz C 550 hz C 440 hz, in dual-tone-mode the minor third e 2 C c sharp, and in single-tone-mode the tone e 2 (derived from the fundamental frequency f 0 ; f 1 = f 0 / 20, f 2 = f 0 / 24, f 3 = f 0 / 30). when it is not triggered, the ic is in a standby state and only draws a few m a. it comes in a compact p-dip-8-1 or p-dso-8-1 (smd) package and only requires a few external components. pg-dip-8-4 pg-dso-8-1 sae 800 type ordering code package t sae 800q67000-a8339pg-dip-8-4 t sae 800 g q67000-a8340 pg-dso-8-1 (smd)
semiconductor group 2 sae 800 pin configuration (top view) pin definitions and functions functional description (cont?d) an rc combination is needed to generate the fundamental frequency (pin r osc , c osc ). the volume can be adjusted with another resistor (pin l). the loudspeaker must be connected directly between the output q and the power supply v s . the current-sink principle combined with an integrated thermal shutdown (with hysteresis) makes the ic overload-protected and shortcircuit-protected. there are two trigger pins (e1, e2) for setting single-tone, dual-tone or triple-tone mode. pin symbol function 1 gnd ground 2 q output 3 v s supply voltage 4 l loudness control 5 r osc oscillator resistor 6 c osc oscillator capacitor 7 e2 trigger 2 (dual tone) 8 e1 trigger 1 (single tone) sae 800 sae 800 g
semiconductor group 3 block diagram sae 800
semiconductor group 4 circuit description trigger positive pulses on inputs e1 and/or e2 trigger the ic. the hold feedback in the logic has a delay of several milliseconds. after this delay has elapsed, the tone sequence is started. this prevents parasitic spikes from producing any effect on the trigger pins. the following table shows the trigger options: oscillator this is a precision triangle oscillator with an external time constant (r x c). capacitor c c on pin c osc is charged by constant current to 1 v and then discharged to 0.5 v. the constant current is obtained on pin r osc with an external resistor r r to ground. when the voltage on c osc is building up, the logic is reset at 350 mv. this always ensures that a complete tone sequence is issued. if the oscillator pin is short-circuited to gnd during operation, the sequence is repeated. voltages on pin c osc e1 e2 mode issued sequence triggered triggered triple-tone minor and major third grounded/open triggered dual-tone minor third triggered grounded/open single-tone 1st tone of minor third the following applies: d v c x c c = i c x t/2 with i c = v r /2 r r = 1.2 v/2 r r f 0 = 5/8 x 1/( r r x c c ) sae 800
semiconductor group 5 logic the logic unit contains the complete sequence control. the oscillator produces the power-on reset and the clock frequency. single-tone, dual-tone or triple-tone operation is programmed on inputs e1 and e2. the 4-bit digital/analog converters are driven in parallel. in the event of oscillator disturbance, and after the sequence, the dominant stop output is set. by applying current to pin l, the sequence can be shortened by a factor of 30 for test purposes. the following figure shows the envelope of the triple-tone sequence: envelope of the triple-tone sequence envelope of maximum amplitudes of three superimposed tones on q (time scale for f osc = 13.2 khz) ratio of maximum amplitudes m3 : m2 : m1 = 1 : 0.89 : 0.67 sae 800
semiconductor group 6 digital / analog converter, loudness and junction control the dac converts the 4-bit words from the logic into the appropriate staircase currents with the particular tone frequency. the sum current i i drives the following current amplifier. the loudness generator produces the dac reference current i l for all three tones. this requires connecting an external resistor to ground. the chip temperature is monitored by the junction control. at temperatures of more then approx. 170 ?c the stop input will switch the output current i i to zero. the output current is enabled again once the chip has cooled down to approx. 150 ?c. current amplifier the current amplifier with a gain of 1600 boosts the current i i from approx. 470 m a maximum to approx. 750 ma maximum. the output stage consists of an npn transistor with its emitter on power gnd and collector on pin q. the current control insures that the output stage only conducts defined currents. in conjunction with the integrated thermal shutdown, this makes the configuration shortcircuit-protected within wide limits. because of the absence of feedback the circuit is also extremely stable and therefore uncritical in applications. resistor r l on pin l sets the output voltage swing. this assumes that the resistive component of the loudspeaker impedance r q responds similarly as the resistance r l . the output amplitude of the current i i reaches the maximum i i max @ 3 x v l / r l at a time t of 2.33 s (only 3 tone mode), so r l has to be scaled for this point. the following applies: i q = i i max x b = ( v s C v sat ) / r q a 0.8 v s / r q 3 x b x ( v l / r l ) a 0.8 v s / r q the result is: r l = r q x 3 x b x ( v l / 0.8 v s ) with: b = 1600 r l = r q x k x ( v l / 0.8 v s ) with: k = 4800 sae 800
semiconductor group 7 application hints and application circuit 1) loudness resistor (max. load current of 3-tone signal with ensured ratio of amplitudes) 0.8 v s / r q ? ( v l / r l ) x k r l = ( v l / 0.8 v s ) x r q x k; k = 4800 example: r q = 8 w ; v s = 5 v; v l = 1.2 v r l = (1.2 / 4) x 8 w x 4800 ? 12 k w 2) oscillator elements r r , c c f = 5 / 8 x 1 / ( r r x c c ) example: f = 13.2 khz; c c = 4.7 nf r r = 5 / (8 x 13.2 x 4.7) x 10 6 wa 10 k w the following is a typical application circuit application circuit sae 800
semiconductor group 8 absolute maximum ratings parameter symbol limit values unit min. max. supply voltage v s e 0.3 24 v input voltage at e1, e2 v e1, e2 e 5 24 v current at output q current at input pins e1, e2 i q i e1, e2 e 50 e 2 750 3 ma ma current at pin r osc current at pin l current at pin c osc i r i l i c e 300 e 300 e 200 200 200 200 m a m a m a junction temperature t j e 50 150 ?c storage temperature t stg e 50 150 ?c operating range supply voltage v s 2.8 18 v junction temperature t j e 25 125 ?c oscillator frequency at c osc f c 100 khz current at pin r osc current for test mode at pin l current at pin l i r i r i l e 200 90 e 200 e 10 110 e 10 m a m a m a input voltage at e1, e2 v e1, e2 e 4 18 v thermal resistance junction-air (pg-dip-8-4) junction-air (pg-dso-8-1) r th ja r th ja 100 180 k/w k/w sae 800
semiconductor group 9 1) a 13 = 20 x log (m1 / (0.67 x m3)) 2) a 23 = 20 x log (m2 / (0.89 x m3)) characteristics t j = e 25 to 125?c; v s = 2.8 to 18 v parameter symbol limit values unit test condition min. typ. max. supply section standby current quiescent current; pin l open i st i qu 1 5 10 10 m a ma output section peak output power (tone 3) v s = 2.8 v; r q = 4 w ; r l = 8.2 k w v s = 2.8 v; r q = 8 w ; r l = 18 k w v s = 5.0 v; r q = 8 w ; r l = 10 k w v s = 5.0 v; r q = 16 w ; r l = 18 k w v s = 12 v; r q = 50 w ; r l = 33 k w p q p q p q p q p q 250 125 450 225 450 330 165 600 300 600 mw mw mw mw mw a output level differences: tone 1 to 3 tone 2 to 3 a 13 a 23 e 1 e 1 1 1 db db a 1) a 2) biasing section voltage at pin r osc ; r r = 10 k w voltage at pin l; r l = 10 k w v r v l 1.2 1.2 v v oscillator section amplitude frequency r r = 10 k w ; c c = 4.7 nf oscill. drift vs. temperature oscill. drift vs. supply voltage d v c f 0 d t d v e 3 0.5 13.2 1 + 3 v khz 10 -4 /k 10 -3 /k input section triggering voltage at e1, e2 triggering current at e1, e2 noise voltage immunity at e1, e2 triggering delay at f 0 = 13.2 khz v e1 , e2 i e1 , e2 v e1 , e2 t dt 1.6 100 2 0.3 10 v m a v ms sae 800
semiconductor group 10 output peak voltage v q versus loudness-current i l power dissipation p v of output stage versus loudness-current i l max. output power p q versus loudness-current i l peak current i q versus loudness-current i l *) note that i q = f ( i l ) varies between 0 and k i l during tone sequence. thereby the maximum of the power dissipation during the tone sequence is the maximum of p v (in diagram) between i l = 0 and chosen i l = v l / r l . sae 800
semiconductor group 11 output peak voltage v q versus loudness-current i l power dissipation p v of output stage versus loudness-current i l max. output power p q versus loudness-current i l peak current i q versus loudness-current i l *) note that i q = f ( i l ) varies between 0 and k i l during tone sequence. thereby the maximum of the power dissipation during the tone sequence is the maximum of p v (in diagram) between i l = 0 and chosen i l = v l / r l . sae 800
semiconductor group 12 sae 800 circuit for sae 800 application in home chime installation utilizing ac and dc triggering for 1, 2 or 3 tone chime; adjustable volume pcb layout information: because of the peak currents at v s , q and gnd the lines should be designed in a flatspread way or as star pattern.
semiconductor group 13 sae 800 circuit for sae 800 application in home chime installation for operation without battery
semiconductor group 14 sae 800 package outlines smd = surface mounted device dimensions in mm plastic-package, pg-dip-8-4 (plastic dual in-line package) gpd05583 plastic-package, pg-dso-8-1 (smd) (plastic dual small outline) gps05121

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